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Optical chirality is an effective means in screening molecules and their enantiomers in bioengineering, and recently has garnered attention as an implementation of qubits in quantum information processing. The conventional detection of circularly polarized light (CPL) is based on phase retardation and polarization separation using multiple optical components. An intrinsic solid‐state chirality detection device would be favorable for easier integration and implementation. Optical spin injection to the spin‐momentum‐locked topological surface states of topological insulators (TIs) by circularly polarized light leads to a directional DC photocurrent and hence possible circular polarization detection. However, this DC photocurrent is also accompanied by other photo‐responses. Here, a photodetection strategy using a TI transistor which senses CPL without the use of any additional components is demonstrated, it achieves a uniform response over the entire device with a sensitivity ≈5.6%. The Stokes parameters can also be extracted by arithmetic operation of photocurrents obtained with different bias and gate for a complete characterization of a polarized light beam. Therefore, this method enables chirality detection and Stokes parameter analysis using a single device. The proposed miniaturized intrinsic chirality detectors facilitate polarimetry sensing in applications from circular dichroism spectroscopy to biomedical diagnosis.

 

Three-dimensional topological insulators have been demonstrated in recent years, which possess intriguing gapless, spin-polarized Dirac states with linear dispersion only on the surface. The spin polarization of the topological surface states is also locked to its momentum, which allows controlling motion of electrons using optical helicity, i.e., circularly polarized light. The electrical and thermal transport can also be significantly tuned by the helicity-control of surface state electrons. Here, we report studies of photo-thermoelectric effect of the topological surface states in Bi₂Te₂Se thin films with large tunability using varied gate voltages and optical helicity. The Seebeck coefficient can be altered by more than five times compared to the case without spin injection. This deep tuning is originated from the optical helicity-induced photocurrent which is shown to be enhanced, reduced, turned off, and even inverted due to the change of the accessed band structures by electrical gating. The helicity-selected topological surface state thus has a large effect on thermoelectric transport, demonstrating great opportunities for realizing helicity control of optoelectronic and thermal devices.

 

The recently proposed concept of graphene photodetectors offers remarkable properties such as unprecedented compactness, ultrabroadband detection, and an ultrafast response speed. However, owing to the low optical absorption of pristine monolayer graphene, the intrinsically low responsivity of graphene photodetectors significantly hinders the development of practical devices. To address this issue, numerous efforts have thus far been made to enhance the light–graphene interaction using plasmonic structures. These approaches, however, can be significantly advanced by leveraging the other critical aspect of graphene photoresponsivity enhancement—electrical junction control. It has been reported that the dominant photocarrier generation mechanism in graphene is the photothermoelectric (PTE) effect. Thus, the two energy conversion mechanisms involved in the graphene photodetection process are light-to-heat and heat-to-electricity conversions. In this work, we propose a meticulously designed device architecture to simultaneously enhance the two conversion efficiencies. Specifically, a gap plasmon structure is used to absorb a major portion of the incident light to induce localized heating, and a pair of split gates is used to produce a p-n junction in graphene to augment the PTE current generation. The gap plasmon structure and the split gates are designed to share common key components so that the proposed device architecture concurrently realizes both optical and electrical enhancements. We experimentally demonstrate the dominance of the PTE effect in graphene photocurrent generation and observe a 25-fold increase in the generated photocurrent compared to the un-enhanced cases. While further photocurrent enhancement can be achieved by applying a DC bias, the proposed device concept shows vast potential for practical applications.

 

Abstract While the anomalous Hall effect can manifest even without an external magnetic field, time reversal symmetry is nonetheless still broken by the internal magnetization of the sample. Recently, it has been shown that certain materials without an inversion center allow for a nonlinear type of anomalous Hall effect whilst retaining time reversal symmetry. The effect may arise from either Berry curvature or through various asymmetric scattering mechanisms. Here, we report the observation of an extremely large c -axis nonlinear anomalous Hall effect in the non-centrosymmetric T d phase of MoTe 2 and WTe 2 without intrinsic magnetic order. We find that the effect is dominated by skew-scattering at higher temperatures combined with another scattering process active at low temperatures. Application of higher bias yields an extremely large Hall ratio of E ⊥ / E ||  = 2.47 and corresponding anomalous Hall conductivity of order 8 × 10 7  S/m.