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Abstract This work reports a three‐dimensional (3D) radio frequency L−C filter network enabled by a CMOS‐compatible two‐dimensional (2D) fabrication approach, which combines inductive (L) and capacitive (C) self‐rolled‐up membrane (S‐RuM) components monolithically into a single L−C network structure, thereby greatly reducing the on‐chip area footprint. The individual L−C elements are fabricated in‐plane using standard semiconductor processing techniques, and subsequently triggered by the built‐in stress to self‐assemble and roll into cylindrical air‐core architectures. By designing the planar structure geometry and constituent layer properties to achieve a specific number of turns with a desired inner diameter when the device is rolled up, the electrical characteristics can be engineered. The network layouts of the L and C components are also reconfigurable by selecting appropriate input, output, and ground contact routing topographies. The devices demonstrated here operate over the range of ≈1−10 GHz. Their area and volume footprints are ≈0.09 mm²and ≈0.01 mm³, respectively, which are ≈10× smaller than most of the comparable conventional filter designs. These S‐RuM‐enabled 3D microtubular L−C filter networks represent significant advancement for miniaturization and integration of passive electronic components for applications in mobile connectivity and other frequency range. 

Abstract Strain‐induced self‐rolled‐up membranes (S‐RuM) are structures formed spontaneously by releasing a strained layer or layer stacks from its mechanical support, with unique applications in passive photonics, electronics, and bioengineering. Depending on the thermal properties of the strained layers, these structures can experience various thermally induced deformations. These deformations can be avoided and augmented with the addition of strategically placed perforations in the membrane. This study reports on the use of perforations to modify the thermal effects on strained silicon nitride S‐RuM structures. A programmable fuse with well‐defined thermal threshold, ultrasmall footprint, and 2–3 V voltage rating is demonstrated, which can potentially serve as an on‐chip sensing device for power electronic circuits. 

Monolithic strong magnetic induction at the mtesla to tesla level provides essential functionalities to physical, chemical, and medical systems. Current design options are constrained by existing capabilities in three-dimensional (3D) structure construction, current handling, and magnetic material integration. We report here geometric transformation of large-area and relatively thick (~100 to 250 nm) 2D nanomembranes into multiturn 3D air-core microtubes by a vapor-phase self-rolled-up membrane (S-RuM) nanotechnology, combined with postrolling integration of ferrofluid magnetic materials by capillary force. Hundreds of S-RuM power inductors on sapphire are designed and tested, with maximum operating frequency exceeding 500 MHz. An inductance of 1.24 μH at 10 kHz has been achieved for a single microtube inductor, with corresponding areal and volumetric inductance densities of 3 μH/mm 2 and 23 μH/mm 3 , respectively. The simulated intensity of the magnetic induction reaches tens of mtesla in fabricated devices at 10 MHz.