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We present an ultra-compact single-shot spectrometer on silicon platform for sparse spectrum reconstruction. It consists of 32 stratified waveguide filters (SWFs) with diverse transmission spectra for sampling the unknown spectrum of the input signal and a specially designed ultra-compact structure for splitting the incident signal into those 32 filters with low power imbalance. Each SWF has a footprint less than 1 µm × 30 µm, while the 1 × 32 splitter and 32 filters in total occupy an area of about 35 µm × 260 µm, which to the best of our knowledge, is the smallest footprint spectrometer realized on silicon photonic platform. Experimental characteristics of the fabricated spectrometer demonstrate a broad operating bandwidth of 180 nm centered at 1550 nm and narrowband peaks with 0.45 nm Full-Width-Half-Maximum (FWHM) can be clearly resolved. This concept can also be implemented using other material platforms for operation in optical spectral bands of interest for various applications.

 

An ultra‐high resolution Fourier transform spectrometer (FTS) realized in silicon photonic platform that can operate with broad band, narrow band as well as a combination of broad band and narrow band signals is reported. The ultra‐high resolution of the spectrometer is achieved by exploiting multiple techniques: a Michelson interferometer (MI) structure to increase the optical path delay (OPD), a hybrid waveguide design to reduce insertion loss, an optimized heater and air trenches to achieve higher thermal efficiency. Moreover, to further increase the OPD of the spectrometer to increase its resolution, a novel multiple interferometers approach is employed which combines balanced MI withNstatically imbalanced MIs, thereby increasing the OPD of a single MI by factor ofN+ 1. An FTS spectrometer consisting ofN= 2 such MIs is fabricated and experimentally characterized using unknown broad bandwidth input signal spectra of about 180 nm centered around 1550 nm, a narrow line laser input signal, and a combination of broad and narrow band signals demonstrating spectral resolution of about 0.16 nm.

 

Microwave photonics uses light to carry and process microwave signals over a photonic link. However, light can instead be used as a stimulus to microwave devices that directly control microwave signals. Such optically controlled amplitude and phase-shift switches are investigated for use in reconfigurable microwave systems, but they suffer from large footprint, high optical power level required for switching, lack of scalability and complex integration requirements, restricting their implementation in practical microwave systems. Here, we report Monolithic Optically Reconfigurable Integrated Microwave Switches (MORIMSs) built on a CMOS compatible silicon photonic chip that addresses all of the stringent requirements. Our scalable micrometer-scale switches provide higher switching efficiency and require optical power orders of magnitude lower than the state-of-the-art. Also, it opens a new research direction on silicon photonic platforms integrating microwave circuitry. This work has important implications in reconfigurable microwave and millimeter wave devices for future communication networks.

 

We introduce and experimentally demonstrate a miniaturized integrated spectrometer operating over a broad bandwidth in the short-wavelength infrared (SWIR) spectrum that combines an add-drop ring resonator narrow band filter with a distributed Bragg reflector (DBR) based broadband filter realized in a silicon photonic platform. The contra-directional coupling DBR filter in this design consists of a pair of waveguide sidewall gratings that act as a broadband filter (i.e., 3.9 nm). The re-directed beam is then fed into the ring resonator which functions as a narrowband filter (i.e., 0.121 nm). In this scheme the free spectral range (FSR) limitation of the ring resonator is overcome by using the DBR as a filter to isolate a single ring resonance line. The overall design of the spectrometer is further simplified by simultaneously tuning both components through the thermo-optic effect. Moreover, several ring-grating spectrometer cells with different central wavelengths can be stacked in cascade in order to cover a broader spectrum bandwidth. This can be done by centering each unit cell on a different center wavelength such that the maximum range of one-unit cell corresponds to the minimum range of the next unit cell. This configuration enables high spectral resolution over a large spectral bandwidth and high extinction ratio (ER), making it suitable for a wide variety of applications.

 

Abstract Surface-enhanced Raman scattering (SERS) process results in a tremendous increase of Raman scattering cross section of molecules adsorbed to plasmonic metals and influenced by numerous physico-chemical factors such as geometry and optical properties of the metal surface, orientation of chemisorbed molecules and chemical environment. While SERS holds promise for single molecule sensitivity and optical sensing of DNA sequences, more detailed understanding of the rich physico-chemical interplay between various factors is needed to enhance predictive power of existing and future SERS-based DNA sensing platforms. In this work, we report on experimental results indicating that SERS spectra of adsorbed single-stranded DNA (ssDNA) isomers depend on the order on which individual bases appear in the 3-base long ssDNA due to intramolecular interaction between DNA bases. Furthermore, we experimentally demonstrate that the effect holds under more general conditions when the molecules do not experience chemical enhancement due to resonant charge transfer effect and also under standard Raman scattering without electromagnetic or chemical enhancements. Our numerical simulations qualitatively support the experimental findings and indicate that base permutation results in modification of both Raman and chemically enhanced Raman spectra. 

Abstract The past two decades have seen widespread efforts being directed toward the development of nanoscale lasers. A plethora of studies on single such emitters have helped demonstrate their advantageous characteristics such as ultrasmall footprints, low power consumption, and room-temperature operation. Leveraging knowledge about single nanolasers, the next phase of nanolaser technology will be geared toward scaling up design to form arrays for important applications. In this review, we discuss recent progress on the development of such array architectures of nanolasers. We focus on valuable attributes and phenomena realized due to unique array designs that may help enable real-world, practical applications. Arrays consisting of exactly two nanolasers are first introduced since they can serve as a building block toward comprehending the behavior of larger lattices. These larger-sized lattices can be distinguished depending on whether or not their constituent elements are coupled to one another in some form. While uncoupled arrays are suitable for applications such as imaging, biosensing, and even cryptography, coupling in arrays allows control over many aspects of the emission behavior such as beam directionality, mode switching, and orbital angular momentum. We conclude by discussing some important future directions involving nanolaser arrays. 

To realize ubiquitously used photonic integrated circuits, on-chip nanoscale sources are essential components. Subwavelength nanolasers, especially those based on a metal-clad design, already possess many desirable attributes for an on-chip source such as low thresholds, room-temperature operation and ultra-small footprints accompanied by electromagnetic isolation at pitch sizes down to ∼50 nm. Another valuable characteristic for a source would be control over its emission wavelength and intensity in real-time. Most efforts on tuning/modulation thus far report static changes based on irreversible techniques not suited for high-speed operation. In this study, we demonstratein-situdynamical tuning of the emission wavelength of a metallo-dielectric nanolaser at room temperature by applying an external DC electric field. Using an AC electric field, we show that it is also possible to modulate the output intensity of the nanolaser at high speeds. The nanolaser’s emission wavelength in the telecom band can be altered by as much as 8.35 nm with a tuning sensitivity of ∼1.01 nm/V. Additionally, the output intensity can be attenuated by up to 89%, a contrast sufficient for digital data communication purposes. Finally, we achieve an intensity modulation speed up to 400 MHz, limited only by the photodetector bandwidth used in this study, which underlines the capability of high-speed operation via this method. This is the first demonstration of a telecom band nanolaser source with dynamic spectral tuning and intensity modulation based on an external E-field to the best of our knowledge.

 

Surface-enhanced Raman spectroscopy (SERS) is an attractive method for bio-chemical sensing due to its potential for single molecule sensitivity and the prospect of DNA composition analysis. In this manuscript we leverage metal specific chemical enhancement effect to detect differences in SERS spectra of 200-base length single-stranded DNA (ssDNA) molecules adsorbed on gold or silver nanorod substrates, and then develop and train a linear regression as well as neural network models to predict the composition of ssDNA. Our results indicate that employing substrates of different metals that host a given adsorbed molecule leads to distinct SERS spectra, allowing to probe metal-molecule interactions under distinct chemical enhancement regimes. Leveraging this difference and combining spectra from different metals as an input for PCA (Principal Component Analysis) and NN (Neural Network) models, allows to significantly lower the detection errors compared to manual feature-choosing analysis as well as compared to the case where data from single metal is used. Furthermore, we show that NN model provides superior performance in the presence of complex noise and data dispersion factors that affect SERS signals collected from metal substrates fabricated on different days.

 

We demonstrate the thermo-optic properties of silicon-rich silicon nitride (SRN) films deposited using plasma-enhanced chemical vapor deposition (PECVD). Shifts in the spectral response of Mach-Zehnder interferometers (MZIs) as a function of temperature were used to characterize the thermo-optic coefficients of silicon nitride films with varying silicon contents. A clear relation is demonstrated between the silicon content and the exhibited thermo-optic coefficient in silicon nitride films, with the highest achievable coefficient being as high as (1.65±0.08) ×10⁻⁴K^-1. Furthermore, we realize an SRN multi-mode interferometer (MMI) based thermo-optic switch with over 20 dB extinction ratio and total power consumption for two-port switching of 50 mW.