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1. Realization of a wide steering end-fire facet optical phased array using silicon rich silicon nitride

   https://doi.org/10.1364/OL.476819  

   Nejadriahi, Hani; Gaur, Prabhav; Johnson, Karl; Pappert, Steve; Fainman, Yeshaiahu; Yu, Paul (January 2023, Optics Letters)

   The design, fabrication, and characterization of a 16-element optical phased array (OPA) using a high index (n = 3.1) silicon-rich silicon nitride (SRN) is demonstrated. We present one-dimensional beam steering with end-fire facet antennas over a wide steering range of >115° at a fixed wavelength of 1525 nm. A beam width of 6.3° has been measured at boresight, consistent with theory. We demonstrate SRN as a viable material choice for chip-scale OPA applications due to its high thermo-optic coefficient, high optical power handling capacity [negligible two-photon absorption (TPA)], wide transparency window, and CMOS compatibility. 

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2. Optical bistability in PECVD silicon-rich nitride

   https://doi.org/10.1364/OE.473928  

   Friedman, Alex; Belogolovskii, Dmitrii; Grieco, Andrew; Fainman, Yeshaiahu (November 2022, Optics Express)

   We present a study of optical bi-stability in a 3.02 refractive index at 1550nm plasma enhanced chemical vapor deposition (PECVD) silicon-rich nitride (SRN) film, as it pertains to bi-stable switching, memory applications, and thermal sensing applications. In this work we utilize an SRN ring resonator device, which we first characterize at low-power and then compare thermo-optic coefficients, (2.12 ± 0.125) × 10⁻⁴/°C, obtained from thermal-heating induced resonance shifts to optically induced resonance shifts as well as estimated propagation loss and absorption. We then measure the time response of this nonlinearity demonstrating the relaxation time to be 18.7 us, indicating the mechanism to be thermal in nature. Finally, we demonstrate bi-stable optical switching. 

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3. Efficient and compact thermo-optic phase shifter in silicon-rich silicon nitride

   https://doi.org/10.1364/OL.431757  

   Nejadriahi, Hani; Pappert, Steve; Fainman, Yeshaiahu; Yu, Paul (September 2021, Optics Letters)

   The design, fabrication, and characterization of low-loss ultra-compact bends in high-index ( $n=3.1$at $\mathrm{\lambda <\#comment/>}=1550\mathrm{n}\mathrm{m}$) plasma-enhanced chemical vapor deposition silicon-rich silicon nitride (SRN) were demonstrated and utilized to realize efficient, small footprint thermo-optic phase shifter. Compact bends were structured into a folded waveguide geometry to form a rectangular spiral within an area of $65\times <\#comment/>65\text{µ<\#comment/>}{\mathrm{m}}^2$, having a total active waveguide length of 1.2 mm. The device featured a phase-shifting efficiency of $8\mathrm{m}\mathrm{W}/\mathrm{\pi <\#comment/>}$and a 3 dB switching bandwidth of 15 KHz. We propose SRN as a promising thermo-optic platform that combines the properties of silicon and stoichiometric silicon nitride. 

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4. Determination of the nonlinear thermo-optic coefficient of silicon nitride and oxide using an effective index method

   https://doi.org/10.1364/OE.477102  

   Johnson, Karl; Alshamrani, Naif; Almutairi, Dhaifallah; Grieco, Andrew; Horvath, Cameron; Westwood-Bachman, Jocelyn_N; McKinlay, Alexandria; Fainman, Yeshaiahu (December 2022, Optics Express)

   There is little literature characterizing the temperature-dependent thermo-optic coefficient (TOC) for low pressure chemical vapor deposition (LPCVD) silicon nitride or plasma enhanced chemical vapor deposition (PECVD) silicon dioxide at temperatures above 300 K. In this study, we characterize these material TOC’s from approximately 300-460 K, yielding values of (2.51 ± 0.08) · 10⁻⁵K⁻¹for silicon nitride and (5.67 ± 0.53) · 10⁻⁶K⁻¹for silicon oxide at room temperature (300 K). We use a simplified experimental setup and apply an analytical technique to account for thermal expansion during the extraction process. We also show that the waveguide geometry and method used to determine the resonant wavelength have a substantial impact on the precision of our results, a fact which can be used to improve the precision of numerous ring resonator index sensing experiments. 

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5. Dynamics of Nonlinear Optical Losses in Silicon‐Rich Nitride Nano‐Waveguides

   https://doi.org/10.1002/adom.202401299  

   Belogolovskii, Dmitrii; Fainman, Yeshaiahu; Alic, Nikola (October 2024, Advanced Optical Materials)

   Wecker, Anja; Panarina, Nadezda (Ed.)

   Free carrier absorption (FCA) is established to be the cause of nonlinear losses in plasma‐enhanced chemical vapor deposition (PECVD) silicon‐rich nitride (SRN) waveguides. To validate this hypothesis, a photo‐induced current is measured in SRN thin films with refractive indices varying between 2.5 and 3.15 when a C‐band laser light is illuminating the SRN films at various powers, indicating the generation of free carriers. Furthermore, nonlinear loss dynamics is, for the first time, measured and characterized in detail in SRN waveguides by utilizing high peak power C‐band complex shape optical pulses for estimation of free carrier generation (FCG) and free carrier recombination (FCR) lifetimes and their dynamics. Both FCG and FCR are found to decrease with an increase in the refractive index of SRN, and, specifically, the FCR lifetimes are found (92 ± 7) ns, (39 ± 3) ns, and (31 ± 2) ns for the SRN indices of 2.7, 3, and 3.15, respectively. Lastly, nonlinear losses in high refractive index SRN waveguides are demonstrated to be minimized and altogether avoided when the pulse duration reduced below the free carrier generation lifetime, thus providing a way of taking a full advantage of the large inherent SRN nonlinear properties. 

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