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Abstract Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic non-volatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers. An interfacial perpendicular magnetic anisotropy energy density of 1.85 mJ/m²was obtained in Nb/CoFeB/MgO heterostructures. The tunneling magnetoresistance was evaluated in junctions with different thickness combinations and different annealing conditions. An optimized magnetoresistance of 120% was obtained at room temperature, with a damping parameter of 0.011 determined by ferromagnetic resonance. In addition, spin-transfer torque switching has also been successfully observed in these junctions with a quasistatic switching current density of 7.3$$\times \;10^{5}$$ $\times {10}^5$A/cm². 

Despite the promise of superior efficiency and scalability, real‐world deployment of emerging nanoelectronic platforms for brain‐inspired computing have been limited thus far, primarily because of inter‐device variations and intrinsic non‐idealities. In this work, mitigation of these issues is demonstrated by performing learning directly on practical devices through a hardware‐in‐loop approach, utilizing stochastic neurons based on heavy metal/ferromagnetic spin–orbit torque heterostructures. The probabilistic switching and device‐to‐device variability of the fabricated devices of various sizes is characterized to showcase the effect of device dimension on the neuronal dynamics and its consequent impact on network‐level performance. The efficacy of the hardware‐in‐loop scheme is illustrated in a deep learning scenario achieving equivalent software performance. This work paves the way for future large‐scale implementations of neuromorphic hardware and realization of truly autonomous edge‐intelligent devices. 

Topology and strong electron correlations are crucial ingredients in emerging quantum materials, yet their intersection in experimental systems has been relatively limited to date. Strongly correlated Weyl semimetals, particularly when magnetism is incorporated, offer a unique and fertile platform to explore emergent phenomena in novel topological matter and topological spintronics. The antiferromagnetic Weyl semimetal Mn 3 Sn exhibits many exotic physical properties such as a large spontaneous Hall effect and has recently attracted intense interest. In this work, we report synthesis of epitaxial Mn 3+ x Sn 1− x films with greatly extended compositional range in comparison with that of bulk samples. As Sn atoms are replaced by magnetic Mn atoms, the Kondo effect, which is a celebrated example of strong correlations, emerges, develops coherence, and induces a hybridization energy gap. The magnetic doping and gap opening lead to rich extraordinary properties, as exemplified by the prominent DC Hall effects and resonance-enhanced terahertz Faraday rotation.