Twodimensional electron systems subjected to high transverse magnetic fields can exhibit Fractional Quantum Hall Effects (FQHE). In the GaAs/AlGaAs 2D electron system, a double degeneracy of Landau levels due to electronspin, is removed by a small Zeeman spin splitting,
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting performance and spintronic nonvolatility could deliver unique functionality. Here we report the study of magnetic tunnel junctions with Nb as the heavy metal layers. An interfacial perpendicular magnetic anisotropy energy density of 1.85 mJ/m^{2}was obtained in Nb/CoFeB/MgO heterostructures. The tunneling magnetoresistance was evaluated in junctions with different thickness combinations and different annealing conditions. An optimized magnetoresistance of 120% was obtained at room temperature, with a damping parameter of 0.011 determined by ferromagnetic resonance. In addition, spintransfer torque switching has also been successfully observed in these junctions with a quasistatic switching current density of 7.3
 Award ID(s):
 1905783
 Publication Date:
 NSFPAR ID:
 10399686
 Journal Name:
 Scientific Reports
 Volume:
 13
 Issue:
 1
 ISSN:
 20452322
 Publisher:
 Nature Publishing Group
 Sponsoring Org:
 National Science Foundation
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