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Two-dimensional (2D) ternary materials recently generated interest in optoelectronics and energy-related applications, alongside their binary counterparts. To date, only a few naturally occurring layered 2D ternary materials have been explored. The plethora of benefits owed to reduced dimensionality prompted exploration of expanding non-layered ternary chalcogenides into the 2D realm. This work presents a templating method that uses 2D transition metal dichalcogenides as initiators to be converted into the corresponding ternary chalcogenide upon addition of copper, via a solution-phase synthesis, conducted in high boiling point solvents. The process starts with preparation of VSe₂nanosheets, which are next converted into Cu₃VSe₄sulvanite nanosheets (NSs) which retain the 2D geometry while presenting an X-ray diffraction pattern identical with the one for the bulk Cu₃VSe₄. Both the scanning electron microscopy and transmission microscopy electron microscopy show the presence of quasi-2D morphology. Recent studies of the sulfur-containing sulvanite Cu₃VS₄highlight the presence of an intermediate bandgap, associated with enhanced photovoltaic (PV) performance. The Cu₃VSe₄nanosheets reported herein exhibit multiple UV–Vis absorption peaks, related to the intermediate bandgaps similar to Cu₃VS₄and Cu₃VSe₄nanocrystals. To test the potential of Cu₃VSe₄NSs as an absorber for solar photovoltaic devices, Cu₃VSe₄NSs thin-films deposited on FTO were subjected to photoelectrochemical testing, showing p-type behavior and stable photocurrents of up to ~ 0.036 mA/cm². The photocurrent shows a ninefold increase in comparison to reported performance of Cu₃VSe₄nanocrystals. This proves that quasi-2D sulvanite nanosheets are amenable to thin-film deposition and could show superior PV performance in comparison to nanocrystal thin-films. The obtained electrical impedance spectroscopy signal of the Cu₃VSe₄ NSs-FTO based electrochemical cell fits an equivalent circuit with the circuit elements of solution resistance (R_s), charge-transfer resistance (R_ct), double-layer capacitance (C_dl), and Warburg impedance (W). The estimated charge transfer resistance value of 300 Ω cm²obtained from the Nyquist plot provides an insight into the rate of charge transfer on the electrode/electrolyte interface.

 

Dye-sensitized solar cells (DSSCs) hold unique promise in solar photovoltaics owing to their low-cost fabrication and high efficiency in ambient conditions. However, to improve their commercial viability, effective, and low-cost methods must be employed to enhance their light harvesting capabilities, and hence photovoltaic (PV) performance. Improving the absorption of incoming light is a critical strategy for maximizing solar cell efficiency while overcoming material limitations. Mesoporous silica nanoparticles (MSNs) were employed herein as a reflective layer on the back of transparent counter electrodes. Chemically synthesized MSNs were applied to DSSCs via bar coating as a facile fabrication step compatible with roll-to-roll manufacturing. The MSNs diffusely scatter the unused incident light transmitted through the DSSCs back into the photoactive layers, increasing the absorption of light by N719 dye molecules. This resulted in a 20% increase in power conversion efficiency (PCE), from 5.57% in a standard cell to 6.68% with the addition of MSNs. The improved performance is attributed to an increase in photon absorption which led to the generation of a higher number of charge carriers, thus increasing the current density in DSSCs. These results were corroborated with electrochemical impedance spectroscopy (EIS), which showed improved charge transport kinetics. The use of MSNs as reflectors proved to be an effective practical method for enhancing the performance of thin film solar cells. Due to silica’s abundance and biocompatibility, MSNs are an attractive material for meeting the low-cost and non-toxic requirements for commercially viable integrated PVs. 

Mesoporous silica nanoparticles (MSNs) are highly porous carriers used in drug and gene delivery research for biomedical applications due to their high surface area, narrow particle size distribution, and low toxicity. Incorporating disulfide (SS) bonds into the walls of MSNs (MSN-SSs) offers a dual pathway for drug release due to the pore delivery and collapsing porous structure after cellular engulfment. This study explores the effect of embedding disulfide bonds into MSNs through various structural and biological characterization methods. Raman spectroscopy is employed to detect the SS bonds, SEM and TEM for morphology analyses, and a BET analysis to determine the required amount of SSs for achieving the largest surface area. The MSN-SSs are further loaded with doxorubicin, an anticancer drug, to assess drug release behavior under various pH conditions. The MSN-SS system demonstrated an efficient pH-responsive drug release, with over 65% of doxorubicin released under acidic conditions and over 15% released under neutral conditions. Cleaving the SS bonds using dithiothreitol increased the release to 94% in acidic conditions and 46% in neutral conditions. Biocompatibility studies were conducted using cancer cells to validate the engulfment of the nanoparticle. These results demonstrate that MSN-SS is a feasible nanocarrier for controlled-release drug delivery. 

The class of ternary copper chalcogenides Cu3MX4 (M = V, Nb, Ta; X = S, Se, Te), also known as the sulvanite family, has attracted attention in the past decade as featuring promising materials for optoelectronic devices, including solar photovoltaics. Experimental and theoretical studies of these semiconductors have provided much insight into their properties, both in bulk and at the nanoscale. The recent realization of sulvanites at the nanoscale opens new avenues for the compounds toward printable electronics. This review is aimed at the consideration of synthesis methods, relevant properties and the recent developments of the most important sulvanites. 

Sulvanites have the parent formula Cu3MCh4. The metal M belongs to group 5 and Ch is a chalcogen. The tantalum sulvanites Cu3TaS4 and Cu3TaSe4 are predicted to have wide band gaps and p-type conductivity and show promise in optoelectronic applications. Their potential as p-type transparent conductors or efficient photocatalysts for visible-light water splitting is a valuable incentive to explore these materials in their nanoscale form, toward bottom-up processing opportunities. Reported herein are the first syntheses of nanosized Cu3TaS4 and Cu3TaSe4 sulvanites, which preserve the parent cubic crystal structure but show that morphology at the nanoscale is dependent of the reaction conditions. The two solution-based methods for synthesizing the tantalum S and Se sulvanites result in Cu3TaS4 or Cu3TaSe4 nanocrystals (NCs) with prismatic morphology, or, in the case of Cu3TaSe4, could lead to core-shell spherical nanostructures. The Cu3TaS4 NCs and Cu3TaSe4 NCs have good absorption in the UV-Vis region, while the Cu3TaSe4 core-shell NCs possess broad absorption bands not only in the UV-Vis but also in the near-infrared region. Photoluminescence measurements of Cu3TaS4 and Cu3TaSe4 reveal optical bandgaps of 2.54 and 2.32 eV, respectively, consistent with the values measured in bulk. Additionally, the current–voltage (I-V) curve of Cu3TaS4 NCs proves its electrical conductivity. 

The ternary chalcogenide Cu3VSe4 (CVSe) with sulvanite structure has been theoretically predicted to be a promising candidate for photovoltaic applications due to its suitable band-gap for solar absorption and the relatively earth-abundant elements in its composition. To realize the absorber layer via an inexpensive route, printed thin-films could be fabricated from dispersions of nano-sized Cu3VSe4 precursors. Herein, cubic Cu3VSe4 nanocrystals were successfully synthesized via a hot-injection method. Similar with reported Cu3VS4 nanocrystals, Cu3VSe4 nanocrystals with cubic structure exhibit three absorption bands in the UV-Visible range indicative of a potential intermediate bandgap existence. A thin film fabricated by depositing the nanoparticles Cu3VSe4 on FTO coated glass substrate, exhibited a p-type behavior and a photocurrent of ~ 4 μA/cm2 when measured in an electrochemical cell setting. This first demonstration of photocurrent exhibited by a CVSe nanocrystals thin film signifies a promising potential in photovoltaic applications.