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Epitaxial heterostructures based on oxide perovskites and III–V, II–VI and transition metal dichalcogenide semiconductors form the foundation of modern electronics and optoelectronics. Halide perovskites—an emerging family of tunable semiconductors with desirable properties—are attractive for applications such as solution-processed solar cells, light-emitting diodes, detectors and lasers. Their inherently soft crystal lattice allows greater tolerance to lattice mismatch, making them promising for heterostructure formation and semiconductor integration. Atomically sharp epitaxial interfaces are necessary to improve performance and for device miniaturization. However, epitaxial growth of atomically sharp heterostructures of halide perovskites has not yet been achieved, owing to their high intrinsic ion mobility, which leads to interdiffusion and large junction widths, and owing to their poor chemical stability, which leads to decomposition of prior layers during the fabrication of subsequent layers. Therefore, understanding the origins of this instability and identifying effective approaches to suppress ion diffusion are of great importance22–26. Here we report an effective strategy to substantially inhibit in-plane ion diffusion in two-dimensional halide perovskites by incorporating rigid π-conjugated organic ligands. We demonstrate highly stable and tunable lateral epitaxial heterostructures, multiheterostructures and superlattices. Near-atomically sharp interfaces and epitaxial growth are revealed by low-dose aberration-corrected high-resolution transmission electron microscopy. Molecular dynamics simulations confirm the reduced heterostructure disorder and larger vacancy formation energies of the two-dimensional perovskites in the presence of conjugated ligands. These findings provide insights into the immobilization and stabilization of halide perovskite semiconductors and demonstrate a materials platform for complex and molecularly thin superlattices, devices and integrated circuits. 

Two-dimensional (2D) organic–inorganic hybrid halide perovskites exhibit unique properties, such as long charge carrier lifetimes, high photoluminescence quantum efficiencies, and great tolerance to defects. Over the last several decades tremendous progress has occurred in the development of 2D layered halide perovskite semiconductor materials and devices. Chemical functionalization of 2D halide perovskites is an effective approach for tuning their electronic properties. A large amount of effort has been made in compositional engineering of the cations and anions in the perovskite lattice. However, few efforts have incorporated rationally designed semiconducting organic moieties into these systems to alter the overall chemical and optoelectronic properties of 2D perovskites. In fact, incorporation of large conjugated organic groups in the spatially confined inorganic perovskite matrix was found to be challenging, and this synthetic challenge hinders a deeper understanding of the materials’ structure–property relationships. Recently, exciting progress has been made regarding the molecular design, optical characterization, and device fabrication of novel 2D halide perovskite materials that incorporate functional organic semiconducting building blocks. In this article, we provide a timely review regarding this recent progress. Moreover, we discuss successes and current challenges regarding the synthesis, characterization, and device applications of such hybrid materials and provide a perspective on the true future promise of these advanced nanomaterials.