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A series of atomic-like photoluminescence (PL) emission peaks in UV region near 4.0 eV were created by thermal annealing hexagonal boron nitride (h-BN) single crystals in air. The pristine h-BN did not have these peaks, emitting strong phonon-assisted band edge PL with peaks at 5.78 and 5.89 eV. After annealing the h-BN crystals in ambient air, a new atomic-like sharp emission in UV region at 4.09 eV with a line width of 0.2 nm appeared along with its phonon replicas at 3.89 and 3.69 eV in the low temperature (8 K) PL measurement. Further testing demonstrated that annealing the h-BN samples in the temperature window of 700–950 °C for 60 min generated the atomic-like emission. The peak position of the emission line is stable with the temperature and PL excitation power. Our study also suggests that the defect responsible for the atomic-like emission resides in the surface region. 

Energy bandgap of AlxGa1−xN alloys can be tuned systematically from ∼ 3.4 to 6.1 eV by changing the alloy composition (x) from 0 to 1 and the direct bandgap nature is maintained in the entire range of alloy compositions which make the AlGaN alloys suitable materials for the development of light emitting diodes (LEDs) covering the ultraviolet (UV) spectral region from 210 to 400 nm. For LEDs in the deep UV regions (λ < 300 nm), Al-rich AlGaN alloys of Al content higher than 50% are required. Deep UV LEDs have applications in a wide range of fields including display, disinfection, medical, sensing, and communication. With recent progress in the material growth and electrical conductivity, Al-rich AlGaN alloys have emerged as unique wideband gap materials for the development of deep UV LEDs. In this review article, how the progress of Al-rich AlGaN alloys has made in terms of the material growth and electrical conductivity leading its emergence as deep UV materials have been reviewed. Challenges and prospects of the deep UV LEDs to improve the performance of the devices will also be discussed.