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Abstract Heat dissipation is a major limitation of high‐performance electronics. This is especially important in emerging nanoelectronic devices consisting of ultra‐thin layers, heterostructures, and interfaces, where enhancement in thermal transport is highly desired. Here, ultra‐high interfacial thermal conductance in encapsulated van der Waals (vdW) heterostructures with single‐layer transition metal dichalcogenides MX₂(MoS₂, WSe₂, WS₂) sandwiched between two hexagonal boron nitride (hBN) layers is reported. Through Raman spectroscopic measurements of suspended and substrate‐supported hBN/MX₂/hBN heterostructures with varying laser power and temperature, the out‐of‐plane interfacial thermal conductance in the vertical stack is calibrated. The measured interfacial thermal conductance between MX₂and hBN reaches 74 ± 25 MW m⁻²K⁻¹, which is at least ten times higher than the interfacial thermal conductance of MX₂in non‐encapsulation structures. Molecular dynamics (MD) calculations verify and explain the experimental results, suggesting a full encapsulation by hBN layers is accounting for the high interfacial conductance. This ultra‐high interfacial thermal conductance is attributed to the double heat transfer pathways and the clean and tight vdW interface between two crystalline 2D materials. The findings in this study reveal new thermal transport mechanisms in hBN/MX₂/hBN structures and shed light on building novel hBN‐encapsulated nanoelectronic devices with enhanced thermal management. 

Effective heat management plays a vital role in ensuring the performance and reliability of nanoelectronic devices. Here, we present a new practical approach for thermal characterization: The dual laser at same side Raman technique. This method is not only straightforward and reliable but also delivers accurate thermal property measurements. To demonstrate its capabilities, we applied the technique to bulk graphite and measured a thermal conductivity of 467 ± 86 W/(m K). This technique holds potential for measuring direction-dependent thermal conductivity, offering a promising avenue for future investigations. 

Flexible electronic devices with skin-like properties are hailed as revolutionary for the development of next-generation electronic devices, such as electric-skin and humanoid robotics. Graphene is intrinsically flexible due to its structural thinness in nature and are considered next-generation materials for wearable electronics. These devices usually experience a large mechanical deformation in use so as to achieve intimate conformal contact with human skin and to coordinate complex human motions, while heat dissipation has been a major limitation when the device is under a large mechanical strain. Unlike the small deformation (<1%) induced by intrinsic material factors such as lattice mismatch between material components in devices, a large mechanical deformation (>1%) by an external loading condition could lead to apparent changes to global geometric shapes and significantly impact thermal transport. In this study, we investigated the thermal conductivities of graphene under several large mechanical strains: 2.9%, 4.3%, and 6.1%. We used a refined opto-thermal Raman technique to characterize the thermal transport properties and discovered the thermal conductivities to be 2092 ± 502, 972 ± 87, 348 ± 52, and 97 ± 13 W/(m K) for the relaxed state, 2.9%, 4.3%, and 6.1% tensile strain, respectively. Our results showed a significant decreasing trend in thermal conductivities with an increasing mechanical strain. The findings in this study reveal new thermal transport mechanisms in 2D materials and shed light on building novel flexible nanoelectronic devices with enhanced thermal management. 

Low-dimension materials such as transition metal dichalcogenides (TMDCs) have received extensive research interest and investigation for electronic and optoelectronic applications. Due to their unique widely tunable band structures, they are good candidates for next-generation optoelectronic devices. Particularly, their photoluminescence properties, which are fundamental for optoelectronic applications, are highly sensitive to the nature of the band gap. Monolayer TMDCs in the room temperature range have presented a direct band gap behavior and bright photoluminescence. In this work, we investigate a popular TMDC material WSe2’s photoluminescence performance using a Raman spectroscopy laser with temperature dependence. With temperature variation, the lattice constant and the band gap change dramatically, and thus the photoluminescence spectra are changed. By checking the photoluminescence spectra at different temperatures, we are able to reveal the nature of direct-to-indirect band gap in monolayer WSe2. We also implemented density function theory (DFT) simulations to computationally investigate the band gap of WSe2 to provide comprehensive evidence and confirm the experimental results. Our study suggests that monolayer WSe2 is at the transition boundary between the indirect and direct band gap at room temperature. This result provides insights into temperature-dependent optical transition in monolayer WSe2 for quantum control, and is important for cultivating the potential of monolayer WSe2 in thermally tunable optoelectronic devices operating at room temperature. 

Low‐dimensional thermoelectric materials systems are proven to possess improved thermoelectric performance, either by enhancing the power factorS²σthrough quantum confinement, or decreasing thermal conductivity with numerous interfaces. The 2D tellurium, also called tellurene, is a newly discovered 2D material which showed great potential for thermoelectric applications. In this article, high‐quality tellurene‐like nanosheets are synthesized by the hydrothermal method and assembled into nanostructured bulk materials by low‐temperature hot press, and their thermoelectric performance is investigated. Ultraviolet–ozone treatment is used to remove organic surface ligands. Doping is realized with surface doping with chalcogenidometalates. It is found that the Seebeck coefficient and the thermal conductivity of the nanosheet‐assembled bulk samples increased by ≈20% and decreased by 43% compared to bulk tellurium, respectively. Meanwhile, the carrier mobility is approaching, yet still lower than bulk tellurium. Overall, the best bulk sample possesses azTof 0.1 at room temperature which is comparable to bulk Te. By further improving the mobility, this solution processable material can provide useful thermoelectric performance for room‐temperature applications. 

With the rise of two-dimensional (2D) materials, their excellent optical, electronic, and thermal properties different from bulk materials make them increasingly widely studied and commercialized. 2D materials’ exceptional physical properties and unique structures make them an ideal candidate for next-generation flexible and wearable devices. In this work, we created a manufacturing method to successfully transfer monolayer, bilayer, and trilayer graphene onto the flexible substrate, with trenches of micron size to suspend graphene. Thermal transport measurements have been characterized to prove the suspended region. The achievement of manufacturing 2D materials in suspended condition will allow us to study their intrinsic physical properties at a mechanical strain, as well as contribute to novel flexible and wearable electronic devices and sensors.