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Abstract Nanostructures represent a frontier where meticulous attention to the control and assessment of structural dimensions becomes a linchpin for their seamless integration into diverse technological applications. However, determining the critical dimensions and optical properties of nanostructures with precision still remains a challenging task. In this study, by using an integrative and comprehensive methodical series of studies, the evolution of the depolarization factors in the anisotropic Bruggeman effective medium approximation (AB‐EMA) is investigated. It is found that these anisotropic factors are extremely sensitive to the changes in critical dimensions of the nanostructure platforms. In order to perform a systematic characterization of these parameters, spatially coherent, highly‐ordered slanted nanocolumns are fabricated from zirconia, silicon, titanium, and permalloy on silicon substrates with varying column lengths using glancing angle deposition (GLAD). In tandem, broad‐spectral range Mueller matrix spectroscopic ellipsometry data, spanning from the near‐infrared to the vacuum UV (0.72–6.5 eV), is analyzed with a best‐match model approach based on the anisotropic Bruggeman effective medium theory. The anisotropic optical properties, including complex dielectric function, birefringence, and dichroism, are thereby extracted. Most notably, the research unveils a generalized, material‐independent inverse relationship between depolarization factors and column length. It is envisioned that the presented scaling rules will permit accurate prediction of optical properties of nanocolumnar thin films improving their integration and optimization for optoelectronic and photonic device applications. As an outlook, the highly porous nature and extreme birefringence properties of the fabricated columnar metamaterial platforms are further explored in the detection of nanoparticles from the cross‐polarized integrated spectral color variations. 

A generalized approach derived from Bloch's equation of motion of nuclear magnetic moments is presented to model the frequency, magnetic field, spin density, and temperature dependencies in the electromagnetic permeability tensor for materials with magnetic resonances. The resulting tensor model predicts characteristic polarization signatures which can be observed, for example, in Mueller matrix element spectra measured. When augmented with thermodynamic considerations and suitable Hamiltonian description of the magnetic eigenvalue spectrum, important parameters such as density, spectral amplitude distribution, relaxation time constants, and geometrical orientation parameters of the magnetic moments can be obtained from comparing the generalized model approach to experimental data. We demonstrate our approach by comparing model calculations with full Mueller matrix element spectra measured at an oblique angle of incidence in the terahertz spectral range, across electron spin resonance quintuplet transitions observed in wurtzite-structure GaN doped with iron. Our model correctly predicts the complexity of the polarization signatures observed in the 15 independent elements of the normalized Mueller matrix for both positive and negative magnetic fields and will become useful for future analysis of frequency and magnetic field-dependent magnetic resonance measurements. Published by the American Physical Society2024 

We investigate the time evolution of ZnO thin film growth in oxygen plasma-enhanced atomic layer deposition using in situ spectroscopic ellipsometry. The recently proposed dynamic-dual-box-model approach [Kilic et al., Sci. Rep. 10, 10392 (2020)] is used to analyze the spectroscopic data post-growth. With the help of this model, we explore the in-cycle surface modifications and reveal the repetitive layer-by-layer growth and surface roughness modification mechanisms during the ZnO ultrathin film deposition. The in situ complex-valued dielectric function of the amorphous ZnO thin film is also determined from the model analysis for photon energies of 1.7–4 eV. The dielectric function is analyzed using a critical point model approach providing parameters for bandgap energy, amplitude, and broadening in addition to the index of refraction and extinction coefficient. The dynamic-dual-box-model analysis reveals the initial nucleation phase where the surface roughness changes due to nucleation and island growth prior to film coalescence, which then lead to the surface conformal layer-by-layer growth with constant surface roughness. The thickness evolution is resolved with Angstrom-scale resolution vs time. We propose this method for fast development of growth recipes from real-time in situ data analysis. We also present and discuss results from x-ray diffraction, x-ray photoelectron spectroscopy, and atomic force microscopy to examine crystallographic, chemical, and morphological characteristics of the ZnO film. 

The anisotropic optical absorption edge of β-Ga2O3 follows a modified Beer–Lambert law having two effective absorption coefficients. The absorption coefficient of linearly polarized light reduces to the least absorbing direction beyond a critical penetration depth, which itself depends on polarization and wavelength. To understand this behavior, a Stokes vector analysis is performed to track the polarization state as a function of depth. The weakening of the absorption coefficient is associated with a gradual shift of linear polarization to the least absorbing crystallographic direction in the plane, which is along the a-exciton within the (010) plane or along the b-exciton in the (001) plane. We show that strong linear dichroism near the optical absorption edge causes this shift in β-Ga2O3, which arises from the anisotropy and spectral splitting of the physical absorbers, i.e., excitons. The linear polarization shift is accompanied by a variation in the ellipticity due to the birefringence of β-Ga2O3. Analysis of the phase relationship between the incoming electric field to that at a certain depth reveals the phase speed as an effective refractive index, which varies along different crystallographic directions. The critical penetration depth is shown to be correlated with the depth at which the ellipticity is maximal. Thus, the anisotropic Beer–Lambert law arises from the interplay of both the dichroic and birefringent properties of β-Ga2O3. 

Group-III nitrides have transformed solid-state lighting and are strategically positioned to revolutionize high-power and high-frequency electronics. To drive this development forward, a deep understanding of fundamental material properties, such as charge carrier behavior, is essential and can also unveil new and unforeseen applications. This underscores the necessity for novel characterization tools to study group-III nitride materials and devices. The optical Hall effect (OHE) emerges as a contactless method for exploring the transport and electronic properties of semiconductor materials, simultaneously offering insights into their dielectric function. This non-destructive technique employs spectroscopic ellipsometry at long wavelengths in the presence of a magnetic field and provides quantitative information on the charge carrier density, sign, mobility, and effective mass of individual layers in multilayer structures and bulk materials. In this paper, we explore the use of terahertz (THz) OHE to study the charge carrier properties in group-III nitride heterostructures and bulk material. Examples include graded AlGaN channel high-electron-mobility transistor (HEMT) structures for high-linearity devices, highlighting the different grading profiles and their impact on the two-dimensional electron gas (2DEG) properties. Next, we demonstrate the sensitivity of the THz OHE to distinguish the 2DEG anisotropic mobility parameters in N-polar GaN/AlGaN HEMTs and show that this anisotropy is induced by the step-like surface morphology. Finally, we present the temperature-dependent results on the charge carrier properties of 2DEG and bulk electrons in GaN with a focus on the effective mass parameter and review the effective mass parameters reported in the literature. These studies showcase the capabilities of the THz OHE for advancing the understanding and development of group-III materials and devices.