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1. PIMA-logic: a novel processing-in-memory architecture for highly flexible and energy-efficient logic computation

   https://doi.org/10.1145/3195970.3196092  

   Angizi, Shaahin ; He, Zhezhi ; Fan, Deliang ( June 2018 , 55th Annual Design Automation Conference)

   In this paper, we propose PIMA-Logic, as a novel Processing-in-Memory Architecture for highly flexible and efficient Logic computation. Insteadof integrating complex logic units in cost-sensitive memory, PIMA-Logic exploits a hardware-friendly approach to implement Boolean logic functions between operands either located in the same row or the same column within entire memory arrays. Furthermore, it can efficiently process more complex logic functions between multiple operands to further reduce the latency and power-hungry data movement. The proposed architecture is developed based on Spin Orbit Torque Magnetic Random Access Memory (SOT-MRAM) array and it can simultaneously work as a non-volatile memory and a reconfigurable in-memory logic. The device-to-architecture co-simulation results show that PIMA-Logic can achieve up to 56% and 31.6% improvements with respect to overall energy and delay on combinational logic benchmarks compared to recent Pinatubo architecture. We further implement an in-memory data encryption engine based on PIMA-Logic as a case study. With AES application, it shows 77.2% and 21% lower energy consumption compared to CMOS-ASIC and recent RIMPA implementation, respectively. 

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2. MRIMA: An MRAM-based In-Memory Accelerator

   https://doi.org/10.1109/TCAD.2019.2907886  

   Angizi, Shaahin ; He, Zhezhi ; Awad, Amro ; Fan, Deliang ( March 2019 , IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems)

   In this paper, we propose MRIMA, as a novel MRAM-based In-Memory Accelerator for non-volatile, flexible, and efficient in-memory computing. MRIMA transforms current Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) arrays to massively parallel computational units capable of working as both non-volatile memory and in-memory logic. Instead of integrating complex logic units in cost-sensitive memory, MRIMA exploits hardware-friendly bit-line computing methods to implement complete Boolean logic functions between operands within a memory array in a single clock cycle, overcoming the multi-cycle logic issue in contemporary Processing-In-Memory (PIM) platforms. We present practical case studies to demonstrate MRIMA’s acceleration for binary-weight and low bit-width Convolutional Neural Networks (CNN) as well as data encryption. Our device-to-architecture co-simulation results on CNN acceleration demonstrate that MRIMA can obtain 1.7× better energy-efficiency and 11.2× speed-up compared to ASICs, and, 1.8× better energy-efficiency and 2.4× speed-up over the best DRAM-based PIM solutions. As an AES in-memory encryption engine, MRIMA shows 77% and 21% lower energy consumption compared to CMOS-ASIC and recent domain wall-based design, respectively. 

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3. IMCS2: Novel Device-to-Architecture Co-Design for Low-Power In-Memory Computing Platform Using Coterminous Spin Switch

   https://doi.org/10.1109/TMAG.2018.2819959  

   Parveen, Farhana ; Angizi, Shaahin ; He, Zhezhi ; Fan, Deliang ( April 2018 , IEEE Transactions on Magnetics)

   Abstract--Spin switch (SS) is a promising spintronic device which exhibits compactness, low power, non-volatility, input-output isolation leveraging giant spin Hall effect, spin transfer torque, and dipolar coupling. In this paper, we propose a novel device-to-architecture co-design for an in-memory computing platform using coterminous SS (IMCS2), which could simultaneously work as non-volatile memory and reconfigurable in-memory logic (AND/NAND, OR/NOR, and XOR/XNOR) without add-on logic circuits to memory chip. The computed logic output could be simply read out like a normal magnetic random access memory bit cell using the shared memory peripheral circuits. Such intrinsic in-memory logic could be used to process data within memory to greatly reduce power-hungry and long distance data communication in the conventional von Neumann computing system. The IMCS2-based in-memory bulk bitwise Boolean vector operation shows ~9x energy saving and ~3x speedup compared with that of DRAM-based in-memory computing platform. We further employ in-memory multiplication to evaluate the performance of the proposed in-memory computing platform for vector-vector multiplication with different vector sizes. 

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4. Decentralized Offload-based Execution on Memory-centric Compute Cores

   https://doi.org/10.1145/3422575.3422778  

   Baskaran, Saambhavi ; Sampson, Jack ( September 2020 , International Symposium on Memory Systems (MEMSYS))

   With the end of Dennard scaling, power constraints have led to increasing compute specialization in the form of differently specialized accelerators integrated at various levels of the general-purpose system hierarchy. The result is that the most common general-purpose computing platform is now a heterogeneous mix of architectures even within a single die. Consequently, mapping application code regions into available execution engines has become a challenge due to different interfaces and increased software complexity. At the same time, the energy costs of data movement have become increasingly dominant relative to computation energy. This has inspired a move towards data-centric systems, where computation is brought to data, in contrast to traditional processing-centric models. However, enabling compute nearer memory entails its own challenges, including the interactions between distance-specialization and compute-specialization. The granularity of any offload to near(er) memory logic would impact the potential data transmission reduction, as smaller offloads will not be able to amortize the transmission costs of invocation and data return, while very large offloads can only be mapped onto logic that can support all of the necessary operations within kernel-scale codes, which exacerbates both area and power constraints. For better energy efficiency, each set of related operations should be mapped onto the execution engine that, among those capable of running the set of operations, best balances the data movement and the degree of compute specialization of that engine for this code. Further, this offload should proceed in a decentralized way that keeps both the data and control movement low for all transitions among engines and transmissions of operands and results. To enable such a decentralized offload model, we propose an architecture interface that enables a common offload model for accelerators across the memory hierarchy and a tool chain to automatically identify (in a distance-aware fashion) and map profitable code regions on specialized execution engines. We evaluate the proposed architecture for a wide range of workloads and show energy reduction compared to an energy-efficient in-order core. We also demonstrate better area efficiency compared to kernel-scale offloads. 

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5. (Digital Presentation) Oxide Memristors Based on SiO 2 with Cu/Ag Alloy Metallization for Neuromorphic Computing

   https://doi.org/10.1149/MA2022-0215808mtgabs  

   Qin, Fei ; Song, Han Wook ; Qin, Fei ( October 2022 , ECS Meeting Abstracts)

   By mimicking biomimetic synaptic processes, the success of artificial intelligence (AI) has been astounding with various applications such as driving automation, big data analysis, and natural-language processing.[1-4] Due to a large quantity of data transmission between the separated memory unit and the logic unit, the classical computing system with von Neumann architecture consumes excessive energy and has a significant processing delay.[5] Furthermore, the speed difference between the two units also causes extra delay, which is referred to as the memory wall.[6, 7] To keep pace with the rapid growth of AI applications, enhanced hardware systems that particularly feature an energy-efficient and high-speed hardware system need to be secured. The novel neuromorphic computing system, an in-memory architecture with low power consumption, has been suggested as an alternative to the conventional system. Memristors with analog-type resistive switching behavior are a promising candidate for implementing the neuromorphic computing system since the devices can modulate the conductance with cycles that act as synaptic weights to process input signals and store information.[8, 9]

   The memristor has sparked tremendous interest due to its simple two-terminal structure, including top electrode (TE), bottom electrode (BE), and an intermediate resistive switching (RS) layer. Many oxide materials, including HfO₂, Ta₂O₅, and IGZO, have extensively been studied as an RS layer of memristors. Silicon dioxide (SiO₂) features 3D structural conformity with the conventional CMOS technology and high wafer-scale homogeneity, which has benefited modern microelectronic devices as dielectric and/or passivation layers. Therefore, the use of SiO₂as a memristor RS layer for neuromorphic computing is expected to be compatible with current Si technology with minimal processing and material-related complexities.

   In this work, we proposed SiO₂-based memristor and investigated switching behaviors metallized with different reduction potentials by applying pure Cu and Ag, and their alloys with varied ratios. Heavily doped p-type silicon was chosen as BE in order to exclude any effects of the BE ions on the memristor performance. We previously reported that the selection of TE is crucial for achieving a high memory window and stable switching performance. According to the study which compares the roles of Cu (switching stabilizer) and Ag (large switching window performer) TEs for oxide memristors, we have selected the TE materials and their alloys to engineer the SiO₂-based memristor characteristics. The Ag TE leads to a larger memory window of the SiO₂memristor, but the device shows relatively large variation and less reliability. On the other hand, the Cu TE device presents uniform gradual switching behavior which is in line with our previous report that Cu can be served as a stabilizer, but with small on/off ratio.[9] These distinct performances with Cu and Ag metallization leads us to utilize a Cu/Ag alloy as the TE. Various compositions of Cu/Ag were examined for the optimization of the memristor TEs. With a Cu/Ag alloying TE with optimized ratio, our SiO₂based memristor demonstrates uniform switching behavior and memory window for analog switching applications. Also, it shows ideal potentiation and depression synaptic behavior under the positive/negative spikes (pulse train).

   In conclusion, the SiO₂memristors with different metallization were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of memristor, we integrated Cu, Ag and Cu/Ag alloy as TEs and compared the switch characteristics. Our encouraging results clearly demonstrate that SiO₂with Cu/Ag is a promising memristor device with synaptic switching behavior in neuromorphic computing applications.

   Acknowledgement

   This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.

   References

   [1] Younget al.,IEEE Computational Intelligence Magazine,vol. 13, no. 3, pp. 55-75, 2018.

   [2] Hadsellet al.,Journal of Field Robotics,vol. 26, no. 2, pp. 120-144, 2009.

   [3] Najafabadiet al.,Journal of Big Data,vol. 2, no. 1, p. 1, 2015.

   [4] Zhaoet al.,Applied Physics Reviews,vol. 7, no. 1, 2020.

   [5] Zidanet al.,Nature Electronics,vol. 1, no. 1, pp. 22-29, 2018.

   [6] Wulfet al.,SIGARCH Comput. Archit. News,vol. 23, no. 1, pp. 20–24, 1995.

   [7] Wilkes,SIGARCH Comput. Archit. News,vol. 23, no. 4, pp. 4–6, 1995.

   [8] Ielminiet al.,Nature Electronics,vol. 1, no. 6, pp. 333-343, 2018.

   [9] Changet al.,Nano Letters,vol. 10, no. 4, pp. 1297-1301, 2010.

   [10] Qinet al., Physica Status Solidi (RRL) - Rapid Research Letters, pssr.202200075R1, In press, 2022.

    

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