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1. Alloy Loss Mitigation Through Use of Barrier Layers During CdCl2 Processing of Cd0.60Zn0.4Te and Cd0.87Mg0.13Te

   https://doi.org/10.1109/PVSC.2018.8548155  

   Reich, Carey L. ; Swanson, Drew E. ; Onno, Arthur ; Shimpi, Tushar ; Metzger, Wyatt K. ; Sampath, Walajabad S. ; Holman, Zachary C. ( June 2018 , 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC))
2. Thermally Tunable Far-Infrared Metasurfaces Enabled by Ge2Sb2Te5 Phase-Change Material

   https://doi.org/10.1109/RAPID.2018.8508956  

   Yahiaoui, Riad ; Mathews, Jay ; Burrow, Joshua A. ; Agha, Imad ; Sevison, Gary ; Urbas, Augustine M. ; Sarangan, Andrew ; Searles, Thomas A. ( August 2018 , IEEE Rapid)

   The development of active metadevices continues to present keystone challenges in fields of plasmonics and photonics. Here, we demonstrate an analogue of electromagnetically induced transparency (EIT) effect in a far-infrared metasurface device via near-field coupling of bright and quasi-dark resonances resonating at nearly the same frequency with contrasting line widths. The proposed metasurface was further optimized numerically in order to demonstrate a reconfiguration effect (frequency-shift of the spectral response). The tunability property of the device is achieved by incorporating a thin layer of Ge 2 Sb 2 Te 5 (GST), a temperature-driven phase change material (PCM). Theoretical analysis based on a coupled Lorentz oscillator model explains the physical mechanism in the proposed design and shows a good agreement with the observed results. Such active hybrid EIT metadevices could have applications in tunable slow-light effects, delay bandwidth management and ultrafast laser induced switching. 

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3. 15.7 An 8.3MHz GaN Power Converter Using Markov Continuous RSSM for 35dBμV Conducted EMI Attenuation and One-Cycle TON Rebalancing for 27.6dB VO Jittering Suppression

   https://doi.org/10.1109/ISSCC.2019.8662380  

   Chen, Yingping ; Ma, D. Brian ( February 2019 , IEEE International Solid- State Circuits Conference (ISSCC))
4. Co-Sublimated Polycrystalline Cd1-xZnx Te Films for Multi-junction Solar Cells

   https://doi.org/10.1109/PVSC.2018.8547657  

   Shimpi, Tushar ; Swanson, Drew ; Reich, Carey ; Kephart, Jason ; Kindvall, Anna ; Pandey, Ramesh ; Holman, Zachary ; Barth, Kurt ; Sampath, Walajabad ( June 2018 , 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC))
5. A new semiconductor: Ti0.5Mg0.5N(001)

   https://doi.org/10.1109/NANOTECH.2018.8653564  

   Wang, Baiwei ; Gall, Daniel ( November 2018 , 2018 IEEE Nanotechnology Symposium (ANTS), Albany, NY, 2018)

   Ti0.5Mg0.5N has recently been predicted to be a semiconductor with a 1.3 eV band gap and promising properties for thermoelectric and plasmonic devices. As a first step towards experimental validation, epitaxial Ti0.5Mg0.5N(001) layers are deposited on MgO(001) by reactive magnetron co-sputtering from titanium and magnesium targets at 600 °C in pure N2 atmospheres. X-ray diffraction ω-2θ scans, ω-rocking curves, φ-scans, and high resolution reciprocal space maps show that Ti0.5Mg0.5N alloys form a pseudobinary rocksalt structure and are single crystals with a cube-on-cube epitaxial relationship with the substrate: (001)TiMgN║(001)MgO and [100]TiMgN║[100]MgO. A 275-nm-thick Ti0.5Mg0.5N layer is fully relaxed and exhibits a 002 ω-rocking curve width ω = 0.73°, while a 36-nm-thick layer is fully strained and has a ω = 0.49°. These results indicate a thickness-dependent strain state which suggests a critical thickness for misfit dislocation nucleation and glide which is between 36 and 275 nm. A measured negative temperature coefficient of resistivity in combination with a low optical absorption coefficient of 0.25 × 105 cm 1 for λ = 740 nm, and a vanishing density of states at the Fermi level measured by x-ray photoelectron spectroscopy support the prediction that Ti0.5Mg0.5N is a semiconductor. 

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