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1. Co-Sublimated Polycrystalline Cd1-xZnx Te Films for Multi-junction Solar Cells

   https://doi.org/10.1109/PVSC.2018.8547657  

   Shimpi, Tushar ; Swanson, Drew ; Reich, Carey ; Kephart, Jason ; Kindvall, Anna ; Pandey, Ramesh ; Holman, Zachary ; Barth, Kurt ; Sampath, Walajabad ( June 2018 , 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC))
2. Thermally Tunable Far-Infrared Metasurfaces Enabled by Ge2Sb2Te5 Phase-Change Material

   https://doi.org/10.1109/RAPID.2018.8508956  

   Yahiaoui, Riad ; Mathews, Jay ; Burrow, Joshua A. ; Agha, Imad ; Sevison, Gary ; Urbas, Augustine M. ; Sarangan, Andrew ; Searles, Thomas A. ( August 2018 , IEEE Rapid)

   The development of active metadevices continues to present keystone challenges in fields of plasmonics and photonics. Here, we demonstrate an analogue of electromagnetically induced transparency (EIT) effect in a far-infrared metasurface device via near-field coupling of bright and quasi-dark resonances resonating at nearly the same frequency with contrasting line widths. The proposed metasurface was further optimized numerically in order to demonstrate a reconfiguration effect (frequency-shift of the spectral response). The tunability property of the device is achieved by incorporating a thin layer of Ge 2 Sb 2 Te 5 (GST), a temperature-driven phase change material (PCM). Theoretical analysis based on a coupled Lorentz oscillator model explains the physical mechanism in the proposed design and shows a good agreement with the observed results. Such active hybrid EIT metadevices could have applications in tunable slow-light effects, delay bandwidth management and ultrafast laser induced switching. 

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3. CdS barrier to minimize Zn loss during CdCl2 treatment of Cd-Zn-Te absorbers

   https://doi.org/10.1016/j.solener.2018.08.060  

   Shimpi, Tushar M. ; Swanson, Drew E. ; Drayton, Jennifer ; Abbas, Ali ; Walls, John M. ; Barth, Kurt L. ; Sampath, Walajabad S. ( October 2018 , Solar Energy)
4. Quaternary Chalcogenide Semiconductors with 2D Structures: Rb 2 ZnBi 2 Se 5 and Cs 6 Cd 2 Bi 8 Te 17

   https://doi.org/10.1021/acs.inorgchem.8b01383  

   Zhao, Jing ; Hao, Shiqiang ; Islam, Saiful M. ; Chen, Haijie ; Ma, Shulan ; Wolverton, Chris ; Kanatzidis, Mercouri G. ( July 2018 , Inorganic Chemistry)
5. 20%-efficient polycrystalline Cd(Se,Te) thin-film solar cells with compositional gradient near the front junction

   https://doi.org/10.1038/s41467-022-35442-8  

   Li, Deng-Bing ; Bista, Sandip S. ; Awni, Rasha A. ; Neupane, Sabin ; Abudulimu, Abasi ; Wang, Xiaoming ; Subedi, Kamala K. ; Jamarkattel, Manoj K. ; Phillips, Adam B. ; Heben, Michael J. ; et al ( December 2022 , Nature Communications)

   Bandgap gradient is a proven approach for improving the open-circuit voltages (V_OCs) in Cu(In,Ga)Se₂and Cu(Zn,Sn)Se₂thin-film solar cells, but has not been realized in Cd(Se,Te) thin-film solar cells, a leading thin-film solar cell technology in the photovoltaic market. Here, we demonstrate the realization of a bandgap gradient in Cd(Se,Te) thin-film solar cells by introducing a Cd(O,S,Se,Te) region with the same crystal structure of the absorber near the front junction. The formation of such a region is enabled by incorporating oxygenated CdS and CdSe layers. We show that the introduction of the bandgap gradient reduces the hole density in the front junction region and introduces a small spike in the band alignment between this and the absorber regions, effectively suppressing the nonradiative recombination therein and leading to improved V_OCs in Cd(Se,Te) solar cells using commercial SnO₂buffers. A champion device achieves an efficiency of 20.03% with a V_OCof 0.863 V.

    

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