As a promising alternative to the mainstream CoFeB/MgO system with interfacial perpendicular magnetic anisotropy (PMA),
A new semiconductor: Ti0.5Mg0.5N(001)
Ti0.5Mg0.5N has recently been predicted to be a semiconductor with a 1.3 eV band gap and promising properties for thermoelectric and plasmonic devices. As a first step towards experimental validation, epitaxial Ti0.5Mg0.5N(001) layers are deposited on MgO(001) by reactive magnetron co-sputtering from titanium and magnesium targets at 600 °C in pure N2 atmospheres. X-ray diffraction ω-2θ scans, ω-rocking curves, φ-scans, and high resolution reciprocal space maps show that Ti0.5Mg0.5N alloys form a pseudobinary rocksalt structure and are single crystals with a cube-on-cube epitaxial relationship with the substrate: (001)TiMgN║(001)MgO and [100]TiMgN║[100]MgO. A 275-nm-thick Ti0.5Mg0.5N layer is fully relaxed and exhibits a 002 ω-rocking curve width ω = 0.73°, while a 36-nm-thick layer is fully strained and has a ω = 0.49°. These results indicate a thickness-dependent strain state which suggests a critical thickness for misfit dislocation nucleation and glide which is between 36 and 275 nm. A measured negative temperature coefficient of resistivity in combination with a low optical absorption coefficient of 0.25 × 105 cm 1 for λ = 740 nm, and a vanishing density of states at the Fermi level measured by x-ray photoelectron spectroscopy support the prediction that Ti0.5Mg0.5N is a semiconductor.
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- NSF-PAR ID:
- 10089435
- Date Published:
- Journal Name:
- 2018 IEEE Nanotechnology Symposium (ANTS), Albany, NY, 2018
- Page Range / eLocation ID:
- 1 to 5
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Accepted Manuscript1.0
- Conference Paper:
- https://doi.org/10.1109/NANOTECH.2018.8653564
