The transfer‐free direct growth of high‐performance materials and devices can enable transformative new technologies. Here, room‐temperature field‐effect hole mobilities as high as 707 cm2V−1s−1are reported, achieved using transfer‐free, low‐temperature (≤120 °C) direct growth of helical tellurium (Te) nanostructure devices on SiO2/Si. The Te nanostructures exhibit significantly higher device performance than other low‐temperature grown semiconductors, and it is demonstrated that through careful control of the growth process, high‐performance Te can be grown on other technologically relevant substrates including flexible plastics like polyethylene terephthalate and graphene in addition to amorphous oxides like SiO2/Si and HfO2. The morphology of the Te films can be tailored by the growth temperature, and different carrier scattering mechanisms are identified for films with different morphologies. The transfer‐free direct growth of high‐mobility Te devices can enable major technological breakthroughs, as the low‐temperature growth and fabrication is compatible with the severe thermal budget constraints of emerging applications. For example, vertical integration of novel devices atop a silicon complementary metal oxide semiconductor platform (thermal budget <450 °C) has been theoretically shown to provide a 10× systems level performance improvement, while flexible and wearable electronics (thermal budget <200 °C) can revolutionize defense and medical applications.
Since the first discovery of graphene, 2D materials are drawing tremendous attention due to their atomic thickness and superior properties. Fabrication of high‐quality micro‐/nanopatterns of 2D materials is essential for their applications in both nanoelectronics and nanophotonics. In this work, an all‐optical lithographic technique, optothermoplasmonic nanolithography (OTNL), is developed to achieve high‐throughput, versatile, and maskless patterning of different atomic layers. Low‐power (≈5 mW µm−2) and high‐resolution patterning of both graphene and MoS2monolayers is demonstrated through exploiting thermal oxidation and sublimation at the highly localized thermoplasmonic hotspots. Density functional theory simulations reveal that Au nanoparticles reduce the formation energy (≈0.6 eV) of C monovacancies through bonding between undercoordinated C and Au, leading to a significant Au‐catalyzed graphene oxidation and a reduction of the required laser operation power. Programmable patterning of 2D materials into complex and large‐scale nanostructures is further demonstrated. With its low‐power, high‐resolution, and versatile patterning capability, OTNL offers the possibility to scale up the fabrication of nanostructured 2D materials for many applications in photonic and electronic devices.
more » « less- Award ID(s):
- 1704634
- NSF-PAR ID:
- 10067906
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- Advanced Functional Materials
- Volume:
- 28
- Issue:
- 41
- ISSN:
- 1616-301X
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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