Additive manufacturing allows fabrication of custom-shaped thermoelectric materials while minimizing waste, reducing processing steps, and maximizing integration compared to conventional methods. Establishing the process-structure-property relationship of laser additive manufactured thermoelectric materials facilitates enhanced process control and thermoelectric performance. This research focuses on laser processing of bismuth telluride (Bi 2 Te 3 ), a well-established thermoelectric material for low temperature applications. Single melt tracks under various parameters (laser power, scan speed and number of scans) were processed on Bi 2 Te 3 powder compacts. A detailed analysis of the transition in the melting mode, grain growth, balling formation, and elemental composition is provided. Rapid melting and solidification of Bi 2 Te 3 resulted in fine-grained microstructure with preferential grain growth along the direction of the temperature gradient. Experimental results were corroborated with simulations for melt pool dimensions as well as grain morphology transitions resulting from the relationship between temperature gradient and solidification rate. Samples processed at 25 W, 350 mm/s with 5 scans resulted in minimized balling and porosity, along with columnar grains having a high density of dislocations.
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Laser additive manufacturing of powdered bismuth telluride
Traditional manufacturing methods restrict the expansion of thermoelectric technology. Here, we demonstrate a new manufacturing approach for thermoelectric materials. Selective laser melting, an additive manufacturing technique, is performed on loose thermoelectric powders for the first time. Layer-by-layer construction is realized with bismuth telluride, Bi 2 Te 3 , and an 88% relative density was achieved. Scanning electron microscopy results suggest good fusion between each layer although multiple pores exist within the melted region. X-ray diffraction results confirm that the Bi 2 Te 3 crystal structure is preserved after laser melting. Temperature-dependent absolute Seebeck coefficient, electrical conductivity, specific heat, thermal diffusivity, thermal conductivity, and dimensionless thermoelectric figure of merit ZT are characterized up to 500 °C, and the bulk thermoelectric material produced by this technique has comparable thermoelectric and electrical properties to those fabricated from traditional methods. The method shown here may be applicable to other thermoelectric materials and offers a novel manufacturing approach for thermoelectric devices.
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- Award ID(s):
- 1748188
- NSF-PAR ID:
- 10090276
- Date Published:
- Journal Name:
- Journal of Materials Research
- Volume:
- 33
- Issue:
- 23
- ISSN:
- 0884-2914
- Page Range / eLocation ID:
- 4031 to 4039
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract Thermoelectric generators are an environmentally friendly and reliable solid‐state energy conversion technology. Flexible and low‐cost thermoelectric generators are especially suited to power flexible electronics and sensors using body heat or other ambient heat sources. Bismuth telluride (Bi2Te3) based thermoelectric materials exhibit their best performance near room temperature making them an ideal candidate to power wearable electronics and sensors using body heat. In this report, Bi2Te3thin films are deposited on a flexible polyimide substrate using low‐cost and scalable manufacturing methods. The synthesized Bi2Te3nanocrystals have a thickness of 35 ± 15 nm and a lateral dimension of 692 ± 186 nm. Thin films fabricated from these nanocrystals exhibit a peak power factor of 0.35 mW m−1·K−2at 433 K, which is among the highest reported values for flexible thermoelectric films. In order to evaluate the flexibility of the thin films, static and dynamic bending tests are performed while monitoring the change in electrical resistivity. After 1000 bending cycles over a 50 mm radius of curvature, the change in electrical resistance of the film is 23%. Using Bi2Te3solutions, the ability to print thermoelectric thin films with an aerosol jet printer is demonstrated, highlighting the potential of additive manufacturing techniques for fabricating flexible thermoelectric generators.
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The Mg 3 Sb 2− x Bi x family has emerged as the potential candidates for thermoelectric applications due to their ultra-low lattice thermal conductivity ( κ L ) at room temperature (RT) and structural complexity. Here, using ab initio calculations of the electron-phonon averaged (EPA) approximation coupled with Boltzmann transport equation (BTE), we have studied electronic, phonon and thermoelectric properties of Mg 3 Sb 2− x Bi x (x = 0, 1, and 2) monolayers. In violation of common mass-trend expectations, increasing Bi element content with heavier Zintl phase compounds yields an abnormal change in κ L in two-dimensional Mg 3 Sb 2− x Bi x crystals at RT (∼0.51, 1.86, and 0.25 W/mK for Mg 3 Sb 2 , Mg 3 SbBi, and Mg 3 Bi 2 ). The κ L trend was detailedly analyzed via the phonon heat capacity, group velocity and lifetime parameters. Based on quantitative electronic band structures, the electronic bonding through the crystal orbital Hamilton population (COHP) and electron local function analysis we reveal the underlying mechanism for the semiconductor-semimetallic transition of Mg 3 Sb 2-− x Bi x compounds, and these electronic transport properties (Seebeck coefficient, electrical conductivity, and electronic thermal conductivity) were calculated. We demonstrate that the highest dimensionless figure of merit ZT of Mg 3 Sb 2− x Bi x compounds with increasing Bi content can reach ∼1.6, 0.2, and 0.6 at 700 K, respectively. Our results can indicate that replacing heavier anion element in Zintl phase Mg 3 Sb 2− x Bi x materials go beyond common expectations (a heavier atom always lead to a lower κ L from Slack’s theory), which provide a novel insight for regulating thermoelectric performance without restricting conventional heavy atomic mass approach.more » « less
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Abstract Bismuth telluride is the working material for most Peltier cooling devices and thermoelectric generators. This is because Bi2Te3(or more precisely its alloys with Sb2Te3for p‐type and Bi2Se3for n‐type material) has the highest thermoelectric figure of merit,
zT , of any material around room temperature. Since thermoelectric technology will be greatly enhanced by improving Bi2Te3or finding a superior material, this review aims to identify and quantify the key material properties that make Bi2Te3such a good thermoelectric. The largezT can be traced to the high band degeneracy, low effective mass, high carrier mobility, and relatively low lattice thermal conductivity, which all contribute to its remarkably high thermoelectric quality factor. Using literature data augmented with newer results, these material parameters are quantified, giving clear insight into the tailoring of the electronic band structure of Bi2Te3by alloying, or reducing thermal conductivity by nanostructuring. For example, this analysis clearly shows that the minority carrier excitation across the small bandgap significantly limits the thermoelectric performance of Bi2Te3, even at room temperature, showing that larger bandgap alloys are needed for higher temperature operation. Such effective material parameters can also be used for benchmarking future improvements in Bi2Te3or new replacement materials. -
This work evaluates wearable thermoelectric (TE) devices consisting of nanocomposite thermoelectric materials, aluminum nitride ceramic headers, and a flexible and stretchable circuit board. These types of wearable systems are part of a broader effort to harvest thermal energy from the body and convert it into electrical energy to power wearable electronics. Thermoelectric generators are made of p-type (Bi,Sb)2Te3 and n-type Bi2(Te,Se)3. The nanocomposite thermoelectric materials investigated in this research address the two fundamental challenges for body heat harvesting. The first challenge is related to the unavailability of high zT n-type materials near the body temperature. The second challenge is related to the thermoelectric power factor. To improve the zT, one has to increase the power factor simultaneously while reducing the thermal conductivity. Our nanocomposites result in enhancement of the TE power factor along with the reduction of the thermal conductivity. The fundamental reason is a nanoscale effect that happens only when the energy distribution function of the carriers does not relax to that of the bulk material in the crystallites. Ten p-type and ten n-type nanocomposite ingots were synthesized and characterized in this research. All ingots were characterized versus their thermoelectric properties and they all showed similarly enhanced properties. Our nanocomposites, compared to commercial materials, have better zT and thermal resistivity by 40% and 75% for p-type, respectively, and 15% and 140% for n-type. Compared to the state-of-the-art materials, our nanocomposites produce significantly higher power due to their optimized properties for the body temperature.more » « less
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1557/jmr.2018.390
