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This paper presents a novel transposed MRAM architecture (WinEdge) specifically optimized for Winograd convolution acceleration in edge computing devices. Leveraging Magnetic Tunnel Junctions (MTJs) with Spin Hall Effect (SHE)-assisted Spin-Transfer Torque (STT) writing, the proposed design enables a single SHE current to simultaneously write data to four MTJs, substantially reducing power consumption. Additionally, the integration of stacked MTJs significantly improves storage density. The proposed WinEdge efficiently supports both standard and transposed data access modes regardless of bit-width, achieving up to 36% lower power, 47% reduced energy consumption, and 28% faster processing speed compared to existing designs. Simulations conducted in 45 nm CMOS technology validate its superiority over conventional SRAM-based solutions for convolutional neural network (CNN) acceleration in resource-constrained edge environments.
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Clockless Spin-based Look-Up Tables with Wide Read Margin
In this paper, we develop a 6-input fracturable non-volatile Clockless LUT (C-LUT) using spin Hall effect (SHE)-based Magnetic Tunnel Junctions (MTJs) and provide a detailed comparison between the SHE-MTJ-based C-LUT and Spin Transfer Torque (STT)-MTJ-based C-LUT. The proposed C-LUT offers an attractive alternative for implementing combinational logic as well as sequential logic versus previous spin-based LUT designs in the literature. Foremost, C-LUT eliminates the sense amplifier typically employed by using a differential polarity dual MTJ design, as opposed to a static reference resistance MTJ. This realizes a much wider read margin and the Monte Carlo simulation of the proposed fracturable C-LUT indicates no read and write errors in the presence of a variety of process variations scenarios involving MOS transistors as well as MTJs. Additionally, simulation results indicate that the proposed C-LUT reduces the standby power dissipation by $5.4$-fold compared to the SRAM-based LUT. Furthermore, the proposed SHE-MTJ-based C-LUT reduces the area by 1.3-fold and 2-fold compared to the SRAM-based LUT and the STT-MTJ-based C-LUT, respectively.
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- Award ID(s):
- 1810256
- PAR ID:
- 10092048
- Date Published:
- Journal Name:
- ACM Great Lakes Symposium on VLSI 2019
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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