We fabricate and measure electrically-gated tunnel junctions in which the insulating barrier is a sliding van der Waals ferroelectric made from parallel-stacked bilayer hexagonal boron nitride and the electrodes are single-layer graphene. Despite the nominally-symmetric tunnel-junction structure, these devices can exhibit substantial electroresistance upon reversing the ferroelectric polarization. The magnitude and sign of tunneling electroresistance are tunable by bias and gate voltage. We show that this behavior can be understood within a simple tunneling model that takes into account the quantum capacitance of the graphene electrodes, so that the tunneling densities of states in the electrodes are separately modified as a function of bias and gate voltage.
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Origin of the anomalous size-dependent increase of capacitance in boron nitride–graphene nanocapacitors
The anomalous size-dependent increase in capacitance in boron nitride–graphene nanocapacitors is a puzzle that has been initially attributed to the negative quantum capacitance exhibited by this particular materials system. However, we show in this work that the anomalous nanocapacitance of this system is not due to quantum effects but has pure electrostatic origin and can be explained by a parallel-plate (square) nanocapacitor model filled with a dielectric film characterized by a size/thickness-dependent relative permittivity. The model presented here is in excellent agreement with the experimentally measured capacitance values of recently fabricated graphene and hexagonal boron nitride nanocapacitors. The results obtained seem to suggest that the size-dependent increase of capacitance in the above-mentioned family of nanocapacitors can be explained by classical finite-size geometric electrostatic effects.
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- Award ID(s):
- 1705084
- PAR ID:
- 10107912
- Date Published:
- Journal Name:
- RSC Advances
- Volume:
- 9
- Issue:
- 14
- ISSN:
- 2046-2069
- Page Range / eLocation ID:
- 7849 to 7853
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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