Abstract The phase transitions of two-dimensional (2D) materials are key to the operation of many devices with applications including energy storage and low power electronics. Nanoscale confinement in the form of reduced thickness can modulate the phase transitions of 2D materials both in their thermodynamics and kinetics. Here, using in situ Raman spectroscopy we demonstrate that reducing the thickness of MoS 2 below five layers slows the kinetics of the phase transition from 2H- to 1T′-MoS 2 induced by the electrochemical intercalation of lithium. We observe that the growth rate of 1T′ domains is suppressed in thin MoS 2 supported by SiO 2 , and attribute this growth suppression to increased interfacial effects as the thickness is reduced below 5 nm. The suppressed kinetics can be reversed by placing MoS 2 on a 2D hexagonal boron nitride ( h BN) support, which readily facilitates the release of strain induced by the phase transition. Additionally, we show that the irreversible conversion of intercalated 1T′-MoS 2 into Li 2 S and Mo is also thickness-dependent and the stability of 1T′-MoS 2 is significantly increased below five layers, requiring a much higher applied electrochemical potential to break down 1T′-MoS 2 into Li 2 S and Mo nanoclusters.
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Surface depletion field in 2D perovskite microplates: Structural phase transition, quantum confinement and Stark effect
Surface depletion field would introduce the depletion region near surface and thus could significantly alter the optical, electronic and optoelectronic properties of the materials, especially low-dimensional materials. Two-dimensional (2D) organic—inorganic hybrid perovskites with van der Waals bonds in the out-of-plane direction are expected to have less influence from the surface depletion field; nevertheless, studies on this remain elusive. Here we report on how the surface depletion field affects the structural phase transition, quantum confinement and Stark effect in 2D (BA)2PbI4 perovskite microplates by the thickness-, temperature- and power-dependent photoluminescence (PL) spectroscopy. Power dependent PL studies suggest that high-temperature phase (HTP) and low-temperature phase (LTP) can coexist in a wider temperature range depending on the thickness of the 2D perovskite microplates. With the decrease of the microplate thickness, the structural phase transition temperature first gradually decreases and then increases below 25 nm, in striking contrast to the conventional size dependent structural phase transition. Based on the thickness evolution of the emission peaks for both high-temperature phase and low-temperature phase, the anomalous size dependent phase transition could probably be ascribed to the surface depletion field and the surface energy difference between polymorphs. This explanation was further supported by the temperature dependent PL studies of the suspended microplates and encapsulated microplates with graphene and boron nitride flakes. Along with the thickness dependent phase transition, the emission energies of free excitons for both HTP and LTP with thickness can be ascribed to the surface depletion induced confinement and Stark effect.
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- Award ID(s):
- 1301346
- NSF-PAR ID:
- 10121283
- Date Published:
- Journal Name:
- Nano Research
- ISSN:
- 1998-0124
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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Abstract A new approach to generate a two‐photon up‐conversion photoluminescence (PL) by directly exciting the gap states with continuous‐wave (CW) infrared photoexcitation in solution‐processing quasi‐2D perovskite films [(PEA)2(MA)4Pb5Br16with
n = 5] is reported. Specifically, a visible PL peaked at 520 nm is observed with the quadratic power dependence by exciting the gap states with CW 980 nm laser excitation, indicating a two‐photon up‐conversion PL occurring in quasi‐2D perovskite films. Decreasing the gap states by reducing then value leads to a dramatic decrease in the two‐photon up‐conversion PL signal. This confirms that the gap states are indeed responsible for generating the two‐photon up‐conversion PL in quasi‐2D perovskites. Furthermore, mechanical scratching indicates that the different‐n ‐value nanoplates are essentially uniformly formed in the quasi‐2D perovskite films toward generating multi‐photon up‐conversion light emission. More importantly, the two‐photon up‐conversion PL is found to be sensitive to an external magnetic field, indicating that the gap states are essentially formed as spatially extended states ready for multi‐photon excitation. Polarization‐dependent up‐conversion PL studies reveal that the gap states experience the orbit–orbit interaction through Coulomb polarization to form spatially extended states toward developing multi‐photon up‐conversion light emission in quasi‐2D perovskites. -
Spin and valley degrees of freedom in materials without inversion symmetry promise previously unknown device functionalities, such as spin-valleytronics. Control of material symmetry with electric fields (ferroelectricity), while breaking additional symmetries, including mirror symmetry, could yield phenomena where chirality, spin, valley, and crystal potential are strongly coupled. Here we report the synthesis of a halide perovskite semiconductor that is simultaneously photoferroelectricity switchable and chiral. Spectroscopic and structural analysis, and first-principles calculations, determine the material to be a previously unknown low-dimensional hybrid perovskite (R)-(−)-1-cyclohexylethylammonium/(S)-(+)-1 cyclohexylethylammonium) PbI 3 . Optical and electrical measurements characterize its semiconducting, ferroelectric, switchable pyroelectricity and switchable photoferroelectric properties. Temperature dependent structural, dielectric and transport measurements reveal a ferroelectric-paraelectric phase transition. Circular dichroism spectroscopy confirms its chirality. The development of a material with such a combination of these properties will facilitate the exploration of phenomena such as electric field and chiral enantiomer–dependent Rashba-Dresselhaus splitting and circular photogalvanic effects.more » « less
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Abstract Atomically thin transition metal dichalcogenides (TMDs), like MoS 2 with high carrier mobilities and tunable electron dispersions, are unique active material candidates for next generation opto-electronic devices. Previous studies on ion irradiation show great potential applications when applied to two-dimensional (2D) materials, yet have been limited to micron size exfoliated flakes or smaller. To demonstrate the scalability of this method for industrial applications, we report the application of relatively low power (50 keV) 4 He + ion irradiation towards tuning the optoelectronic properties of an epitaxially grown continuous film of MoS 2 at the wafer scale, and demonstrate that precise manipulation of atomistic defects can be achieved in TMD films using ion implanters. The effect of 4 He + ion fluence on the PL and Raman signatures of the irradiated film provides new insights into the type and concentration of defects formed in the MoS 2 lattice, which are quantified through ion beam analysis. PL and Raman spectroscopy indicate that point defects are generated without causing disruption to the underlying lattice structure of the 2D films and hence, this technique can prove to be an effective way to achieve defect-mediated control over the opto-electronic properties of MoS 2 and other 2D materials.more » « less
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Two-dimensional materials, such as transition metal dichalcogenides, have generated much interest due to their strain-sensitive electronic, optical, magnetic, superconducting, or topological properties. Harnessing control over their strain state may enable new technologies that operate by controlling these materials’ properties in devices such as straintronic transistors. Piezoelectric oxides have been proposed as one method to control such strain states on the device scale. However, there are few studies of how conformal 2D materials remain on oxide materials with respect to dynamic applications of the strain. Non-conformality may lead to non-optimal strain transfer. In this work, we explore this aspect of oxide-2D adhesion in the nanoscale switching of the substrate structural phase in thin 1T′-MoTe 2 attached to a mixed-phase thin-film BiFeO 3 (BFO), a multiferroic oxide with an electric-field induced structural phase transition that can generate mechanical strains of up to 2%. We observe that flake thickness impacts the conformality of 1T′-MoTe 2 to structural changes in BFO, but below four layers, 1T′-MoTe 2 fully conforms to the nanoscale BFO structural changes. The conformality of few-layer 1T′-MoTe 2 suggests that BFO is an excellent candidate for deterministic, nanoscale strain control for 2D materials.more » « less
- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1007/s12274-019-2524-3
