Abstract Microelectronic computers have encountered challenges in meeting all of today’s demands for information processing. Meeting these demands will require the development of unconventional computers employing alternative processing models and new device physics. Neural network models have come to dominate modern machine learning algorithms, and specialized electronic hardware has been developed to implement them more efficiently. A silicon photonic integration industry promises to bring manufacturing ecosystems normally reserved for microelectronics to photonics. Photonic devices have already found simple analog signal processing niches where electronics cannot provide sufficient bandwidth and reconfigurability. In order to solve more complex information processing problems, they will have to adopt a processing model that generalizes and scales. Neuromorphic photonics aims to map physical models of optoelectronic systems to abstract models of neural networks. It represents a new opportunity for machine information processing on sub-nanosecond timescales, with application to mathematical programming, intelligent radio frequency signal processing, and real-time control. The strategy of neuromorphic engineering is to externalize the risk of developing computational theory alongside hardware. The strategy of remaining compatible with silicon photonics externalizes the risk of platform development. In this perspective article, we provide a rationale for a neuromorphic photonics processor, envisioning its architecture and a compiler. We also discuss how it can be interfaced with a general purpose computer, i.e. a CPU, as a coprocessor to target specific applications. This paper is intended for a wide audience and provides a roadmap for expanding research in the direction of transforming neuromorphic photonics into a viable and useful candidate for accelerating neuromorphic computing.
more »
« less
Progress in neuromorphic photonics
Abstract As society’s appetite for information continues to grow, so does our need to process this information with increasing speed and versatility. Many believe that the one-size-fits-all solution of digital electronics is becoming a limiting factor in certain areas such as data links, cognitive radio, and ultrafast control. Analog photonic devices have found relatively simple signal processing niches where electronics can no longer provide sufficient speed and reconfigurability. Recently, the landscape for commercially manufacturable photonic chips has been changing rapidly and now promises to achieve economies of scale previously enjoyed solely by microelectronics. By bridging the mathematical prowess of artificial neural networks to the underlying physics of optoelectronic devices, neuromorphic photonics could breach new domains of information processing demanding significant complexity, low cost, and unmatched speed. In this article, we review the progress in neuromorphic photonics, focusing on photonic integrated devices. The challenges and design rules for optoelectronic instantiation of artificial neurons are presented. The proposed photonic architecture revolves around the processing network node composed of two parts: a nonlinear element and a network interface. We then survey excitable lasers in the recent literature as candidates for the nonlinear node and microring-resonator weight banks as the network interface. Finally, we compare metrics between neuromorphic electronics and neuromorphic photonics and discuss potential applications.
more »
« less
- Award ID(s):
- 1740262
- NSF-PAR ID:
- 10109923
- Date Published:
- Journal Name:
- Nanophotonics
- Volume:
- 6
- Issue:
- 3
- ISSN:
- 2192-8606
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
-
BACKGROUND Electromagnetic (EM) waves underpin modern society in profound ways. They are used to carry information, enabling broadcast radio and television, mobile telecommunications, and ubiquitous access to data networks through Wi-Fi and form the backbone of our modern broadband internet through optical fibers. In fundamental physics, EM waves serve as an invaluable tool to probe objects from cosmic to atomic scales. For example, the Laser Interferometer Gravitational-Wave Observatory and atomic clocks, which are some of the most precise human-made instruments in the world, rely on EM waves to reach unprecedented accuracies. This has motivated decades of research to develop coherent EM sources over broad spectral ranges with impressive results: Frequencies in the range of tens of gigahertz (radio and microwave regimes) can readily be generated by electronic oscillators. Resonant tunneling diodes enable the generation of millimeter (mm) and terahertz (THz) waves, which span from tens of gigahertz to a few terahertz. At even higher frequencies, up to the petahertz level, which are usually defined as optical frequencies, coherent waves can be generated by solid-state and gas lasers. However, these approaches often suffer from narrow spectral bandwidths, because they usually rely on well-defined energy states of specific materials, which results in a rather limited spectral coverage. To overcome this limitation, nonlinear frequency-mixing strategies have been developed. These approaches shift the complexity from the EM source to nonresonant-based material effects. Particularly in the optical regime, a wealth of materials exist that support effects that are suitable for frequency mixing. Over the past two decades, the idea of manipulating these materials to form guiding structures (waveguides) has provided improvements in efficiency, miniaturization, and production scale and cost and has been widely implemented for diverse applications. ADVANCES Lithium niobate, a crystal that was first grown in 1949, is a particularly attractive photonic material for frequency mixing because of its favorable material properties. Bulk lithium niobate crystals and weakly confining waveguides have been used for decades for accessing different parts of the EM spectrum, from gigahertz to petahertz frequencies. Now, this material is experiencing renewed interest owing to the commercial availability of thin-film lithium niobate (TFLN). This integrated photonic material platform enables tight mode confinement, which results in frequency-mixing efficiency improvements by orders of magnitude while at the same time offering additional degrees of freedom for engineering the optical properties by using approaches such as dispersion engineering. Importantly, the large refractive index contrast of TFLN enables, for the first time, the realization of lithium niobate–based photonic integrated circuits on a wafer scale. OUTLOOK The broad spectral coverage, ultralow power requirements, and flexibilities of lithium niobate photonics in EM wave generation provides a large toolset to explore new device functionalities. Furthermore, the adoption of lithium niobate–integrated photonics in foundries is a promising approach to miniaturize essential bench-top optical systems using wafer scale production. Heterogeneous integration of active materials with lithium niobate has the potential to create integrated photonic circuits with rich functionalities. Applications such as high-speed communications, scalable quantum computing, artificial intelligence and neuromorphic computing, and compact optical clocks for satellites and precision sensing are expected to particularly benefit from these advances and provide a wealth of opportunities for commercial exploration. Also, bulk crystals and weakly confining waveguides in lithium niobate are expected to keep playing a crucial role in the near future because of their advantages in high-power and loss-sensitive quantum optics applications. As such, lithium niobate photonics holds great promise for unlocking the EM spectrum and reshaping information technologies for our society in the future. Lithium niobate spectral coverage. The EM spectral range and processes for generating EM frequencies when using lithium niobate (LN) for frequency mixing. AO, acousto-optic; AOM, acousto-optic modulation; χ (2) , second-order nonlinearity; χ (3) , third-order nonlinearity; EO, electro-optic; EOM, electro-optic modulation; HHG, high-harmonic generation; IR, infrared; OFC, optical frequency comb; OPO, optical paramedic oscillator; OR, optical rectification; SCG, supercontinuum generation; SHG, second-harmonic generation; UV, ultraviolet.more » « less
-
Abstract Photonic neural networks (PNN) are a promising alternative to electronic GPUs to perform machine-learning tasks. The PNNs value proposition originates from i) near-zero energy consumption for vector matrix multiplication once trained, ii) 10-100 ps short interconnect delays, iii) weak required optical nonlinearity to be provided via fJ/bit efficient emerging electrooptic devices. Furthermore, photonic integrated circuits (PIC) offer high data bandwidth at low latency, with competitive footprints and synergies to microelectronics architectures such as foundry access. This talk discusses recent advances in photonic neuromorphic networks and provides a vision for photonic information processors. Details include, 1) a comparison of compute performance technologies with respect to compute efficiency (i.e. MAC/J) and compute speed (i.e. MAC/s), 2) a discussion of photonic neurons, i.e. perceptrons, 3) architectural network implementations, 4) a broadcast-and-weight protocol, 5) nonlinear activation functions provided via electro-optic modulation, and 6) experimental demonstrations of early-stage prototypes. The talk will open up answering why neural networks are of interest, and concludes with an application regime of PNN processors which reside in deep-learning, nonlinear optimization, and real-time processing.more » « less
-
more » « less
By mimicking biomimetic synaptic processes, the success of artificial intelligence (AI) has been astounding with various applications such as driving automation, big data analysis, and natural-language processing.[1-4] Due to a large quantity of data transmission between the separated memory unit and the logic unit, the classical computing system with von Neumann architecture consumes excessive energy and has a significant processing delay.[5] Furthermore, the speed difference between the two units also causes extra delay, which is referred to as the memory wall.[6, 7] To keep pace with the rapid growth of AI applications, enhanced hardware systems that particularly feature an energy-efficient and high-speed hardware system need to be secured. The novel neuromorphic computing system, an in-memory architecture with low power consumption, has been suggested as an alternative to the conventional system. Memristors with analog-type resistive switching behavior are a promising candidate for implementing the neuromorphic computing system since the devices can modulate the conductance with cycles that act as synaptic weights to process input signals and store information.[8, 9]
The memristor has sparked tremendous interest due to its simple two-terminal structure, including top electrode (TE), bottom electrode (BE), and an intermediate resistive switching (RS) layer. Many oxide materials, including HfO2, Ta2O5, and IGZO, have extensively been studied as an RS layer of memristors. Silicon dioxide (SiO2) features 3D structural conformity with the conventional CMOS technology and high wafer-scale homogeneity, which has benefited modern microelectronic devices as dielectric and/or passivation layers. Therefore, the use of SiO2as a memristor RS layer for neuromorphic computing is expected to be compatible with current Si technology with minimal processing and material-related complexities.
In this work, we proposed SiO2-based memristor and investigated switching behaviors metallized with different reduction potentials by applying pure Cu and Ag, and their alloys with varied ratios. Heavily doped p-type silicon was chosen as BE in order to exclude any effects of the BE ions on the memristor performance. We previously reported that the selection of TE is crucial for achieving a high memory window and stable switching performance. According to the study which compares the roles of Cu (switching stabilizer) and Ag (large switching window performer) TEs for oxide memristors, we have selected the TE materials and their alloys to engineer the SiO2-based memristor characteristics. The Ag TE leads to a larger memory window of the SiO2memristor, but the device shows relatively large variation and less reliability. On the other hand, the Cu TE device presents uniform gradual switching behavior which is in line with our previous report that Cu can be served as a stabilizer, but with small on/off ratio.[9] These distinct performances with Cu and Ag metallization leads us to utilize a Cu/Ag alloy as the TE. Various compositions of Cu/Ag were examined for the optimization of the memristor TEs. With a Cu/Ag alloying TE with optimized ratio, our SiO2based memristor demonstrates uniform switching behavior and memory window for analog switching applications. Also, it shows ideal potentiation and depression synaptic behavior under the positive/negative spikes (pulse train).
In conclusion, the SiO2memristors with different metallization were established. To tune the property of RS layer, the sputtering conditions of RS were varied. To investigate the influence of TE selections on switching performance of memristor, we integrated Cu, Ag and Cu/Ag alloy as TEs and compared the switch characteristics. Our encouraging results clearly demonstrate that SiO2with Cu/Ag is a promising memristor device with synaptic switching behavior in neuromorphic computing applications.
Acknowledgement This work was supported by the U.S. National Science Foundation (NSF) Award No. ECCS-1931088. S.L. and H.W.S. acknowledge the support from the Improvement of Measurement Standards and Technology for Mechanical Metrology (Grant No. 22011044) by KRISS.
References [1] Young
et al. ,IEEE Computational Intelligence Magazine, vol. 13, no. 3, pp. 55-75, 2018.[2] Hadsell
et al. ,Journal of Field Robotics, vol. 26, no. 2, pp. 120-144, 2009.[3] Najafabadi
et al. ,Journal of Big Data, vol. 2, no. 1, p. 1, 2015.[4] Zhao
et al. ,Applied Physics Reviews, vol. 7, no. 1, 2020.[5] Zidan
et al. ,Nature Electronics, vol. 1, no. 1, pp. 22-29, 2018.[6] Wulf
et al., SIGARCH Comput. Archit. News, vol. 23, no. 1, pp. 20–24, 1995.[7] Wilkes,
SIGARCH Comput. Archit. News, vol. 23, no. 4, pp. 4–6, 1995.[8] Ielmini
et al., Nature Electronics, vol. 1, no. 6, pp. 333-343, 2018.[9] Chang
et al., Nano Letters, vol. 10, no. 4, pp. 1297-1301, 2010.[10] Qin
et al. , Physica Status Solidi (RRL) - Rapid Research Letters, pssr.202200075R1, In press, 2022. -
more » « less
Abstract The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising material for active integrated photonics due to its high refractive index, wide bandgap, strong nonlinear properties, and large acousto‐optic figure of merit. This study demonstrates that silicon‐lattice‐matched boron‐doped GaP (BGaP), grown at the 12‐inch wafer scale, provides similar functionalities as GaP. BGaP optical resonators exhibit intrinsic quality factors exceeding 25,000 and 200,000 at visible and telecom wavelengths, respectively. It further demonstrates the electromechanical generation of low‐loss acoustic waves and an integrated acousto‐optic (AO) modulator. High‐resolution spatial and compositional mapping, combined with ab initio calculations, indicate two candidates for the excess optical loss in the visible band: the silicon‐GaP interface and boron dimers. These results demonstrate the promise of the BGaP material platform for the development of scalable AO technologies at telecom and provide potential pathways toward higher performance at shorter wavelengths.
- Free Publicly Accessible Full Text
-
Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1515/nanoph-2016-0139
