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Title: Band alignment of III-N, ZnO and II-IV-N2 semiconductors from the electron affinity rule
The natural band alignment between various II-IV-N$_2$ and III-N and ZnO semiconductors are determined by means of first-principles surface calculations of their electron affinities. While these ignore specific interface dipole formation and strain effects, they provide a first guidance to the construction of heterojunction devices involving this family of materials.
Authors:
;
Award ID(s):
1533957
Publication Date:
NSF-PAR ID:
10120735
Journal Name:
Journal of Physics D: Applied Physics
ISSN:
0022-3727
Sponsoring Org:
National Science Foundation
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