We present two algorithms to compute system-specific polarizabilities and dispersion coefficients such that required memory and computational time scale linearly with increasing number of atoms in the unit cell for large systems. The first algorithm computes the atom-in-material (AIM) static polarizability tensors, force-field polarizabilities, and C 6 , C 8 , C 9 , C 10 dispersion coefficients using the MCLF method. The second algorithm computes the AIM polarizability tensors and C 6 coefficients using the TS-SCS method. Linear-scaling computational cost is achieved using a dipole interaction cutoff length function combined with iterative methods that avoid large dense matrix multiplies and large matrix inversions. For MCLF, Richardson extrapolation of the screening increments is used. For TS-SCS, a failproof conjugate residual (FCR) algorithm is introduced that solves any linear equation system having Hermitian coefficients matrix. These algorithms have mathematically provable stable convergence that resists round-off errors. We parallelized these methods to provide rapid computation on multi-core computers. Excellent parallelization efficiencies were obtained, and adding parallel processors does not significantly increase memory requirements. This enables system-specific polarizabilities and dispersion coefficients to be readily computed for materials containing millions of atoms in the unit cell. The largest example studied herein is an ice crystal containing >2 million atoms in the unit cell. For this material, the FCR algorithm solved a linear equation system containing >6 million rows, 7.57 billion interacting atom pairs, 45.4 billion stored non-negligible matrix components used in each large matrix-vector multiplication, and ∼19 million unknowns per frequency point (>300 million total unknowns).
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New scaling relations to compute atom-in-material polarizabilities and dispersion coefficients: part 1. Theory and accuracy
Polarizabilities and London dispersion forces are important to many chemical processes. Force fields for classical atomistic simulations can be constructed using atom-in-material polarizabilities and C n ( n = 6, 8, 9, 10…) dispersion coefficients. This article addresses the key question of how to efficiently assign these parameters to constituent atoms in a material so that properties of the whole material are better reproduced. We develop a new set of scaling laws and computational algorithms (called MCLF) to do this in an accurate and computationally efficient manner across diverse material types. We introduce a conduction limit upper bound and m -scaling to describe the different behaviors of surface and buried atoms. We validate MCLF by comparing results to high-level benchmarks for isolated neutral and charged atoms, diverse diatomic molecules, various polyatomic molecules ( e.g. , polyacenes, fullerenes, and small organic and inorganic molecules), and dense solids (including metallic, covalent, and ionic). We also present results for the HIV reverse transcriptase enzyme complexed with an inhibitor molecule. MCLF provides the non-directionally screened polarizabilities required to construct force fields, the directionally-screened static polarizability tensor components and eigenvalues, and environmentally screened C 6 coefficients. Overall, MCLF has improved accuracy compared to the TS-SCS method. For TS-SCS, we compared charge partitioning methods and show DDEC6 partitioning yields more accurate results than Hirshfeld partitioning. MCLF also gives approximations for C 8 , C 9 , and C 10 dispersion coefficients and quantum Drude oscillator parameters. This method should find widespread applications to parameterize classical force fields and density functional theory (DFT) + dispersion methods.
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- Award ID(s):
- 1555376
- PAR ID:
- 10122309
- Date Published:
- Journal Name:
- RSC Advances
- Volume:
- 9
- Issue:
- 34
- ISSN:
- 2046-2069
- Page Range / eLocation ID:
- 19297 to 19324
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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