An electrically tunable nonlinear optical device working at near‐infrared wavelength is theoretically and experimentally demonstrated. Ultrahigh optical second‐order nonlinearity from titanium‐nitride‐based coupled metallic quantum wells can be electrically tuned by external electric field. Tunability of second‐order susceptibility
Whispering-gallery-mode optical microresonators have found impactful applications in various areas due to their remarkable properties such as ultra-high quality factor (Q-factor), small mode volume, and strong evanescent field. Among these applications, controllable tuning of the optical Q-factor is vital for on-chip optical modulation and various opto-electronic devices. Here, we report an experimental demonstration with a hybrid structure formed by an ultra-high-Q microtoroid cavity and a graphene monolayer. Thanks to the strong interaction of the evanescent wave with the graphene, the structure allows the Q-factor to be controllably varied in the range of 3.9 × 105∼ 6.2 × 107by engineering optical absorption via changing the gap distance in between. At the same time, a resonant wavelength shift of 32 pm was also observed. Besides, the scheme enables us to approach the critical coupling with a coupling depth of 99.6%. As potential applications in integrated opto-electronic devices, we further use the system to realize a tunable optical filter with tunable bandwidth from 116.5 MHz to 2.2 GHz as well as an optical switch with a maximal extinction ratio of 31 dB and response time of 21 ms.
more » « less- NSF-PAR ID:
- 10137319
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Optics Express
- Volume:
- 28
- Issue:
- 6
- ISSN:
- 1094-4087; OPEXFF
- Page Range / eLocation ID:
- Article No. 7906
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
-
more » « less
Abstract χ (2)reaches a 63% modulation depth with an average tunability of 10.5% per volt. In addition, electro‐optic modulation of second‐harmonic signal is presented by continuous tuning ofχ (2)over a long period of time with high stability. These results provide a new material platform with actively controllable strong nonlinearity for future nonlinear photonic systems, such as ultra‐compact opto‐electronic modulation devices and reconfigurable nonlinear metamaterials and metasurfaces. -
Reconfigurable metasurfaces have been pursued intensively in recent years for the ability to modulate the light after fabrication. However, the optical performances of these devices are limited by the efficiency, actuation response speed and mechanical control for reconfigurability. In this paper, we propose a fast tunable optical absorber based on the critical coupling of resonance mode to absorptive medium and the plasma dispersion effect of free carriers in semiconductor. The tunable absorber structure includes a single-layer or bi-layer silicon photonic crystal slab (PCS) to induce a high-Q optical resonance, a monolayer graphene as the absorption material, and bottom reflector to remove transmission. By modulating the refractive index of PCS via the plasma dispersion of the free carrier, the critical coupling condition is shifted in spectrum, and the device acquires tuning capability between perfect absorption and total reflection of the incident monochromatic light beam. Simulation results show that, with silicon index change of 0.015, the tunable absorption of light can achieve the reflection/absorption switching, and full range of reflection phase control is feasible in the over coupling region. The proposed reconfigurable structure has potential applications in remote sensing, free-space communications, LiDAR, and imaging.more » « less
-
more » « less
We report on the design, fabrication, and experimental characterization of photonic crystal (PhC) nanobeam cavities with the smallest footprint, largest intrinsic quality factor, and smallest mode volume to be demonstrated to date in a monolithic CMOS platform. Two types of cavities were designed, with opposite spatial mode symmetries. The opposite mode symmetry, combined with evanescent coupling, allows the nanobeam cavities to be used in reflectionless topologies, desirable in complex photonic integrated circuits (PICs). The devices were implemented and fabricated in a 45 nm monolithic electronics–photonics CMOS platform optimized for silicon photonics (GlobalFoundries 45CLO) and do not require any post-processing. Quality factors exceeding 100 000 were measured for both devices, the highest, to the best of our knowledge, among fully cladded PhC nanobeam cavities in any silicon-on-insulator (SOI) platform. Additionally, the ability of the cavities to confine light into small mode volumes, of the order of (
λ /n )3, was confirmed experimentally using near-field scanning optical microscopy (NSOM). These types of cavities are an important step toward realizing ultra-low energy active devices required for the next generation of integrated optical links beyond the current microring resonator-based links and other CMOS PICs. -
more » « less
Modulation-based control and locking of lasers, filters and other photonic components is a ubiquitous function across many applications that span the visible to infrared (IR), including atomic, molecular and optical (AMO), quantum sciences, fiber communications, metrology, and microwave photonics. Today, modulators used to realize these control functions consist of high-power bulk-optic components for tuning, sideband modulation, and phase and frequency shifting, while providing low optical insertion loss and operation from DC to 10s of MHz. In order to reduce the size, weight and cost of these applications and improve their scalability and reliability, modulation control functions need to be implemented in a low loss, wafer-scale CMOS-compatible photonic integration platform. The silicon nitride integration platform has been successful at realizing extremely low waveguide losses across the visible to infrared and components including high performance lasers, filters, resonators, stabilization cavities, and optical frequency combs. Yet, progress towards implementing low loss, low power modulators in the silicon nitride platform, while maintaining wafer-scale process compatibility has been limited. Here we report a significant advance in integration of a piezo-electric (PZT, lead zirconate titanate) actuated micro-ring modulation in a fully-planar, wafer-scale silicon nitride platform, that maintains low optical loss (0.03 dB/cm in a 625 µm resonator) at 1550 nm, with an order of magnitude increase in bandwidth (DC - 15 MHz 3-dB and DC - 25 MHz 6-dB) and order of magnitude lower power consumption of 20 nW improvement over prior PZT modulators. The modulator provides a >14 dB extinction ratio (ER) and 7.1 million quality-factor (Q) over the entire 4 GHz tuning range, a tuning efficiency of 162 MHz/V, and delivers the linearity required for control applications with 65.1 dB·Hz2/3and 73.8 dB·Hz2/3third-order intermodulation distortion (IMD3) spurious free dynamic range (SFDR) at 1 MHz and 10 MHz respectively. We demonstrate two control applications, laser stabilization in a Pound-Drever Hall (PDH) lock loop, reducing laser frequency noise by 40 dB, and as a laser carrier tracking filter. This PZT modulator design can be extended to the visible in the ultra-low loss silicon nitride platform with minor waveguide design changes. This integration of PZT modulation in the ultra-low loss silicon nitride waveguide platform enables modulator control functions in a wide range of visible to IR applications such as atomic and molecular transition locking for cooling, trapping and probing, controllable optical frequency combs, low-power external cavity tunable lasers, quantum computers, sensors and communications, atomic clocks, and tunable ultra-low linewidth lasers and ultra-low phase noise microwave synthesizers.
-
more » « less
Abstract Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally‐engineered emergent electronic properties, promising for electronic devices such as field‐effect transistors (FETs), when synthesized with atomic precision. Bottom‐up, on‐surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom‐up synthesized NPG for electronic devices has remained largely unexplored to date. Here, FETs based on bottom‐up synthesized chevron‐type NPG (C‐NPG), consisting of ordered arrays of nanopores defined by laterally connected chevron GNRs, are demonstrated. C‐NPG FETs show excellent switching performance with on–off ratios exceeding 104, which are tightly linked to the structural quality of C‐NPG. The devices operate as p‐type transistors in the air, while n‐type transport is observed when measured under vacuum, which is associated with reversible adsorption of gases or moisture. Theoretical analysis of charge transport in C‐NPG is also performed through electronic structure and transport calculations, which reveal strong conductance anisotropy effects in C‐NPG. The present study provides important insights into the design of high‐performance graphene‐based electronic devices where ballistic conductance and conduction anisotropy are achieved, which could be used in logic applications, and ultra‐sensitive sensors for chemical or biological detection.
