Reconfigurable metasurfaces have been pursued intensively in recent years for the ability to modulate the light after fabrication. However, the optical performances of these devices are limited by the efficiency, actuation response speed and mechanical control for reconfigurability. In this paper, we propose a fast tunable optical absorber based on the critical coupling of resonance mode to absorptive medium and the plasma dispersion effect of free carriers in semiconductor. The tunable absorber structure includes a single-layer or bi-layer silicon photonic crystal slab (PCS) to induce a high-Q optical resonance, a monolayer graphene as the absorption material, and bottom reflector to remove transmission. By modulating the refractive index of PCS via the plasma dispersion of the free carrier, the critical coupling condition is shifted in spectrum, and the device acquires tuning capability between perfect absorption and total reflection of the incident monochromatic light beam. Simulation results show that, with silicon index change of 0.015, the tunable absorption of light can achieve the reflection/absorption switching, and full range of reflection phase control is feasible in the over coupling region. The proposed reconfigurable structure has potential applications in remote sensing, free-space communications, LiDAR, and imaging. 
                        more » 
                        « less   
                    
                            
                            Controllable coupling between an ultra-high-Q microtoroid cavity and a graphene monolayer for optical filtering and switching applications
                        
                    
    
            Whispering-gallery-mode optical microresonators have found impactful applications in various areas due to their remarkable properties such as ultra-high quality factor (Q-factor), small mode volume, and strong evanescent field. Among these applications, controllable tuning of the optical Q-factor is vital for on-chip optical modulation and various opto-electronic devices. Here, we report an experimental demonstration with a hybrid structure formed by an ultra-high-Q microtoroid cavity and a graphene monolayer. Thanks to the strong interaction of the evanescent wave with the graphene, the structure allows the Q-factor to be controllably varied in the range of 3.9 × 105∼ 6.2 × 107by engineering optical absorption via changing the gap distance in between. At the same time, a resonant wavelength shift of 32 pm was also observed. Besides, the scheme enables us to approach the critical coupling with a coupling depth of 99.6%. As potential applications in integrated opto-electronic devices, we further use the system to realize a tunable optical filter with tunable bandwidth from 116.5 MHz to 2.2 GHz as well as an optical switch with a maximal extinction ratio of 31 dB and response time of 21 ms. 
        more » 
        « less   
        
    
    
                            - PAR ID:
 - 10137319
 
- Publisher / Repository:
 - Optical Society of America
 
- Date Published:
 
- Journal Name:
 - Optics Express
 
- Volume:
 - 28
 
- Issue:
 - 6
 
- ISSN:
 - 1094-4087; OPEXFF
 
- Format(s):
 - Medium: X Size: Article No. 7906
 
- Size(s):
 - Article No. 7906
 
- Sponsoring Org:
 - National Science Foundation
 
More Like this
- 
            
 - 
            Abstract Nanoporous graphene (NPG) can exhibit a uniform electronic band gap and rationally‐engineered emergent electronic properties, promising for electronic devices such as field‐effect transistors (FETs), when synthesized with atomic precision. Bottom‐up, on‐surface synthetic approaches developed for graphene nanoribbons (GNRs) now provide the necessary atomic precision in NPG formation to access these desirable properties. However, the potential of bottom‐up synthesized NPG for electronic devices has remained largely unexplored to date. Here, FETs based on bottom‐up synthesized chevron‐type NPG (C‐NPG), consisting of ordered arrays of nanopores defined by laterally connected chevron GNRs, are demonstrated. C‐NPG FETs show excellent switching performance with on–off ratios exceeding 104, which are tightly linked to the structural quality of C‐NPG. The devices operate as p‐type transistors in the air, while n‐type transport is observed when measured under vacuum, which is associated with reversible adsorption of gases or moisture. Theoretical analysis of charge transport in C‐NPG is also performed through electronic structure and transport calculations, which reveal strong conductance anisotropy effects in C‐NPG. The present study provides important insights into the design of high‐performance graphene‐based electronic devices where ballistic conductance and conduction anisotropy are achieved, which could be used in logic applications, and ultra‐sensitive sensors for chemical or biological detection.more » « less
 - 
            Semiconducting quantum dots (Q-dots) with strain-tunable electronic properties are good contenders for quantum computing devices, as they hold promise to exhibit a high level of photon entanglement. The optical and electronic properties of Q-dots vary with their size, shape, and makeup. An assortment of Q-dots has been studied, including ZnO, ZnS, CdSe and perovskites [1]. We have employed both Raman spectroscopy (to precisely determine their vibrational frequencies) and UV-VIS spectroscopy (to determine accurately their band gap energies). The electronic band structure and density of states of the ZnO and ZnS Q-dots have been investigated under strain using Density Functional Theory (DFT). The computer program SIESTA (Spanish Initiative for Electronic Simulations with Thousands of Atoms) was used to perform the DFT calculations via the linear combination of atomic orbitals (LCAO) method. The spin polarization of such systems may itself be used to encode information or influence the electronic properties of semiconducting Q-dots, which deserve special attention, as they have potential applications in lasers, photovoltaic cells, and imaging. In addition, we have investigated pristine and functionalized graphene nanoplatelets and metal oxides for sensing applications.more » « less
 - 
            Abstract The unusual properties of superconductivity in magic-angle twisted bilayer graphene (MATBG) have sparked considerable research interest1–13. However, despite the dedication of intensive experimental efforts and the proposal of several possible pairing mechanisms14–24, the origin of its superconductivity remains elusive. Here, by utilizing angle-resolved photoemission spectroscopy with micrometre spatial resolution, we reveal flat-band replicas in superconducting MATBG, where MATBG is unaligned with its hexagonal boron nitride substrate11. These replicas show uniform energy spacing, approximately 150 ± 15 meV apart, indicative of strong electron–boson coupling. Strikingly, these replicas are absent in non-superconducting twisted bilayer graphene (TBG) systems, either when MATBG is aligned to hexagonal boron nitride or when TBG deviates from the magic angle. Calculations suggest that the formation of these flat-band replicas in superconducting MATBG are attributed to the strong coupling between flat-band electrons and an optical phonon mode at the graphene K point, facilitated by intervalley scattering. These findings, although they do not necessarily put electron–phonon coupling as the main driving force for the superconductivity in MATBG, unravel the electronic structure inherent in superconducting MATBG, thereby providing crucial information for understanding the unusual electronic landscape from which its superconductivity is derived.more » « less
 - 
            Silicon carbide (SiC) has great potential for optomechanical applications due to its outstanding optical and mechanical properties. However, challenges associated with SiC nanofabrication have constrained its adoption in optomechanical devices, as embodied by the considerable optical loss or lack of integrated optical access in existing mechanical resonators. In this work, we overcome such challenges and demonstrate a low-loss, ultracompact optomechanical resonator in an integrated 4H-SiC-on-insulator (4H-SiCOI) photonic platform for the first time, to our knowledge. Based on a suspended 4.3-μm-radius microdisk, the SiC optomechanical resonator features low optical loss (<1 dB/cm), a high mechanical frequencyfmof 0.95×109 Hz, a mechanical quality factorQmof 1.92×104, and a footprint of <1×10−5 mm2. The correspondingfm·Qmproduct is estimated to be 1.82×1013 Hz, which is among the highest reported values of optomechanical cavities tested in ambient environment at room temperature. In addition, the strong optomechanical coupling in the SiC microdisk enables coherent regenerative optomechanical oscillations at a threshold optical dropped power of 14 μW, which also supports efficient harmonic generation at increased power levels. With such competitive performance, we envision a range of chip-scale optomechanical applications to be enabled by the low-loss 4H-SiCOI platform.more » « less
 
An official website of the United States government 
				
			