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We report a narrow-linewidth laser based on thin-film lithium tantalate (TFLT). The laser is composed of an InP reflective semiconductor optical amplifier gain chip hybrid integrated with a TFLT waveguide external cavity cladded with a silicon oxide extended Bragg grating. The single-frequency laser device achieves an on-chip output power of approximately 26 mW and an intrinsic Lorentzian linewidth of ~94 Hz. These results highlight the great potential of TFLT for integrated photonic laser applications, enabling high-coherence and high-power laser sources in a compact platform.
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III/V silicon hybrid laser based on a resonant Bragg structure
We demonstrate a laser tunable in intensity with gigahertz tuning speed based on a III/V reflective semiconductor optical amplifier (RSOA) coupled to a silicon photonic chip. The silicon chip contains a Bragg-based Fabry–Perot resonator to form a passive bandpass filter within its stopband to enable single-mode operation of the laser. We observe a side mode suppression ratio of 43 dB, linewidth of 790 kHz, and an optical output power of 1.65 mW around 1530 nm. We also investigate using a micro-ball lens as an alternative coupling method between the RSOA and the silicon chip.
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- PAR ID:
- 10147458
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Applied Optics
- Volume:
- 59
- Issue:
- 13
- ISSN:
- 1559-128X; APOPAI
- Format(s):
- Medium: X Size: Article No. 4158
- Size(s):
- Article No. 4158
- Sponsoring Org:
- National Science Foundation
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