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1. Potential Pulse Atomic Layer Deposition of Cu ₂ Se

   https://doi.org/10.1021/acs.chemmater.5b04211  

   Czerniawski, Justin M.; Perdue, Brian R.; Stickney, John L. (January 2016, Chemistry of Materials)
2. Effect of reactant dosing on selectivity during area-selective deposition of TiO ₂ via integrated atomic layer deposition and atomic layer etching

   https://doi.org/10.1063/5.0013552  

   Saare, Holger; Song, Seung Keun; Kim, Jung-Sik; Parsons, Gregory N. (September 2020, Journal of Applied Physics)
3. Electrodeposition of In ₂ Se ₃ Using Potential Pulse Atomic Layer Deposition

   https://doi.org/10.1021/acs.jpcc.6b00320  

   Czerniawski, Justin M.; Stickney, John L. (July 2016, The Journal of Physical Chemistry C)
4. Temperature‐Dependent Properties of Atomic Layer Deposition‐Grown TiO ₂ Thin Films

   https://doi.org/10.1002/admi.202400855  

   Chowdhary, Nimarta_Kaur; Gougousi, Theodosia (January 2025, Advanced Materials Interfaces)

   Abstract This study investigates the presence of titanium oxynitride bonds in titanium dioxide (TiO₂) thin films grown by atomic layer deposition (ALD) using tetrakis dimethyl amino titanium (TDMAT) and water at temperatures between 150 and 350 °C and its effect on the films’ optical and electrical properties. Compositional analysis using X‐ray photoelectron spectroscopy (XPS) reveals increased incorporation of oxynitride bonds as the process temperature increases. Furthermore, depth profile data demonstrates an increase in the abundance of this type of bonding from the surface to the bulk of the films. Ultraviolet‐visible spectroscopy (UV‐vis) measurements correlate increased visible light absorption for the films with elevated oxynitride incorporation. The optical constants (n, k) of the films show a pronounced dependence on the process temperature that is mirrored in the film conductivity. The detection of oxynitride bonding suggests a secondary reaction pathway in this well‐established ALD process chemistry, that may impact film properties. These findings indicate that the choice of process chemistry and conditions can be used to optimize film properties for optoelectronic applications. 

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5. Atomic Layer Deposition of Nanolayered Carbon Films

   https://doi.org/10.3390/c7040067  

   Xiao, Zhigang; Kisslinger, Kim; Monikandan, Rebhadevi (December 2021, C)

   In this paper, carbon thin films were grown using the plasma-enhanced atomic layer deposition (PE-ALD). Methane (CH4) was used as the carbon precursor to grow the carbon thin film. The grown film was analyzed by the high-resolution transmission electron micrograph (TEM), X-ray photoelectron spectroscopy (XPS) analysis, and Raman spectrum analysis. The analyses show that the PE-ALD-grown carbon film has an amorphous structure. It was found that the existence of defective sites (nanoscale holes or cracks) on the substrate of copper foil could facilitate the formation of nanolayered carbon films. The mechanism for the formation of nanolayered carbon film in the nanoscale holes was discussed. This finding could be used for the controlled growth of nanolayered carbon films or other two-dimensional nanomaterials while combining with modern nanopatterning techniques. 

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