GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
- Award ID(s):
- 1719875
- NSF-PAR ID:
- 10148259
- Date Published:
- Journal Name:
- IEEE Electron Device Letters
- Volume:
- 41
- Issue:
- 5
- ISSN:
- 0741-3106
- Page Range / eLocation ID:
- 689 to 692
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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