Li, Lei, Nomoto, Kazuki, Pan, Ming, Li, Wenshen, Hickman, Austin, Miller, Jeffrey, Lee, Kevin, Hu, Zongyang, Bader, Samuel James, Lee, Soo Min, Hwang, James C., Jena, Debdeep, and Xing, Huili Grace. GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz. Retrieved from https://par.nsf.gov/biblio/10148259. IEEE Electron Device Letters 41.5 Web. doi:10.1109/LED.2020.2984727.

Li, Lei, Nomoto, Kazuki, Pan, Ming, Li, Wenshen, Hickman, Austin, Miller, Jeffrey, Lee, Kevin, Hu, Zongyang, Bader, Samuel James, Lee, Soo Min, Hwang, James C., Jena, Debdeep, & Xing, Huili Grace. GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz. IEEE Electron Device Letters, 41 (5). Retrieved from https://par.nsf.gov/biblio/10148259. https://doi.org/10.1109/LED.2020.2984727

Li, Lei, Nomoto, Kazuki, Pan, Ming, Li, Wenshen, Hickman, Austin, Miller, Jeffrey, Lee, Kevin, Hu, Zongyang, Bader, Samuel James, Lee, Soo Min, Hwang, James C., Jena, Debdeep, and Xing, Huili Grace. "GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz". IEEE Electron Device Letters 41 (5). Country unknown/Code not available. https://doi.org/10.1109/LED.2020.2984727. https://par.nsf.gov/biblio/10148259.

@article{osti_10148259,
place = {Country unknown/Code not available}, title = {GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz}, url = {https://par.nsf.gov/biblio/10148259}, DOI = {10.1109/LED.2020.2984727}, abstractNote = {}, journal = {IEEE Electron Device Letters}, volume = {41}, number = {5}, author = {Li, Lei and Nomoto, Kazuki and Pan, Ming and Li, Wenshen and Hickman, Austin and Miller, Jeffrey and Lee, Kevin and Hu, Zongyang and Bader, Samuel James and Lee, Soo Min and Hwang, James C. and Jena, Debdeep and Xing, Huili Grace}, }