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Title: GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
Award ID(s):
1719875
NSF-PAR ID:
10148259
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
IEEE Electron Device Letters
Volume:
41
Issue:
5
ISSN:
0741-3106
Page Range / eLocation ID:
689 to 692
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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