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Title: GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
Authors:
; ; ; ; ; ; ; ; ; ; ; ;
Award ID(s):
1719875
Publication Date:
NSF-PAR ID:
10148259
Journal Name:
IEEE Electron Device Letters
Volume:
41
Issue:
5
Page Range or eLocation-ID:
689 to 692
ISSN:
0741-3106
Sponsoring Org:
National Science Foundation
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