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Abstract Previous band structure calculations predicted Ag3AuSe2to be a semiconductor with a band gap of approximately 1 eV. Here, we report single crystal growth of Ag3AuSe2and its transport and optical properties. Single crystals of Ag3AuSe2were synthesized by slow‐cooling from the melt, and grain sizes were confirmed to be greater than 2 mm using electron backscatter diffraction. Optical and transport measurements reveal that Ag3AuSe2is a highly resistive semiconductor with a band gap and activation energy around 0.3 eV. Our first‐principles calculations show that the experimentally determined band gap lies between the predicted band gaps from GGA and hybrid functionals. We predict band inversion to be possible by applying tensile strain. The sensitivity of the gap to Ag/Au ordering, chemical substitution, and heat treatment merit further investigation.
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Synthesis of TlBr and Tl 2 AgBr 3 Nanocrystals
Abstract There are only a few examples of nanocrystal synthesis with thallium (Tl). Here, we report the synthesis of uniform, ligand‐stabilized colloidal nanocrystals of TlBr and Tl2AgBr3nanocrystals with average diameter ranging between 10 and 20 nm. TlBr nanocrystals are made by hot injection of trimethylsilyl bromide (TMSBr) into solutions of oleylamine, oleic acid and octadecene with thallium (III) or thallium (I) acetate. Tl2AgBr3nanocrystals form when silver (I) acetate is included in the reaction. The TlBr nanocrystals have CsCl crystal structure with a direct band gap of 3.1 eV. The Tl2AgBr3nanocrystals have trigonal dolomite crystal structure with an indirect band gap of 3.1 eV. The TlBr nanocrystals made with thallium (III) were sufficiently uniform to assemble into face‐centered cubic (fcc) superlattices.
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- PAR ID:
- 10148916
- Publisher / Repository:
- Wiley Blackwell (John Wiley & Sons)
- Date Published:
- Journal Name:
- ChemNanoMat
- Volume:
- 6
- Issue:
- 5
- ISSN:
- 2199-692X
- Format(s):
- Medium: X Size: p. 790-796
- Size(s):
- p. 790-796
- Sponsoring Org:
- National Science Foundation
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