Variable-pressure electron-beam lithography (VP-EBL) employs an ambient gas at subatmospheric pressures to reduce charging during electron-beam lithography. VP-EBL has been previously shown to eliminate pattern distortion and provide improved resolution when patterning poly(methyl methacrylate) (PMMA) on insulating substrates. However, it remains unknown how water vapor affects the contrast and clearing dose nor has the effect of water vapor on the negative-tone behavior of PMMA been studied. In addition, water vapor has recently been shown to alter the radiation chemistry of the VP-EBL process for Teflon AF. Such changes in radiation chemistry have not been explored for PMMA. In this work, VP-EBL was conducted on conductive substrates to study the effect of water vapor on PMMA patterning separately from the effects of charge dissipation. In addition, both positive and negative-tone processes were studied to determine the effect of water vapor on both chain scission and cross-linking. The contrast of PMMA was found to improve significantly with increasing water vapor pressure for both positive and negative-tone patterning. The clearing dose for positive-tone patterning increases moderately with vapor pressure as would be expected for electron scattering in a gas. However, the onset set dose for negative-tone patterning increased dramatically with pressure revealing a more significant change in the exposure mechanism. X-ray photoelectron spectra and infrared transmission spectra indicate that water vapor only slightly alters the composition of exposed PMMA. Also, electron scattering in water vapor yielded a much larger clear region around negative-tone patterns. This effect could be useful for increasing the range of the developed region around cross-linked PMMA beyond the backscattered electron range. Thus, VP-EBL for PMMA introduces a new means of tuning clearing/onset dose and contrast, while allowing additional control over the size of the cleared region around negative-tone patterns.
In Situ Study of the Impact of Aberration-Corrected Electron-Beam Lithography on the Electronic Transport of Suspended Graphene Devices
The implementation of aberration-corrected electron beam lithography (AC-EBL) in a 200 keV scanning transmission electron microscope (STEM) is a novel technique that could be used for the fabrication of quantum devices based on 2D atomic crystals with single nanometer critical dimensions, allowing to observe more robust quantum effects. In this work we study electron beam sculpturing of nanostructures on suspended graphene field effect transistors using AC-EBL, focusing on the in situ characterization of the impact of electron beam exposure on device electronic transport quality. When AC-EBL is performed on a graphene channel (local exposure) or on the outside vicinity of a graphene channel (non-local exposure), the charge transport characteristics of graphene can be significantly affected due to charge doping and scattering. While the detrimental effect of non-local exposure can be largely removed by vigorous annealing, local-exposure induced damage is irreversible and cannot be fixed by annealing. We discuss the possible causes of the observed exposure effects. Our results provide guidance to the future development of high-energy electron beam lithography for nanomaterial device fabrication.
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- Award ID(s):
- 1836707
- NSF-PAR ID:
- 10152600
- Date Published:
- Journal Name:
- Nanomaterials
- Volume:
- 10
- Issue:
- 4
- ISSN:
- 2079-4991
- Page Range / eLocation ID:
- 666
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.3390/nano10040666
