We investigated the enhanced vapor responses and altered response ratios of a series of thiophene (co)polymers with oxygenated side chains (CH 2 OH, linear polyethylene glycol, and crown ether), including the novel poly(3-hydroxymethylthiophene) (PTOH) and other newly synthesized polymers. Hydroxymethyl-containing copolymers had higher mobility compared to poly(3-hexylthiophene) (P3HT). The larger crown ether moiety promotes transistor characteristics of P3HT while the smaller one impairs them. Incorporating different oxygen bearing functionalities increased responses of thiophene polymers to NO 2 , NH 3 , and acetone. For example a polyether side chain increases the NO 2 response sensitivity of copolymers of both P3HT and PTOH, but sensitivity towards gas analytes was more prominent for glycol-based functionalities rather than the crown ethers. PTOH is very sensitive to NO 2 and the response likely includes a contribution from conductive protons on the OH group. The lack of correlation among the rank-ordered gas sensitivities imparted by each functional group was found to be useful for designing a selective sensor array. We specifically showed high classification accuracy for all the polymer responses to NO 2 and acetone vapors, both of which gave increased device currents but with response ratios different enough to allow highly classifying discriminant functions to be derived.
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Enhanced and unconventional responses in chemiresistive sensing devices for nitrogen dioxide and ammonia from carboxylated alkylthiophene polymers
A carboxylated thiophene polymer-based chemiresistive device in a field-effect transistor (FET) configuration with unusual and enhanced responses to the widespread pollutants nitrogen dioxide (NO 2 ) and ammonia (NH 3 ) is described. The device based on a polymeric thiophene carboxylic acid showed a dramatic and superlinear increase in drain current ( I D ) of over 15 000% to a ramped exposure to 10 ppm NO 2 over several minutes, while its ethyl ester counterpart had significantly lower response. Devices incorporating either an ester or carboxylic acid displayed comparable and previously unreported increases in I D from 10 ppm ramped NH 3 exposure of 200–300%. Conventional poly(alkylthiophenes) showed the expected current decreases from similar NH 3 exposures. Using threshold voltage shifts in silicon transistors coupled to our recently reported remote gate (RG) platform with thiophene polymer coatings, we determined that two differing response mechanisms are associated with the two gas exposures. By calculating the charge density induced in the polymers by NO 2 exposure using the silicon transistor voltage shifts, we conclude that proton conduction contributes significantly to the high sensitivity of the carboxylic acid to NO 2 , in addition to doping that was observed for all four polymers. Furthermore, hydrogen bonding moieties of the carboxylic acid and ester may be able to physisorb NH 3 and thus alter the charge distribution, rearrange polymer chains, and/or create a proton transfer network leading to the I D increase that is the opposite of the response obtained from non-carboxylated thiophene polymers.
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- PAR ID:
- 10159552
- Date Published:
- Journal Name:
- Materials Horizons
- Volume:
- 7
- Issue:
- 5
- ISSN:
- 2051-6347
- Page Range / eLocation ID:
- 1358 to 1371
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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