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Title: Doping CdSe x Te 1-x /CdTe Graded Absorber Films with Arsenic for Thin-Film Photovoltaics
CdTe thin-film photovoltaics have demonstrated some of the lowest costs of electricity generation owing to its low material cost and ease of manufacturing. However, the full potential of polycrystalline CdTe photovoltaics can only be realized if the open-circuit voltage can be increased beyond 1 V Open-circuit voltage ~850-900 mV has been consistently observed for state-of-the-art polycrystalline CdTe solar cells. Open-circuit voltage of over 1V has been demonstrated for single crystal CdTe devices by doping with Group V elements. Therefore, this study is aimed at understanding behavior of polycrystalline CdTe devices with arsenic doping, its activation and process and performance optimization in order to overcome current voltage limitations in CdTe solar cells.  more » « less
Award ID(s):
1821526
PAR ID:
10173542
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ; ; ;
Date Published:
Journal Name:
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC)
Page Range / eLocation ID:
28 to 31
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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