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1. New Chalcogenide-Based Hole Transport Materials for Colloidal Quantum Dot Photovoltaics

   Rong, Eric; Bambini, Christianna; Lin, Yida; Lu, Chengchangfeng; Thon, Susanna M. (January 2021, Conference record of the IEEE Photovoltaic Specialists Conference)

   null (Ed.)

   Colloidal Quantum Dot (CQD) thin films are ad- vantageous for solar energy generation because of their low- cost and size-tunable, solution-processable nature. However, their efficiency in solar cells is limited in part by the performance of the hole transport layer (HTL). Through Solar Cell Capacitance Simulations and Transfer Matrix Method calculations, we show that significant photogeneration occurs in the standard HTL of ethanedithiol-passivated lead sulfide CQDs which is a problem due to the sub-optimal carrier mobility in this material. We report new HTLs composed of chalcogenide-based materials to address these issues, and demonstrate an absolute power conversion efficiency improvement of 1.35% in the best device. 

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2. Enhanced efficiency of graded-bandgap thin-film solar cells due to concentrated sunlight

   https://doi.org/10.1364/AO.442590  

   Ahmad, Faiz; Lakhtakia, Akhlesh; Monk, Peter_B (November 2021, Applied Optics)

   A systematic study was performed with a coupled optoelectronic model to examine the effect of the concentration of sunlight on the efficiencies of CIGS, CZTSSe and AlGaAs thin-film solar cells with a graded-bandgap absorber layer. Efficiencies of 34.6% for CIGS thin-film solar cells and 29.9% for CZTSSe thin-film solar cells are predicted with a concentration of 100 suns, the respective one-sun efficiencies being 27.7% and 21.7%. An efficiency of 36.7% is predicted for AlGaAs thin-film solar cells with a concentration of 60 suns, in comparison to 34.5% one-sun efficiency. Sunlight concentration does not affect the per-sun electron–hole-pair (EHP) generation rate but reduces the per-sun EHP recombination rate either near the front and back faces or in the graded-bandgap regions of the absorber layer, depending upon the semiconductor used for that layer, and this is the primary reason for the improvement in efficiency. Other effects include the enhancement of open-circuit voltage, which can be positively correlated to the higher short-circuit current density. Sunlight concentration can therefore play a significant role in enhancing the efficiency of thin-film solar cells. 

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3. Photovoltaic Characteristics of PERC-Like CdTe Solar Cells

   Roy, E.; Powell, K.; Yoon, H. (June 2023, Electronic Materials Conference)

   Rapid progress has been achieved in thin film CdTe solar cells, reaching a power conversion efficiency of 22.1 %. Researchers demonstrated a short-circuit current density (Jsc) of ≈ 31 mA/cm2 and a fill factor (FF) of ≈ 79 %, close to the theoretically calculated maximum values. However, the open-circuit voltage (Voc) remains below 0.9 V, much lower than the estimated Voc of 1.2 V. One strategy to improve the Voc is to implement a passivated back-contact on CdTe that can reduce the recombination by repelling minority carriers at the surface (i.e., electrons in CdTe). An aluminum oxide thin film (Al2O3) is an attractive candidate owing to its innate fixed negative charges (1012 ~ 1013 cm-2). Here, we use a patterned Al2O3 layer on CdTe to produce PERC-like CdTe solar cells (CdTe PERC). 

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4. Cadmium Telluride Cells on Silicon as Precursors for Two-Junction Tandem Cells

   Pandey, R.; Drayton, J.; Gregory, C.; Mohan Kumar, N.; Tyler, K.; King, R.; Sites, J. (January 2020, Conference record of the IEEE Photovoltaic Specialists Conference)

   Cadmium telluride and silicon are among the widely used absorber materials in photovoltaic industry. A tandem solar cell of these two can absorb significant portion of solar spectrum to yield high efficiency due to the added voltage of the two solar cells. On basis of low-cost production, a CdTe/Si cell has the potential to produce low-cost and high efficiency tandem PV. The CdTe top cell in a substrate configuration is essential to achieve a tandem between CdTe and Si. A functional CdS/CdTe solar cell in the substrate configuration was fabricated on a Si wafer. Current -Voltage measurements show a diode-like curve with lower J-V parameters compared to standard CdS/CdTe cells. SCAPS simulations were performed to identify possible reasons for poor performance and help improve the device performance. 

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5. Improving PbS Colloidal Quantum Dot Solar Cell Performance via Solution-Phase Engineering

   https://doi.org/10.1109/PVSC48320.2023.10359532  

   Gudi, Dhanvini; Chiu, Arlene; Kachman, Dana; Rong, Eric; Kamal, Serene; Lan, Yucheng; Thon, Susanna M (June 2023, IEEE)

   Lead Sulfide (PbS) colloidal quantum dots (CQDs) are promising materials for flexible and wearable photovoltaic devices and technologies due to their low cost, solution processibility and bandgap tunability with quantum dot size. However, PbS CQD solar cells have limitations on performance efficiency due to charge transport losses in the CQD layers and hole transport layer (HTL). This study pursues two promising techniques in parallel to address these challenges. Solution-phase annealing of the absorbing PbS-PbX2 (X = Br, I) layer can reduce charge transport losses by removing oleic acid and parasitic hydroxyl ligands. Additionally, optoelectronic simulations are used to show that HTL performance can be improved by the addition of a 2D transition metal dichalcogenide (TMD) layer to the PbS CQD-based HTL. We use solution-phase exfoliation to produce and incorporate 2D WSe2 nanoflakes into the HTL. We report a power conversion efficiency (PCE) increase of up to 3.4% for the solution-phase-annealed devices and up to 1% for the 2D WSe2 HTL augmented devices. A combination of these two techniques should result in high-performing PbS CQD solar cells, paving the way for further advancements in flexible photovoltaics. 

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