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Title: Improving the electrical performance of monolayer top-gated MoS 2 transistors by post bis(trifluoromethane) sulfonamide treatment
NSF-PAR ID:
10175788
Author(s) / Creator(s):
; ; ; ; ; ; ; ; ;
Publisher / Repository:
IOP Publishing
Date Published:
Journal Name:
Journal of Physics D: Applied Physics
Volume:
53
Issue:
41
ISSN:
0022-3727
Page Range / eLocation ID:
Article No. 415106
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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