Improving the electrical performance of monolayer top-gated MoS 2 transistors by post bis(trifluoromethane) sulfonamide treatment
- NSF-PAR ID:
- 10175788
- Publisher / Repository:
- IOP Publishing
- Date Published:
- Journal Name:
- Journal of Physics D: Applied Physics
- Volume:
- 53
- Issue:
- 41
- ISSN:
- 0022-3727
- Page Range / eLocation ID:
- Article No. 415106
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation