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1. Marginal metallic state at a fractional filling of ’8/5’ and ’4/3’ of Landau levels in the GaAs/AlGaAs 2D electron system

   https://doi.org/10.1038/s41598-021-94563-0  

   Mani, R. G. ; Wijewardena, U. K. ; Nanayakkara, T. R. ; Kriisa, Annika ; Reichl, C. ; Wegscheider, W. ( December 2021 , Scientific Reports)

   null (Ed.)

   Abstract A metallic state with a vanishing activation gap, at a filling factor $$\nu = 8/5$$ ν = 8 / 5 in the untilted specimen with $$n= 2 \times 10^{11} cm^{-2}$$ n = 2 × 10 11 c m - 2 , and at $$\nu = 4/3$$ ν = 4 / 3 at $$n=1.2 \times 10^{11} cm^{-2}$$ n = 1.2 × 10 11 c m - 2 under a $$\theta = 66^{0}$$ θ = 66 0 tilted magnetic field, is examined through a microwave photo-excited transport study of the GaAs/AlGaAs 2 dimensional electron system (2DES). The results presented here suggest, remarkably, that at the possible degeneracy point of states with different spin polarization, where the 8/5 or 4/3 FQHE vanish, there occurs a peculiar marginal metallic state that differs qualitatively from a quantum Hall insulating state and the usual quantum Hall metallic state. Such a marginal metallic state occurs most prominently at $$\nu =8/5$$ ν = 8 / 5 , and at $$\nu =4/3$$ ν = 4 / 3 under tilt as mentioned above, over the interval $$1 \le \nu \le 2$$ 1 ≤ ν ≤ 2 , that also includes the $$\nu = 3/2$$ ν = 3 / 2 state, which appears perceptibly gapped in the first instance. 

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2. Two-dimensional finite quantum Hall clusters of electrons with anisotropic features

   https://doi.org/10.1038/s41598-022-06093-y  

   Ciftja, Orion ( December 2022 , Scientific Reports)

   Abstract Low-dimensional nano and two-dimensional materials are of great interest to many disciplines and may have a lot of applications in fields such as electronics, optoelectronics, and photonics. One can create quantum Hall phases by applying a strong magnetic field perpendicular to a two-dimensional electron system. One characterizes the nature of the system by looking at magneto-transport data. There have been a few quantum phases seen in past experiments on GaAs/AlGaAs heterostructures that manifest anisotropic magnetoresistance, typically, in high Landau levels. In this work, we model the source of anisotropy as originating from an internal anisotropic interaction between electrons. We use this framework to study the possible anisotropic behavior of finite clusters of electrons at filling factor 1/6 of the lowest Landau level. 

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3. Black phosphorus photoconductive terahertz antenna: 3D modeling and experimental reference comparison

   https://doi.org/10.1364/JOSAB.419996  

   Batista, Jose Santos ; Churchill, Hugh O. H. ; El-Shenawee, Magda ( March 2021 , Journal of the Optical Society of America B)

   This paper presents a 3D model of a terahertz photoconductive antenna (PCA) using black phosphorus, an emerging 2D anisotropic material, as the semiconductor layer. This work aims at understanding the potential of black phosphorus (BP) to advance the signal generation and bandwidth of conventional terahertz (THz) PCAs. The COMSOL Multiphysics package, based on the finite element method, is utilized to model the 3D BP PCA emitter using four modules: the frequency domain RF module to solve Maxwell’s equations, the semiconductor module to calculate the photocurrent, the heat transfer in solids module to calculate the temperature variations, and the transient RF module to calculate the THz radiated electric field pulse. The proposed 3D model is computationally intensive where the PCA device includes thin layers of thicknesses ranging from nano- to microscale. The symmetry of the configuration was exploited by applying the perfect electric and magnetic boundary conditions to reduce the computational domain to only one quarter of the device in the RF module. The results showed that the temperature variation due to the conduction of current induced by the bias voltage increased by only 0.162 K. In addition, the electromagnetic power dissipation in the semiconductor due to the femtosecond laser source showed an increase in temperature by 0.441 K. The results show that the temperature variations caused the peak of the photocurrent to increase by$\sim <\#comment/>3.4\mathrm{\%<\#comment/>}$and$\sim <\#comment/>10\mathrm{\%<\#comment/>}$, respectively, under a maximum bias voltage of 1 V and average laser power of 1 mW. While simulating the active area of the antenna provided accurate results for the optical and semiconductor responses, simulating the thermal effect on the photocurrent requires a larger computational domain to avoid false rise in temperature. Finally, the simulated THz signal generation electric field pulse exhibits a trend in increasing the bandwidth of the proposed BP PCA compared with the measured pulse of a reference commercial LT-GaAs PCA. Enhancing signal generation and bandwidth will improve THz imaging and spectroscopy for biomedical and material characterization applications.

    

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4. Ultra‐High Speed, High‐Sensitivity Spin‐Cast MXene‐Semiconductor‐MXene Photodetectors

   https://doi.org/10.1002/adfm.202206942  

   Montazeri, Kiana ; Currie, Marc ; Barsoum, Michel W. ; Nabet, Bahram ( October 2022 , Advanced Functional Materials)

   A simple room‐temperature process of depositing MXene on a III‐V structure with embedded 2D electron gas (2DEG) is used, which results in a large area, , photodetector (PD) device that greatly outperforms vacuum deposited Ti/Au metal‐semiconductor‐metal (MSM) PD's. By co‐optimizing properties of 2D MXene contacts and the III‐V material heterojunctions, this device sets new operating records with responsivity up to 1.04 A W^‐1at low optical powers, corresponding to >230% internal quantum efficiency, dark current of 50 , >105.6‐dB dynamic range, and 25–150 ps response time, which improves the previous MXene‐Semiconductor‐MXene responsivity by >2.7 times and is 7 × 10³–−10⁶times faster compared to other MXene‐based PDs. This is achieved by enhancing the Schottky barrier height by forming a Van der Waals (vdW) heterojunction between a wide bandgap AlGaAs surface layer and spin coatedTi₃C₂T_zelectrodes. A layered architecture transports the optically generated electrons to a 2DEG channel at the GaAs/AlGaAs heterointerface, where they are rapidly collected. The landscaped electric field pushes the slow holes to an underlying low temperature‐grown GaAs (LT‐GaAs) region where they recombine. The proposed Schottky‐2DEG Photoconductor‐Schottky model for device operation shows how this device circumvents the canonical limitations of gain‐bandwidth product, and carrier transit time, while replacing the need for vacuum deposition of gold or other precious metals.

    

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5. Radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene

   https://doi.org/10.1038/s41598-019-43866-4  

   Mani, R. G. ; Kriisa, A. ; Munasinghe, R. ( May 2019 , Scientific Reports)

   We examine the characteristics of the microwave/mm-wave/terahertz radiation-induced magnetoresistance oscillations in monolayer and bilayer graphene and report that the oscillation frequency of the radiation-induced magnetoresistance oscillations in the massless, linearly dispersed monolayer graphene system should depend strongly both on the Fermi energy, and the radiation frequency, unlike in the case of the massive, parabolic, GaAs/AlGaAs 2D electron system, where the radiation-induced magnetoresistance oscillation frequency depends mainly on the radiation frequency. This possible dependence of the magnetoresistance oscillation frequency on the Fermi level at a fixed radiation frequency also suggests a sensitivity to the gate voltage in gated graphene, which suggests anin-situtunable photo-excitation response in monolayer graphene that could be useful for sensing applications. In sharp contrast to monolayer graphene, bilayer graphene is expected to show radiation-induced magnetoresistance oscillations more similar to the results observed in the GaAs/AlGaAs 2D system. Such expectations for the radiation-induced magnetoresistance oscillations are presented here to guide future experimental studies in both of these modern atomic layer material systems.

    

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