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Two-dimensional (2D) materials assembled into van der Waals (vdW) heterostructures contain unlimited combinations of mechanical, optical, and electrical properties that can be harnessed for potential device applications. Critically, these structures require control over interfacial adhesion for enabling their construction and have enough integrity to survive industrial fabrication processes upon their integration. Here, we promptly determine the adhesion quality of various exfoliated 2D materials on conventional SiO 2 /Si substrates using ultrasonic delamination threshold testing. This test allows us to quickly infer relative substrate adhesion based on the percent area of 2D flakes that survive a fixed time in an ultrasonic bath, allowing for control over process parameters that yield high or poor adhesion. We leverage this control of adhesion to optimize the vdW heterostructure assembly process, where we show that samples with high or low substrate adhesion relative to each other can be used selectively to construct high-throughput vdW stacks. Instead of tuning the adhesion of polymer stamps to 2D materials with constant 2D-substrate adhesion, we tune the 2D-substrate adhesion with constant stamp adhesion to 2D materials. The polymer stamps may be reused without any polymer melting steps, thus avoiding high temperatures (<120 °C) and allowing for high-throughput production. We show that this procedure can be used to create high-quality 2D twisted bilayer graphene on SiO 2 /Si, characterized with atomic force microscopy and Raman spectroscopic mapping, as well as low-angle twisted bilayer WSe 2 on h-BN/SiO 2 /Si, where we show direct real-space visualization of moiré reconstruction with tilt-angle dependent scanning electron microscopy.
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Chemical Vapor Growth of Silicon Phosphide Nanostructures
ABSTRACT In the search for chemically stable two-dimensional (2D) materials with high in-plane mobility, proper bandgap, and compatibility with vapor-based fabrication, van der Waals semiconductor SiP has become a potential candidate as a robust variation of black phosphorous. While bulk SiP crystals were synthesized in the 1970s, the vapor-based synthesis of SiP nanostructures or thin films is still absent. We here report the first chemical vapor growth of SiP nanostructures on SiO 2 /Si substrate. SiP islands with lateral size up to 20 μm and showing well-defined Raman signals were grown on SiO 2 /Si substrate or on SiP-containing concentric rings. The presence of SiP phase is confirmed by XRD. The formation of rings and islands is explained by a multiple coffee ring growth model where a dynamic fluctuation of droplet growth front induces the topography of concentric ring surfaces. This new growth method might shed light on the controlled growth of group IV-III high-mobility 2D semiconductors.
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- Award ID(s):
- 1706815
- PAR ID:
- 10179585
- Date Published:
- Journal Name:
- MRS Advances
- Volume:
- 5
- Issue:
- 31-32
- ISSN:
- 2059-8521
- Page Range / eLocation ID:
- 1653 to 1660
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1557/adv.2019.437
