skip to main content


Title: Electrically driven amplification of terahertz acoustic waves in graphene
Abstract

In graphene devices, the electronic drift velocity can easily exceed the speed of sound in the material at moderate current biases. Under these conditions, the electronic system can efficiently amplify acoustic phonons, leading to an exponential growth of sound waves in the direction of the carrier flow. Here, we show that such phonon amplification can significantly modify the electrical properties of graphene devices. We observe a superlinear growth of the resistivity in the direction of the carrier flow when the drift velocity exceeds the speed of sound — resulting in a sevenfold increase over a distance of 8 µm. The resistivity growth is observed at carrier densities away from the Dirac point and is enhanced at cryogenic temperatures. We develop a theoretical model for the resistivity growth due to the electrical amplification of acoustic phonons — reaching frequencies up to 2.2 THz — where the wavelength is controlled by gate-tunable transitions across the Fermi surface. These findings provide a route to on-chip high-frequency sound generation and detection in the THz frequency range.

 
more » « less
NSF-PAR ID:
10496438
Author(s) / Creator(s):
; ; ; ; ; ; ; ;
Publisher / Repository:
Nature Publishing Group
Date Published:
Journal Name:
Nature Communications
Volume:
15
Issue:
1
ISSN:
2041-1723
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Twisted bilayer graphene (TBG) exhibits extremely low Fermi velocities for electrons, with the speed of sound surpassing the Fermi velocity. This regime enables the use of TBG for amplifying vibrational waves of the lattice through stimulated emission, following the same principles of operation of free-electron lasers. Our work proposes a lasing mechanism relying on the slow-electron bands to produce a coherent beam of acoustic phonons. We propose a device based on undulated electrons in TBG, which we dub the phaser. The device generates phonon beams in a terahertz (THz) frequency range, which can then be used to produce THz electromagnetic radiation. The ability to generate coherent phonons in solids breaks new ground in controlling quantum memories, probing quantum states, realizing non-equilibrium phases of matter, and designing new types of THz optical devices. 
    more » « less
  2. Abstract

    Interfacial thermal resistance plays a crucial role in efficient heat dissipation in modern electronic devices. It is critical to understand the interfacial thermal transport from both experiments and underlying physics. This review is focused on the transient opto-thermal Raman-based techniques for measuring the interfacial thermal resistance between 2D materials and substrate. This transient idea eliminates the use of laser absorption and absolute temperature rise data, therefore provides some of the highest level measurement accuracy and physics understanding. Physical concepts and perspectives are given for the time-domain differential Raman (TD-Raman), frequency-resolved Raman (FR-Raman), energy transport state-resolved Raman (ET-Raman), frequency domain ET-Raman (FET-Raman), as well as laser flash Raman and dual-wavelength laser flash Raman techniques. The thermal nonequilibrium between optical and acoustic phonons, as well as hot carrier diffusion must be considered for extremely small domain characterization of interfacial thermal resistance. To have a better understanding of phonon transport across material interfaces, we introduce a new concept termed effective interface energy transmission velocity. It is very striking that many reported interfaces have an almost constant energy transmission velocity over a wide temperature range. This physics consideration is inspired by the thermal reffusivity theory, which is effective for analyzing structure-phonon scattering. We expect the effective interface energy transmission velocity to give an intrinsic picture of the transmission of energy carriers, unaltered by the influence of their capacity to carry heat.

     
    more » « less
  3. Abstract

    We report on scalable heterointegration of superconducting electrodes and epitaxial semiconductor quantum dots (QDs) on strong piezoelectric and optically nonlinear lithium niobate. The implemented processes combine the sputter-deposited thin film superconductor niobium nitride and III–V compound semiconductor membranes onto the host substrate. The superconducting thin film is employed as a zero-resistivity electrode material for a surface acoustic wave resonator with internal quality factorsQ17000representing a three-fold enhancement compared to identical devices with normal conducting electrodes. Superconducting operation of400MHzresonators is achieved to temperaturesT>7Kand electrical radio frequency powersPrf>+9dBm. Heterogeneously integrated single QDs couple to the resonant phononic field of the surface acoustic wave resonator operated in the superconducting regime. Position and frequency selective coupling mediated by deformation potential coupling is validated using time-integrated and time-resolved optical spectroscopy. Furthermore, acoustoelectric charge state control is achieved in a modified device geometry harnessing large piezoelectric fields inside the resonator. The hybrid QD—surface acoustic wave resonator can be scaled to higher operation frequencies and smaller mode volumes for quantum phase modulation and transduction between photons and phonons via the QD. Finally, the employed materials allow for the realization of other types of optoelectronic devices, including superconducting single photon detectors and integrated photonic and phononic circuits.

     
    more » « less
  4. Abstract

    Engineering of phonons, that is, collective lattice vibrations in crystals, is essential for manipulating physical properties of materials such as thermal transport, electron‐phonon interaction, confinement of lattice vibration, and optical polarization. Most approaches to phonon‐engineering have been largely limited to the high‐quality heterostructures of III–V compound semiconductors. Yet, artificial engineering of phonons in a variety of materials with functional properties, such as complex oxides, will yield unprecedented applications of coherent tunable phonons in future quantum acoustic devices. In this study, artificial engineering of phonons in the atomic‐scale SrRuO3/SrTiO3superlattices is demonstrated, wherein tunable phonon modes are observed via confocal Raman spectroscopy. In particular, the coherent superlattices led to the backfolding of acoustic phonon dispersion, resulting in zone‐folded acoustic phonons in the THz frequency domain. The frequencies can be largely tuned from 1 to 2 THz via atomic‐scale precision thickness control. In addition, a polar optical phonon originating from the local inversion symmetry breaking in the artificial oxide superlattices is observed, exhibiting emergent functionality. The approach of atomic‐scale heterostructuring of complex oxides will vastly expand material systems for quantum acoustic devices, especially with the viability of functionality integration.

     
    more » « less
  5. Understanding and controlling nonequilibrium electronic phenomena is an outstanding challenge in science and engineering. By electrically driving ultraclean graphene devices out of equilibrium, we observe an instability that is manifested as substantially enhanced current fluctuations and suppressed conductivity at microwave frequencies. Spatial mapping of the nonequilibrium current fluctuations using nanoscale magnetic field sensors reveals that the fluctuations grow exponentially along the direction of carrier flow. Our observations, including the dependence on density and temperature, are consistently explained by the emergence of an electron-phonon Cerenkov instability at supersonic drift velocities. These results offer the opportunity for tunable terahertz generation and active phononic devices based on two-dimensional materials. 
    more » « less