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In many commercially utilized ferroelectric materials, the motion of domain walls is an important contributor to the functional dielectric and piezoelectric responses. This paper compares the temperature dependence of domain wall motion for BaTiO3 ceramics with different grain sizes, point defect concentrations, and formulations. The grain boundaries act as significant pinning points for domain wall motion such that fine-grained materials show smaller extrinsic contributions to the properties below the Curie temperature and lower residual ferroelectric contributions immediately above the Curie temperature. Oxygen vacancy point defects make a modest change in the extrinsic contributions of undoped BaTiO3 ceramics. In formulated BaTiO3, extrinsic contributions to the dielectric response were suppressed over a wide temperature range. It is believed this is due to a combination of reduced grain size, the existence of a core-shell microstructure, and a reduction in domain wall continuity over the grain boundaries.
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The Nano-Scale Modified BaTiO3 Morphology Influence on Electronic Properties and Ceramics Fractal Nature Frontiers
The BaTiO3 ceramics applications based on electronic properties have very high gradient scientific and industrial-technological interests. Our scientific research has been based on nano BaTiO3 modified with Yttrium based organometallic salt (MOD-Y). The samples have been consolidated at a sintering temperature of 1350 °C. Within the study, the new frontiers for different electronic properties between the layers of BaTiO3 grains have been introduced. The research target was grain boundary investigations and the influence on dielectric properties. After scanning electron microscopy and dielectric measurements, it has been established that modified BaTiO3 samples with larger grains showed a better compact state that led to a higher dielectric constant value. DC bias stability was also investigated and showed a connection between the grain size and capacitance stability. Analyses of functions that could approximate experimental curves were successfully employed. Practical application of fractal corrections was performed, based on surface (αs) and pore size (αp) corrections, which resulted in obtainment of the relation between the capacitance and Curie temperature. Successful introduction of fractal corrections for capacitance-Curie temperature dependence for a set of experimental data is an important step towards further miniaturization of intergranular capacitors.
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- Award ID(s):
- 1829245
- PAR ID:
- 10180602
- Date Published:
- Journal Name:
- Applied Sciences
- Volume:
- 10
- Issue:
- 10
- ISSN:
- 2076-3417
- Page Range / eLocation ID:
- 3485
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript
- Journal Article:
- https://doi.org/10.3390/app10103485
