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Low temperature synthesis of high quality two-dimensional (2D) materials directly on flexible substrates remains a fundamental limitation towards scalable realization of robust flexible electronics possessing the unique physical properties of atomically thin structures. Herein, we describe room temperature sputtering of uniform, stoichiometric amorphous MoS 2 and subsequent large area (>6.25 cm 2 ) photonic crystallization of 5 nm 2H-MoS 2 films in air to enable direct, scalable fabrication of ultrathin 2D photodetectors on stretchable polydimethylsiloxane (PDMS) substrates. The lateral photodetector devices demonstrate an average responsivity of 2.52 μW A −1 and a minimum response time of 120 ms under 515.6 nm illumination. Additionally, the surface wrinkled, or buckled, PDMS substrate with conformal MoS 2 retained the photoconductive behavior at tensile strains as high as 5.72% and over 1000 stretching cycles. The results indicate that the photonic crystallization method provides a significant advancement in incorporating high quality semiconducting 2D materials applied directly on polymer substrates for wearable and flexible electronic systems.
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Inkjet-defined site-selective (IDSS) growth for controllable production of in-plane and out-of-plane MoS 2 device arrays
Along with the increasing interest in MoS 2 as a promising electronic material, there is also an increasing demand for nanofabrication technologies that are compatible with this material and other relevant layered materials. In addition, the development of scalable nanofabrication approaches capable of directly producing MoS 2 device arrays is an imperative task to speed up the design and commercialize various functional MoS 2 -based devices. The desired fabrication methods need to meet two critical requirements. First, they should minimize the involvement of resist-based lithography and plasma etching processes, which introduce unremovable contaminations to MoS 2 structures. Second, they should be able to produce MoS 2 structures with in-plane or out-of-plane edges in a controlled way, which is key to increase the usability of MoS 2 for various device applications. Here, we introduce an inkjet-defined site-selective (IDSS) method that meets these requirements. IDSS includes two main steps: (i) inkjet printing of microscale liquid droplets that define the designated sites for MoS 2 growth, and (ii) site-selective growth of MoS 2 at droplet-defined sites. Moreover, IDSS is capable of generating MoS 2 with different structures. Specifically, an IDSS process using deionized (DI) water droplets mainly produces in-plane MoS 2 features, whereas the processes using graphene ink droplets mainly produce out-of-plane MoS 2 features rich in exposed edges. Using out-of-plane MoS 2 structures, we have demonstrated the fabrication of miniaturized on-chip lithium ion batteries, which exhibit reversible lithiation/delithiation capacity. This IDSS method could be further expanded as a scalable and reliable nanomanufacturing method for generating miniaturized on-chip energy storage devices.
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- PAR ID:
- 10185133
- Date Published:
- Journal Name:
- Nanoscale
- Volume:
- 12
- Issue:
- 32
- ISSN:
- 2040-3364
- Page Range / eLocation ID:
- 16917 to 16927
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
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Accepted Manuscript1.0
- Journal Article:
- https://doi.org/10.1039/D0NR04012F
