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1. On-chip spin-orbit locking of quantum emitters in 2D materials for chiral emission

   https://doi.org/10.1364/OPTICA.463481  

   Ma, Yichen; Zhao, Haoqi; Liu, Na; Gao, Zihe; Mohajerani, Seyed_Sepehr; Xiao, Licheng; Hone, James; Feng, Liang; Strauf, Stefan (August 2022, Optica)

   Light carries both spin angular momentum (SAM) and orbital angular momentum (OAM), which can be used as potential degrees of freedom for quantum information processing. Quantum emitters are ideal candidates towards on-chip control and manipulation of the full SAM–OAM state space. Here, we show coupling of a spin-polarized quantum emitter in a monolayer ${\mathrm{W}\mathrm{S}\mathrm{e}}_2$with the whispering gallery mode of a ${\mathrm{S}\mathrm{i}}_3{\mathrm{N}}_4$ring resonator. The cavity mode carries a transverse SAM of $\mathrm{\sigma <\#comment/>}=\pm <\#comment/>1$in the evanescent regions, with the sign depending on the orbital power flow direction of the light. By tailoring the cavity–emitter interaction, we couple the intrinsic spin state of the quantum emitter to the SAM and propagation direction of the cavity mode, which leads to spin–orbit locking and subsequent chiral single-photon emission. Furthermore, by engineering how light is scattered from the WGM, we create a high-order Bessel beam which opens up the possibility to generate optical vortex carrying OAM states. 

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2. High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structure

   https://doi.org/10.1364/OL.400917  

   Velpula, Ravi_Teja; Jain, Barsha; Velpula, Swetha; Nguyen, Hoang-Duy; Nguyen, Hieu_Pham_Trung (September 2020, Optics Letters)

   In this Letter, the electron-blocking-layer (EBL)-free AlGaN ultraviolet (UV) light-emitting diodes (LEDs) using a strip-in-a-barrier structure have been proposed. The quantum barrier (QB) structures are systematically engineered by integrating a 1 nm intrinsic ${\mathrm{A}\mathrm{l}}_x{\mathrm{G}\mathrm{a}}_{(1-<\#comment/>x)}\mathrm{N}$strip into the middle of QBs. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher carrier radiative recombination. Our study shows that the proposed structure improves radiative recombination by $\sim <\#comment/>220\mathrm{\%<\#comment/>}$, reduces electron leakage by $\sim <\#comment/>11$times, and enhances optical power by $\sim <\#comment/>225\mathrm{\%<\#comment/>}$at 60 mA current injection compared to a conventional AlGaN EBL LED structure. Moreover, the EBL-free strip-in-a-barrier UV LED records the maximum internal quantum efficiency (IQE) of $\sim <\#comment/>61.5\mathrm{\%<\#comment/>}$which is $\sim <\#comment/>72\mathrm{\%<\#comment/>}$higher, and IQE droop is $\sim <\#comment/>12.4\mathrm{\%<\#comment/>}$, which is $\sim <\#comment/>333\mathrm{\%<\#comment/>}$less compared to the conventional AlGaN EBL LED structure at $\sim <\#comment/>284.5\mathrm{n}\mathrm{m}$wavelength. Hence, the proposed EBL-free AlGaN LED is the potential solution to enhance the optical power and produce highly efficient UV emitters. 

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3. Mid-IR spectroscopy of Er ³⁺ doped low-phonon CsCdCl ₃ and CsPbCl ₃ crystals

   https://doi.org/10.1364/JOSAB.470152  

   Brown, Ei_Ei; Fleischman, Zackery_D; McKay, Jason; Hommerich, Uwe; Kabir, Al_Amin; Riggins, Jazmine; Trivedi, Sudhir; Dubinskii, Mark (September 2022, Journal of the Optical Society of America B)

   The mid-IR spectroscopic properties of ${\mathrm{E}\mathrm{r}}^{3+}$doped low-phonon ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$crystals grown by the Bridgman technique have been investigated. Using optical excitations at $\sim <\#comment/>800\mathrm{n}\mathrm{m}$and $\sim <\#comment/>660\mathrm{n}\mathrm{m}$, both crystals exhibited IR emissions at $\sim <\#comment/>1.55$, $\sim <\#comment/>2.75$, $\sim <\#comment/>3.5$, and $\sim <\#comment/>4.5\text{µ<\#comment/>}\mathrm{m}$at room temperature. The mid-IR emission at 4.5 µm, originating from the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition, showed a long emission lifetime of $\sim <\#comment/>11.6\mathrm{m}\mathrm{s}$for ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$, whereas ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$exhibited a shorter lifetime of $\sim <\#comment/>1.8\mathrm{m}\mathrm{s}$. The measured emission lifetimes of the ${}^4{\mathrm{I}}_{9/2}$state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the ${}^4{\mathrm{I}}_{9/2}\to <\#comment/>{}^4{\mathrm{I}}_{11/2}$transition in ${\mathrm{E}\mathrm{r}}^{3+}$doped ${\mathrm{C}\mathrm{s}\mathrm{C}\mathrm{d}\mathrm{C}\mathrm{l}}_3$and ${\mathrm{C}\mathrm{s}\mathrm{P}\mathrm{b}\mathrm{C}\mathrm{l}}_3$were determined to be $\sim <\#comment/>0.14\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$and $\sim <\#comment/>0.41\times <\#comment/>{10}^{-<\#comment/>20}{\mathrm{c}\mathrm{m}}^2$, respectively. The results of Judd–Ofelt analysis are presented and discussed. 

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4. Growth and characterization of Sc ₂ O ₃ doped Ta ₂ O ₅ thin films

   https://doi.org/10.1364/AO.59.00A106  

   Fazio, Mariana; Yang, Le; Markosyan, Ashot; Bassiri, Riccardo; Fejer, Martin_M; Menoni, Carmen_S (December 2019, Applied Optics)

   We present the optical and structural characterization of films of ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$, ${\mathrm{S}\mathrm{c}}_2{\mathrm{O}}_3$, and ${\mathrm{S}\mathrm{c}}_2{\mathrm{O}}_3$doped ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$with a cation ratio around 0.1 grown by reactive sputtering. The addition of ${\mathrm{S}\mathrm{c}}_2{\mathrm{O}}_3$as a dopant induces the formation of tantalum suboxide due to the “oxygen getter” property of scandium. The presence of tantalum suboxide greatly affects the optical properties of the coating, resulting in higher absorption loss at $\mathrm{\lambda <\#comment/>}=1064\mathrm{n}\mathrm{m}$. The refractive index and optical band gap of the mixed film do not correspond to those of a mixture of ${\mathrm{T}\mathrm{a}}_2{\mathrm{O}}_5$and ${\mathrm{S}\mathrm{c}}_2{\mathrm{O}}_3$, given the profound structural modifications induced by the dopant. 

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5. High-performance nanowire ultraviolet light-emitting diodes with potassium hydroxide and ammonium sulfide surface passivation

   https://doi.org/10.1364/AO.400877  

   Bui, Ha_Quoc_Thang; Velpula, Ravi_Teja; Jian, Barsha; Philip, Moab_Rajan; Tong, Hien_Duy; Lenka, Trupti_Rajan; Nguyen, Hieu_Pham_Trung (August 2020, Applied Optics)

   Potassium hydroxide (KOH) and ammonium sulfide $({\mathrm{N}\mathrm{H}}_4{)}_2{\mathrm{S}}_x$have been used as a surface passivation treatment to improve the electrical and optical performance of AlGaN nanowire ultraviolet (UV) light-emitting diodes (LEDs). Enhancements in photoluminescence at 335 nm (49%), optical output power (65%), and electroluminescence (83%), with respect to the as-grown nanowire LED are recorded for the AlGaN nanowire UV LEDs with surface passivation. These enhancements are attributed to the reduced nonradiative recombination on the nanowire surfaces. This study provides a potential surface passivation approach to produce high-power AlGaN nanowire LEDs operating in the UV spectrum. 

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