The mid-IR spectroscopic properties of doped low-phonon and crystals grown by the Bridgman technique have been investigated. Using optical excitations at and , both crystals exhibited IR emissions at , , , and at room temperature. The mid-IR emission at 4.5 µm, originating from the transition, showed a long emission lifetime of for doped , whereas doped exhibited a shorter lifetime of . The measured emission lifetimes of the state were nearly independent of the temperature, indicating a negligibly small nonradiative decay rate through multiphonon relaxation, as predicted by the energy-gap law for low-maximum-phonon energy hosts. The room temperature stimulated emission cross sections for the transition in doped and were determined to be and , respectively. The results of Judd–Ofelt analysis are presented and discussed. 
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                            Growth and characterization of Sc 2 O 3 doped Ta 2 O 5 thin films
                        
                    
    
            We present the optical and structural characterization of films of , , and doped with a cation ratio around 0.1 grown by reactive sputtering. The addition of as a dopant induces the formation of tantalum suboxide due to the “oxygen getter” property of scandium. The presence of tantalum suboxide greatly affects the optical properties of the coating, resulting in higher absorption loss at . The refractive index and optical band gap of the mixed film do not correspond to those of a mixture of and , given the profound structural modifications induced by the dopant. 
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                            - PAR ID:
- 10127420
- Publisher / Repository:
- Optical Society of America
- Date Published:
- Journal Name:
- Applied Optics
- Volume:
- 59
- Issue:
- 5
- ISSN:
- 1559-128X; APOPAI
- Format(s):
- Medium: X Size: Article No. A106
- Size(s):
- Article No. A106
- Sponsoring Org:
- National Science Foundation
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