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1. (Sub)millimetre dust polarization of protoplanetary discs from scattering by large millimetre-sized irregular grains

   https://doi.org/10.1093/mnras/stad173  

   Lin, Zhe-Yu Daniel ; Li, Zhi-Yun ; Yang, Haifeng ; Muñoz, Olga ; Looney, Leslie ; Stephens, Ian ; Hull, Charles L. H. ; Fernández-López, Manuel ; Harrison, Rachel ( January 2023 , Monthly Notices of the Royal Astronomical Society)

   The size of dust grains, a, is key to the physical and chemical processes in circumstellar discs, but observational constraints of grain size remain challenging. (Sub)millimetre continuum observations often show a per cent-level polarization parallel to the disc minor axis, which is generally attributed to scattering by ${\sim}100\, \mu{\rm m}$-sized spherical grains (with a size parameter x ≡ 2$\pi$a/λ < 1, where λ is the wavelength). Larger spherical grains (with x greater than unity) would produce opposite polarization direction. However, the inferred size is in tension with the opacity index β that points to larger mm/cm-sized grains. We investigate the scattering-produced polarization by large irregular grains with a range of x greater than unity with optical properties obtained from laboratory experiments. Using the radiation transfer code, RADMC-3D, we find that large irregular grains still produce polarization parallel to the disc minor axis. If the original forsterite refractive index in the optical is adopted, then all samples can produce the typically observed level of polarization. Accounting for the more commonly adopted refractive index using the DSHARP dust model, only grains with x of several (corresponding to ∼mm-sized grains) can reach the same polarization level. Our results suggest that grains in discs can have sizes in the millimetre regime, which may alleviate the tension between the grain sizes inferred from scattering and other means. Additionally, if large irregular grains are not settled to the mid-plane, their strong forward scattering can produce asymmetries between the near and far side of an inclined disc, which can be used to infer their presence.

    

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2. Early Planet Formation in Embedded Disks (eDisk). II. Limited Dust Settling and Prominent Snow Surfaces in the Edge-on Class I Disk IRAS 04302+2247

   https://doi.org/10.3847/1538-4357/acd5c9  

   Lin, Zhe-Yu Daniel ; Li, Zhi-Yun ; Tobin, John J. ; Ohashi, Nagayoshi ; Jørgensen, Jes Kristian ; Looney, Leslie W. ; Aso, Yusuke ; Takakuwa, Shigehisa ; Aikawa, Yuri ; van’t Hoff, Merel L. R. ; et al ( June 2023 , The Astrophysical Journal)

   While dust disks around optically visible, Class II protostars are found to be vertically thin, when and how dust settles to the midplane are unclear. As part of the Atacama Large Millimeter/submillimeter Array large program, Early Planet Formation in Embedded Disks, we analyze the edge-on, embedded, Class I protostar IRAS 04302+2247, also nicknamed the “Butterfly Star.” With a resolution of 0.″05 (8 au), the 1.3 mm continuum shows an asymmetry along the minor axis that is evidence of an optically thick and geometrically thick disk viewed nearly edge-on. There is no evidence of rings and gaps, which could be due to the lack of radial substructure or the highly inclined and optically thick view. With 0.″1 (16 au) resolution, we resolve the 2D snow surfaces, i.e., the boundary region between freeze-out and sublimation, for¹²COJ= 2–1,¹³COJ= 2–1, C¹⁸OJ= 2–1,H₂COJ= 3_0,3–2_0,2, and SOJ= 6₅–5₄, and constrain the CO midplane snow line to ∼130 au. We find Keplerian rotation around a protostar of 1.6 ± 0.4M_⊙using C¹⁸O. Through forward ray-tracing using RADMC-3D, we find that the dust scale height is ∼6 au at a radius of 100 au from the central star and is comparable to the gas pressure scale height. The results suggest that the dust of this Class I source has yet to vertically settle significantly.

    

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3. OMC-1 dust polarization in ALMA Band 7: diagnosing grain alignment mechanisms in the vicinity of Orion Source I

   https://doi.org/10.1093/mnras/stab608  

   Pattle, Kate ; Lai, Shih-Ping ; Wright, Melvyn ; Coudé, Simon ; Plambeck, Richard ; Hoang, Thiem ; Tang, Ya-Wen ; Bastien, Pierre ; Eswaraiah, Chakali ; Furuya, Ray S ; et al ( March 2021 , Monthly Notices of the Royal Astronomical Society)

   ABSTRACT We present ALMA Band 7 polarization observations of the OMC-1 region of the Orion molecular cloud. We find that the polarization pattern observed in the region is likely to have been significantly altered by the radiation field of the >104 L⊙ high-mass protostar Orion Source I. In the protostar’s optically thick disc, polarization is likely to arise from dust self-scattering. In material to the south of Source I – previously identified as a region of ‘anomalous’ polarization emission – we observe a polarization geometry concentric around Source I. We demonstrate that Source I’s extreme luminosity may be sufficient to make the radiative precession time-scale shorter than the Larmor time-scale for moderately large grains ($\gt 0.005\!-\!0.1\, \mu$m), causing them to precess around the radiation anisotropy vector (k-RATs) rather than the magnetic field direction (B-RATs). This requires relatively unobscured emission from Source I, supporting the hypothesis that emission in this region arises from the cavity wall of the Source I outflow. This is one of the first times that evidence for k-RAT alignment has been found outside of a protostellar disc or AGB star envelope. Alternatively, the grains may remain aligned by B-RATs and trace gas infall on to the Main Ridge. Elsewhere, we largely find the magnetic field geometry to be radial around the BN/KL explosion centre, consistent with previous observations. However, in the Main Ridge, the magnetic field geometry appears to remain consistent with the larger-scale magnetic field, perhaps indicative of the ability of the dense Ridge to resist disruption by the BN/KL explosion. 

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4. Annular substructures in the transition disks around LkCa 15 and J1610

   https://doi.org/10.1051/0004-6361/202038027  

   Facchini, S. ; Benisty, M. ; Bae, J. ; Loomis, R. ; Perez, L. ; Ansdell, M. ; Mayama, S. ; Pinilla, P. ; Teague, R. ; Isella, A. ; et al ( July 2020 , Astronomy & Astrophysics)

   We present high-resolution millimeter continuum ALMA observations of the disks around the T Tauri stars LkCa 15 and 2MASS J16100501-2132318 (hereafter, J1610). These transition disks host dust-depleted inner regions, which have possibly been carved by massive planets, and they are of prime interest to the study of the imprints of planet-disk interactions. While at moderate angular resolution, they appear as a broad ring surrounding a cavity, the continuum emission resolves into multiple rings at a resolution of ~60 × 40 mas (~7.5 au for LkCa 15, ~6 au for J1610) and ~7 μ Jy beam −1 rms at 1.3 mm. In addition to a broad extended component, LkCa 15 and J1610 host three and two narrow rings, respectively, with two bright rings in LkCa 15 being radially resolved. LkCa 15 possibly hosts another faint ring close to the outer edge of the mm emission. The rings look marginally optically thick, with peak optical depths of ~0.5 (neglecting scattering), in agreement with high angular resolution observations of full disks. We performed hydrodynamical simulations with an embedded, sub-Jovian-mass planet and show that the observed multi-ringed substructure can be qualitatively explained as the outcome of the planet-disk interaction. We note, however, that the choice of the disk cooling timescale alone can significantly impact the resulting gas and dust distributions around the planet, leading to different numbers of rings and gaps and different spacings between them. We propose that the massive outer disk regions of transition disks are favorable places for planetesimals, and possibly second-generation planet formation of objects with a lower mass than the planets carving the inner cavity (typically few M Jup ), and that the annular substructures observed in LkCa 15 and J1610 may be indicative of planetary core formation within dust-rich pressure traps. Current observations are compatible with other mechanisms contributing to the origin of the observed substructures, in particular with regard to narrow rings generated (or facilitated) at the edge of the CO and N 2 snowlines. 

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5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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