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Title: Validating scattering-induced (sub)millimetre disc polarization through the spectral index, wavelength-dependent polarization pattern, and polarization spectrum: the case of HD 163296
ABSTRACT A number of young circumstellar discs show strikingly ordered (sub)millimetre polarization orientations along the minor axis, which is strong evidence for polarization due to scattering by ∼0.1 mm-sized grains. To test this mechanism further, we model the ALMA dust continuum and polarization data of HD 163296 using radmc-3d. We find that scattering by grains with a maximum size of 90  μm simultaneously reproduces the polarization observed at Band 7 and the unusually low spectral index (α ∼ 1.5) between Bands 7 and 6 in the optically thick inner disc as a result of more efficient scattering at the shorter wavelength. The low spectral index of ∼2.5 inferred for the optically thin gaps is reproduced by the same grains, as a result of telescope beam averaging of the gaps (with an intrinsic α ∼ 4) and their adjacent optically thick rings (where α ≲ 2). The tension between the grain sizes inferred from polarization and spectral index disappears because the low α values do not require large mm-sized grains. In addition, the polarization fraction has a unique azimuthal variation: higher along the major axis than the minor axis in the gaps, but vice versa in the rings. We find a rapidly more » declining polarization spectrum (with p ∝ λ−3 approximately) in the gaps, which becomes flattened or even inverted towards short wavelengths in the optically thick rings. These contrasting behaviours in the rings and gaps provide further tests for scattering-induced polarization via resolved multiwavelength observations. « less
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Award ID(s):
1716259 1910364
Publication Date:
Journal Name:
Monthly Notices of the Royal Astronomical Society
Page Range or eLocation-ID:
169 to 181
Sponsoring Org:
National Science Foundation
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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
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