More Like this

1. Comparison of thermoelectric properties of nanostructured Mg 2 Si, FeSi 2 , SiGe, and nanocomposites of SiGe–Mg 2 Si, SiGe–FeSi 2

   https://doi.org/10.1063/1.4966138  

   Nozariasbmarz, Amin ; Roy, Palash ; Zamanipour, Zahra ; Dycus, J. Houston ; Cabral, Matthew J. ; LeBeau, James M. ; Krasinski, Jerzy S. ; Vashaee, Daryoosh ( October 2016 , APL Materials)
2. Unusual anisotropy of inplane field magnetoresistance in ultra-high mobility SiGe/Si/SiGe quantum wells

   https://doi.org/10.1063/1.4991545  

   Melnikov, M. Yu. ; Dolgopolov, V. T. ; Shashkin, A. A. ; Huang, S.-H. ; Liu, C. W. ; Kravchenko, S. V. ( December 2017 , Journal of Applied Physics)
3. Spin independence of the strongly enhanced effective mass in ultra-clean SiGe/Si/SiGe two-dimensional electron system

   https://doi.org/10.1038/s41598-023-44580-y  

   Melnikov, M. Yu. ; Shakirov, A. A. ; Shashkin, A. A. ; Huang, S. H. ; Liu, C. W. ; Kravchenko, S. V. ( October 2023 , Scientific Reports)

   The effective mass at the Fermi level is measured in the strongly interacting two-dimensional (2D) electron system in ultra-clean SiGe/Si/SiGe quantum wells in the low-temperature limit in tilted magnetic fields. At low electron densities, the effective mass is found to be strongly enhanced and independent of the degree of spin polarization, which indicates that the mass enhancement is not related to the electrons’ spins. The observed effect turns out to be universal for silicon-based 2D electron systems, regardless of random potential, and cannot be explained by existing theories.

    

   more » « less
4. Quantum phase transition in ultrahigh mobility SiGe/Si/SiGe two-dimensional electron system

   https://doi.org/10.1103/PhysRevB.99.081106  

   Melnikov, M. Yu. ; Shashkin, A. A. ; Dolgopolov, V. T. ; Zhu, Amy Y. X. ; Kravchenko, S. V. ; Huang, S. -H. ; Liu, C. W. ( February 2019 , Physical Review B)
5. Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

   https://doi.org/10.1038/s41467-022-28519-x  

   Connors, Elliot J. ; Nelson, J. ; Edge, Lisa F. ; Nichol, John M. ( December 2022 , Nature Communications)

   Abstract Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 π pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots. 

   more » « less