skip to main content
US FlagAn official website of the United States government
dot gov icon
Official websites use .gov
A .gov website belongs to an official government organization in the United States.
https lock icon
Secure .gov websites use HTTPS
A lock ( lock ) or https:// means you've safely connected to the .gov website. Share sensitive information only on official, secure websites.


Title: Characterization, stability, and application of domain walls in flexible mechanical metamaterials
Domain walls, commonly occurring at the interface of different phases in solid-state materials, have recently been harnessed at the structural scale to enable additional modes of functionality. Here, we combine experimental, numerical, and theoretical tools to investigate the domain walls emerging upon uniaxial compression in a mechanical metamaterial based on the rotating-squares mechanism. We first show that these interfaces can be generated and controlled by carefully arranging a few phase-inducing defects. We establish an analytical model to capture the evolution of the domain walls as a function of the applied deformation. We then employ this model as a guideline to realize interfaces of complex shape. Finally, we show that the engineered domain walls modify the global response of the metamaterial and can be effectively exploited to tune its stiffness as well as to guide the propagation of elastic waves.  more » « less
Award ID(s):
1741685
PAR ID:
10204974
Author(s) / Creator(s):
; ; ; ;
Publisher / Repository:
Proceedings of the National Academy of Sciences
Date Published:
Journal Name:
Proceedings of the National Academy of Sciences
Volume:
117
Issue:
49
ISSN:
0027-8424
Page Range / eLocation ID:
p. 31002-31009
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
More Like this
  1. Abstract Electrical modulation of magnetic states in single-phase multiferroic materials, using domain-wall magnetoelectric (ME) coupling, can be enhanced substantially by controlling the population density of the ferroelectric (FE) domain walls during polarization switching. In this work, we investigate the domain-wall ME coupling in multiferroic h-YbFeO3thin films, in which the FE domain walls induce clamped antiferromagnetic (AFM) domain walls with reduced magnetization magnitude. Simulation according to the phenomenological theory indicates that the domain-wall ME effect is dramatically enhanced when the separation between the FE domain walls shrinks below the characteristic width of the clamped AFM domain walls during the ferroelectric switching. Experimentally, we show that while the magnetization magnitude remains same for both the positive and the negative saturation polarization states, there is evidence of magnetization reduction at the coercive voltages. These results suggest that the domain-wall ME effect is viable for electrical control of magnetization. 
    more » « less
  2. Abstract Ferroelectric domain walls, topological entities separating domains of uniform polarization, are promising candidates as active elements for nanoscale memories. In such applications, controlled nucleation and stabilization of domain walls are critical. Here, using in situ transmission electron microscopy and phase‐field simulations, a controlled nucleation of vertically oriented 109° domain walls in (110)‐oriented BiFeO3(BFO) thin films is reported. In the switching experiment, reversed domains that are nucleated preferentially at the nanoscale edges of the “crest and sag” pattern‐like electrode under external bias subsequently grow into a stable stripe configuration. In addition, when triangular pockets (with an in‐plane polarization component) are present, these domain walls are pinned to form stable flux‐closure domains. Phase field simulations show that i) field enhancement at the edges of the electrode causes site‐specific domain nucleation, and ii) the local electrostatics at the domain walls drives the formation of flux closure domains, thus stabilizing the striped pattern, irrespective of the initial configuration. The results demonstrate how flux closure pinning can be exploited in conjunction with electrode patterning and substrate orientation to achieve a desired topological defect configuration. These insights constitute critical advancements in exploiting domain walls in next generation ferroelectronic devices. 
    more » « less
  3. The successful implementation of spin-wave devices requires efficient modulation of spin-wave propagation. Using cobalt/nickel multilayer films, we experimentally demonstrate that nanometer-wide magnetic domain walls can be applied to manipulate the phase and magnitude of coherent spin waves in a nonvolatile manner. We further show that a spin wave can, in turn, be used to change the position of magnetic domain walls by means of the spin-transfer torque effect generated from magnon spin current. This mutual interaction between spin waves and magnetic domain walls opens up the possibility of realizing all-magnon spintronic devices, in which one spin-wave signal can be used to control others by reconfiguring magnetic domain structures. 
    more » « less
  4. We report on the results of finite difference time domain (FDTD) simulations of the terahertz response of a split ring resonator (SRR) metamaterial coupled to a hypothetical antiferromagnetic material (AFM) characterized by a magnon resonance. We find a hybridization of the SRR’s local magnetic field and the magnon, which manifests as an avoided crossing in the far-field transmission spectrum. We show that the strong light-matter coupling can be modelled via a two coupled oscillator model. We further evaluate the SRR-AFM coupling strength by varying the physical separation with a dielectric spacer between them. We find strong coupling for spacers thinner than 3μm, suggesting far-field transmission measurements of metamaterial near-fields to be a versatile platform to investigate magnetic excitations of quantum materials. 
    more » « less
  5. We combined synchrotron-based near field infrared spectroscopy and atomic force microscopy to image the properties of ferroelastic domain walls in Sr3Sn2O7. Although frequency shifts at the walls are near the limit of our sensitivity, we can confirm semiconducting rather than metallic character and widths between 20 and 60 nm. The latter is significantly narrower than in other hybrid improper ferroelectrics like Ca3Ti2O7. We attribute this trend to the softer lattice in Sr3Sn2O7, which may enable the octahedral tilt and rotation order parameters to evolve more quickly across the wall without significantly increased strain. These findings are crucial for the understanding of phononic properties at interfaces and the development of domain wall-based devices. 
    more » « less