Electric‐field‐controlled magnetism is of importance in realizing energy efficient, dense and fast information storage and processing. Strain‐mediated converse magneto‐electric (ME) coupling between ferromagnetic and ferroelectric heterostructure shows promise for realizing electric‐controlled magnetism at room temperature and is attracting a number of recent investigations. However, such ME‐effect studies have mainly focus on magnetic metals. In this work, high quality yttrium iron garnet (Y3Fe5O12(YIG)) films are deposited directly onto (100)‐oriented single‐crystal Pb (Mg1/3Nb2/3)0.7Ti0.3O3(PMN‐PT) substrates by means of magnetron sputtering. The electric‐field‐induced polarization switching and lattice strain in the PMN‐PT substrate results in two distinct magnetization states in the YIG film that are nonvolatile and electrically reversible. Because of the direct contact between the YIG and the PMN‐PT substrate, an efficient ME coupling and an almost 90° rotation of the easy axis of the YIG film can be realized. Furthermore, the electric‐field‐controlled hysteresis loop‐like ferromagnetic resonance field shifts and spin pumping signals are observed in Pt/YIG/PMN‐PT heterostructures. Thus, the obstacle is overcome via growing high‐quality YIG thin films directly onto PMN‐PT substrates and an efficient manipulation of magnetism and pure spin current transport by electric field is thereby realized. These findings are instructive for future low‐power magnetic insulator‐based spintronic devices.
Electrical modulation of magnetic states in single-phase multiferroic materials, using domain-wall magnetoelectric (ME) coupling, can be enhanced substantially by controlling the population density of the ferroelectric (FE) domain walls during polarization switching. In this work, we investigate the domain-wall ME coupling in multiferroic h-YbFeO3thin films, in which the FE domain walls induce clamped antiferromagnetic (AFM) domain walls with reduced magnetization magnitude. Simulation according to the phenomenological theory indicates that the domain-wall ME effect is dramatically enhanced when the separation between the FE domain walls shrinks below the characteristic width of the clamped AFM domain walls during the ferroelectric switching. Experimentally, we show that while the magnetization magnitude remains same for both the positive and the negative saturation polarization states, there is evidence of magnetization reduction at the coercive voltages. These results suggest that the domain-wall ME effect is viable for electrical control of magnetization.
more » « less- Award ID(s):
- 1806147
- NSF-PAR ID:
- 10394312
- Publisher / Repository:
- Nature Publishing Group
- Date Published:
- Journal Name:
- Scientific Reports
- Volume:
- 13
- Issue:
- 1
- ISSN:
- 2045-2322
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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