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Title: Inorganic clusters as metalloligands: ligand effects on the synthesis and properties of ternary nanopropeller clusters
Redox-active multimetallic platforms with synthetically addressable and hemilabile active sites are attractive synthetic targets for mimicking the reactivity of enzymatic co-factors toward multielectron transformations. To this end, a family of ternary clusters featuring three edge metal sites anchored on a [Co 6 Se 8 ] multimetallic support via amidophosphine ligands are a promising platform. In this report, we explore how small changes in the stereoelectronic properties of these ligands alter [Co 6 Se 8 ] metalloligand formation, but also substrate binding affinity and strength of the edge/support interaction in two new ternary clusters, M 3 Co 6 Se 8 L 6 (M = Zn, Fe; L (−) = Ph 2 PN (−)i Pr). These clusters are characterized extensively using a range of methods, including single crystal X-ray diffraction, electronic absorption spectroscopy and cyclic voltammetry. Substrate binding studies reveal that Fe 3 Co 6 Se 8 L 6 resists coordination of larger ligands like pyridine or tetrahydrofuran, but binds the smaller ligand CN t Bu. Additionally, investigations into the synthesis of new [Co 6 Se 8 ] metalloligands using two aminophosphines, Ph 2 PN(H) i Pr (L H ) and i Pr 2 PN(H) i Pr, led to the synthesis and more » characterization of Co 6 Se 8 L H 6 , as well as the smaller clusters Co 4 Se 2 (CO) 6 L H 4 , Co 3 Se(μ 2 -PPh 2 )(CO) 4 L H 3 , and [Co(CO) 3 ( i Pr 2 PN(H) i Pr)] 2 . Cumulatively, this study expands our understanding on the effect of the stereoelectronic properties of aminophosphine ligands in the synthesis of cobalt chalcogenide clusters, and, importantly on modulating the push–pull dynamic between the [Co 6 Se 8 ] support, the edge metals and incoming coordinating ligands in ternary M 3 Co 6 Se 8 L 6 clusters. « less
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Dalton Transactions
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16464 to 16473
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National Science Foundation
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Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018).« less
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