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1. Electron cyclotron drift instability and anomalous transport: two-fluid moment theory and modeling

   https://doi.org/10.1088/1361-6595/ac90e7  

   Wang, Liang ; Hakim, Ammar ; Juno, James ; Srinivasan, Bhuvana ( September 2022 , Plasma Sources Science and Technology)

   Abstract In the presence of a strong electric field perpendicular to the magnetic field, the electron cross-field (E × B) flow relative to the unmagnetized ions can cause the so-called electron cyclotron drift instability (ECDI) due to resonances of the ion acoustic mode and the electron cyclotron harmonics. This occurs in, for example, collisionless shock ramps in space, and in E × B discharge devices such as Hall thrusters. A prominent feature of ECDI is its capability to induce an electron flow parallel to the background E field at a speed greatly exceeding predictions by classical collision theory. Such anomalous transport is important due to its role in particle thermalization at space shocks, and in causing plasma flows towards the walls of E × B devices, leading to unfavorable erosion and performance degradation, etc. The development of ECDI and anomalous transport is often considered requiring a fully kinetic treatment. In this work, however, we demonstrate that a reduced variant of this instability, and more importantly, the associated anomalous transport, can be treated self-consistently in a collisionless two-fluid framework without any adjustable collision parameter. By treating both electron and ion species on an equal footing, the free energy due to the inter-species velocity shear allows the growth of an anomalous electron flow parallel to the background E field. We will first present linear analyses of the instability in the two-fluid five- and ten-moment models, and compare them against the fully-kinetic theory. At low temperatures, the two-fluid models predict the fastest-growing mode in good agreement with the kinetic result. Also, by including more ( > = 10 ) moments, secondary (and possibly higher) unstable branches can be recovered. The dependence of the instability on ion-to-electron mass ratio, plasma temperature, and background B field strength is also thoroughly explored. We then carry out direct numerical simulations of the cross-field setup using the five-moment model. The development of the instability, as well as the anomalous transport, is confirmed and in excellent agreement with theoretical predictions. The force balance properties are also studied using the five-moment simulation data. This work casts new insights into the nature of ECDI and the associated anomalous transport and demonstrates the potential of the two-fluid moment model in efficient modeling of E × B plasmas. 

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2. Origin of Intense Electron Heating in Relativistic Blast Waves

   https://doi.org/10.3847/2041-8213/ac634f  

   Vanthieghem, Arno ; Lemoine, Martin ; Gremillet, Laurent ( May 2022 , The Astrophysical Journal Letters)

   Abstract The modeling of gamma-ray burst afterglow emission bears witness to strong electron heating in the precursor of Weibel-mediated, relativistic collisionless shock waves propagating in unmagnetized electron–ion plasmas. In this Letter, we propose a theoretical model, which describes electron heating via a Joule-like process caused by pitch-angle scattering in the decelerating, self-induced microturbulence and the coherent charge-separation field induced by the difference in inertia between electrons and ions. The emergence of this electric field across the precursor of electron–ion shocks is confirmed by large-scale particle-in-cell (PIC) simulations. Integrating the model using a Monte Carlo-Poisson method, we compare the main observables to the PIC simulations to conclude that the above mechanism can indeed account for the bulk of electron heating. 

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3. Polarization and properties of low-frequency waves in warm magnetized two-fluid plasma

   https://doi.org/10.1063/5.0149227  

   Choi, Cheong R. ; Woo, M.-H. ; Ryu, Kwangsun ; Lee, D.-Y. ; Yoon, P. H. ( September 2023 , Physics of Plasmas)

   This paper presents the derivation of a general wave dispersion relation for warm magnetized plasma under the two-fluid formalism. The discussion is quite general except for the assumption of low frequency and slow phase speed, for which the displacement current is negligible, under the implicit assumption that the plasma is sufficiently dense to satisfy the condition ωpe>ωce, where ωpe and ωce denote the plasma oscillation frequency and electron gyro frequency, respectively. The present discussion does not invoke charge neutrality associated with the fluctuations although it is implicitly satisfied. The resulting dispersion relation that includes the fluid thermal effects shows that there are three eigen modes, which include those corresponding to ideal MHD, namely, fast, slow, and kinetic Alfvén waves, as well as higher-frequency modes including the ion and electron cyclotron and lower-hybrid resonances. The fluid effects in the ideal MHD wave branches are influenced by the finite Larmor radius scales, and when the wave number in the cross field direction is comparable to these values, the fluid effects become significant. It is found that the Larmor radius should be interpreted in the sense as ion-acoustic gyro-radius instead of ion thermal gyro radius only. That is, it is found that the electrons also contribute to the non-ideal effect associated with the kinetic Alfvén wave. A comprehensive explanation of the polarization of each mode is also presented. The present findings indicate that the polarity may change its sign only for the kinetic Alfvén mode branch and that such a transition is based on the propagation angle. When such a change does take place, it is found that the kinetic Alfvén wave transits to an ion-acoustic mode. For each branch, it is also found that the electric field along the ambient magnetic field is purely transverse. 

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4. Electrostatic Solitary Waves in the Earth's Bow Shock: Nature, Properties, Lifetimes, and Origin

   https://doi.org/10.1029/2021JA029357  

   Wang, R. ; Vasko, I. Y. ; Mozer, F. S. ; Bale, S. D. ; Kuzichev, I. V. ; Artemyev, A. V. ; Steinvall, K. ; Ergun, R. ; Giles, B. ; Khotyaintsev, Y. ; et al ( July 2021 , Journal of Geophysical Research: Space Physics)

   We present a statistical analysis of >2,100 bipolar electrostatic solitary waves (ESWs) collected from 10 quasi‐perpendicular Earth's bow shock crossings by Magnetospheric Multiscale spacecraft. We developed and implemented a correction procedure for reconstruction of actual electric fields, velocities, and other properties of ESW, whose spatial scales are typically comparable with or smaller than spatial distance between voltage‐sensitive probes. We found that more than 95% of the ESW are of negative polarity with amplitudes typically below a few Volts and 0.1T_e(5–30 V or 0.1–0.3T_efor a few percent of ESW), spatial scales of 10–100 m orλ_D–10λ_D, and velocities from a few tens to a few hundred km/s that is on the order of local ion‐acoustic speed. The spatial scales of ESW are correlated with local Debye lengthλ_D. The ESW have electric fields generally oblique to magnetic field and they propagate highly oblique to shock normalN; more than 80% of ESW propagate within 30° of the shock planeLM. In the shock plane, ESW typically propagates within a few tens of degrees of local magnetic field projectionB_LMand preferentially opposite toN × B_LM. We argue that the ESW of negative polarity are ion holes produced by ion‐ion streaming instabilities. We estimate ion hole lifetimes to be 10–100 ms, or 1–10 km in terms of traveling distance. The revealed statistical properties will be useful for quantitative studies of electron thermalization in the Earth's bow shock.

    

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5. RTD Light Emission around 1550 nm with IQE up to 6% at 300 K

   https://doi.org/10.1109/DRC50226.2020.9135175  

   Brown, E. R. ; Zhang, W-D. ; Fakhimi, P. ; Growden, T. A. ; Berger, P.R. ( June 2020 , IEEE Device Research Conference (DRC), Columbus, OH (June 22-24, 2020))

   Resonant tunneling diodes (RTDs) have come full-circle in the past 10 years after their demonstration in the early 1990s as the fastest room-temperature semiconductor oscillator, displaying experimental results up to 712 GHz and fmax values exceeding 1.0 THz [1]. Now the RTD is once again the preeminent electronic oscillator above 1.0 THz and is being implemented as a coherent source [2] and a self-oscillating mixer [3], amongst other applications. This paper concerns RTD electroluminescence – an effect that has been studied very little in the past 30+ years of RTD development, and not at room temperature. We present experiments and modeling of an n-type In0.53Ga0.47As/AlAs double-barrier RTD operating as a cross-gap light emitter at ~300K. The MBE-growth stack is shown in Fig. 1(a). A 15-μm-diam-mesa device was defined by standard planar processing including a top annular ohmic contact with a 5-μm-diam pinhole in the center to couple out enough of the internal emission for accurate free-space power measurements [4]. The emission spectra have the behavior displayed in Fig. 1(b), parameterized by bias voltage (VB). The long wavelength emission edge is at  = 1684 nm - close to the In0.53Ga0.47As bandgap energy of Ug ≈ 0.75 eV at 300 K. The spectral peaks for VB = 2.8 and 3.0 V both occur around  = 1550 nm (h = 0.75 eV), so blue-shifted relative to the peak of the “ideal”, bulk InGaAs emission spectrum shown in Fig. 1(b) [5]. These results are consistent with the model displayed in Fig. 1(c), whereby the broad emission peak is attributed to the radiative recombination between electrons accumulated on the emitter side, and holes generated on the emitter side by interband tunneling with current density Jinter. The blue-shifted main peak is attributed to the quantum-size effect on the emitter side, which creates a radiative recombination rate RN,2 comparable to the band-edge cross-gap rate RN,1. Further support for this model is provided by the shorter wavelength and weaker emission peak shown in Fig. 1(b) around = 1148 nm. Our quantum mechanical calculations attribute this to radiative recombination RR,3 in the RTD quantum well between the electron ground-state level E1,e, and the hole level E1,h. To further test the model and estimate quantum efficiencies, we conducted optical power measurements using a large-area Ge photodiode located ≈3 mm away from the RTD pinhole, and having spectral response between 800 and 1800 nm with a peak responsivity of ≈0.85 A/W at  =1550 nm. Simultaneous I-V and L-V plots were obtained and are plotted in Fig. 2(a) with positive bias on the top contact (emitter on the bottom). The I-V curve displays a pronounced NDR region having a current peak-to-valley current ratio of 10.7 (typical for In0.53Ga0.47As RTDs). The external quantum efficiency (EQE) was calculated from EQE = e∙IP/(∙IE∙h) where IP is the photodiode dc current and IE the RTD current. The plot of EQE is shown in Fig. 2(b) where we see a very rapid rise with VB, but a maximum value (at VB= 3.0 V) of only ≈2×10-5. To extract the internal quantum efficiency (IQE), we use the expression EQE= c ∙i ∙r ≡ c∙IQE where ci, and r are the optical-coupling, electrical-injection, and radiative recombination efficiencies, respectively [6]. Our separate optical calculations yield c≈3.4×10-4 (limited primarily by the small pinhole) from which we obtain the curve of IQE plotted in Fig. 2(b) (right-hand scale). The maximum value of IQE (again at VB = 3.0 V) is 6.0%. From the implicit definition of IQE in terms of i and r given above, and the fact that the recombination efficiency in In0.53Ga0.47As is likely limited by Auger scattering, this result for IQE suggests that i might be significantly high. To estimate i, we have used the experimental total current of Fig. 2(a), the Kane two-band model of interband tunneling [7] computed in conjunction with a solution to Poisson’s equation across the entire structure, and a rate-equation model of Auger recombination on the emitter side [6] assuming a free-electron density of 2×1018 cm3. We focus on the high-bias regime above VB = 2.5 V of Fig. 2(a) where most of the interband tunneling should occur in the depletion region on the collector side [Jinter,2 in Fig. 1(c)]. And because of the high-quality of the InGaAs/AlAs heterostructure (very few traps or deep levels), most of the holes should reach the emitter side by some combination of drift, diffusion, and tunneling through the valence-band double barriers (Type-I offset) between InGaAs and AlAs. The computed interband current density Jinter is shown in Fig. 3(a) along with the total current density Jtot. At the maximum Jinter (at VB=3.0 V) of 7.4×102 A/cm2, we get i = Jinter/Jtot = 0.18, which is surprisingly high considering there is no p-type doping in the device. When combined with the Auger-limited r of 0.41 and c ≈ 3.4×10-4, we find a model value of IQE = 7.4% in good agreement with experiment. This leads to the model values for EQE plotted in Fig. 2(b) - also in good agreement with experiment. Finally, we address the high Jinter and consider a possible universal nature of the light-emission mechanism. Fig. 3(b) shows the tunneling probability T according to the Kane two-band model in the three materials, In0.53Ga0.47As, GaAs, and GaN, following our observation of a similar electroluminescence mechanism in GaN/AlN RTDs (due to strong polarization field of wurtzite structures) [8]. The expression is Tinter = (2/9)∙exp[(-2 ∙Ug 2 ∙me)/(2h∙P∙E)], where Ug is the bandgap energy, P is the valence-to-conduction-band momentum matrix element, and E is the electric field. Values for the highest calculated internal E fields for the InGaAs and GaN are also shown, indicating that Tinter in those structures approaches values of ~10-5. As shown, a GaAs RTD would require an internal field of ~6×105 V/cm, which is rarely realized in standard GaAs RTDs, perhaps explaining why there have been few if any reports of room-temperature electroluminescence in the GaAs devices. [1] E.R. Brown,et al., Appl. Phys. Lett., vol. 58, 2291, 1991. [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [2] M. Feiginov et al., Appl. Phys. Lett., 99, 233506, 2011. [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [3] Y. Nishida et al., Nature Sci. Reports, 9, 18125, 2019. [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [4] P. Fakhimi, et al., 2019 DRC Conference Digest. [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). [5] S. Sze, Physics of Semiconductor Devices, 2nd Ed. 12.2.1 (Wiley, 1981). [6] L. Coldren, Diode Lasers and Photonic Integrated Circuits, (Wiley, 1995). [7] E.O. Kane, J. of Appl. Phy 32, 83 (1961). [8] T. Growden, et al., Nature Light: Science & Applications 7, 17150 (2018). 

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