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Title: Experimental investigation of buffer traps physical mechanisms on the gate charge of GaN-on-Si devices under various substrate biases
Award ID(s):
1939050
NSF-PAR ID:
10220950
Author(s) / Creator(s):
;
Date Published:
Journal Name:
Applied Physics Letters
Volume:
116
Issue:
8
ISSN:
0003-6951
Page Range / eLocation ID:
083501
Format(s):
Medium: X
Sponsoring Org:
National Science Foundation
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