Experimental investigation of buffer traps physical mechanisms on the gate charge of GaN-on-Si devices under various substrate biases
- Award ID(s):
- 1939050
- NSF-PAR ID:
- 10220950
- Date Published:
- Journal Name:
- Applied Physics Letters
- Volume:
- 116
- Issue:
- 8
- ISSN:
- 0003-6951
- Page Range / eLocation ID:
- 083501
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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