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Controlling nanoporosity to favorably alter multiple properties in layered crystalline inorganic thin films is a challenge. Here, we demonstrate that the thermoelectric and mechanical properties of Ca 3 Co 4 O 9 films can be engineered through nanoporosity control by annealing multiple Ca(OH) 2 /Co 3 O 4 reactant bilayers with characteristic bilayer thicknesses (b t ). Our results show that doubling b t , e.g. , from 12 to 26 nm, more than triples the average pore size from ∼120 nm to ∼400 nm and increases the pore fraction from 3% to 17.1%. The higher porosity film exhibits not only a 50% higher electrical conductivity of σ ∼ 90 S cm −1 and a high Seebeck coefficient of α ∼ 135 μV K −1 , but also a thermal conductivity as low as κ ∼ 0.87 W m −1 K −1 . The nanoporous Ca 3 Co 4 O 9 films exhibit greater mechanical compliance and resilience to bending than the bulk. These results indicate that annealing reactant multilayers with controlled thicknesses is an attractive way to engineer nanoporosity and realize mechanically flexible oxide-based thermoelectric materials.
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Enhanced thermoelectric performance of F4-TCNQ doped FASnI 3 thin films
In the past decade, great efforts have been devoted to the development of organic–inorganic hybrid perovskites for achieving efficient photovoltaics, but less attention has been paid to their thermoelectric applications. In this study, for the first time, we report the thermoelectric performance of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) doped NH 2 CHNH 2 SnI 3 (FASnI 3 ) thin films. It is found that the electrical conductivities of the F4-TCNQ doped FASnI 3 thin films increase and then decrease along with increased doping levels of F4-TCNQ. Systematic studies indicate that enhanced electrical conductivities are attributed to the increased charge carrier concentrations and mobilities and superior film morphologies of the F4-TCNQ doped FASnI 3 thin films, and decreased electrical conductivities originate from the cracks and poor film morphology of the F4-TCNQ doped FASnI 3 thin films induced by excess F4-TCNQ dopants. The quantitative thermal conductivity scanning thermal microscopy studies reveal that the F4-TCNQ doped FASnI 3 thin films exhibit ultralow thermal conductivities. Moreover, the thermoelectric performance of the F4-TCNQ doped FASnI 3 thin films is investigated. It is found that the F4-TCNQ doped FASnI 3 thin films exhibit a Seebeck coefficient of ∼310 μV K −1 , a power factor of ∼130 μW m −1 K −2 and a ZT value of ∼0.19 at room temperature. All these results demonstrate that our studies open a door for exploring cost-effective less-toxic organic–inorganic hybrid perovskites in heat-to-electricity conversion applications at room temperature.
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- Award ID(s):
- 1903303
- PAR ID:
- 10225824
- Date Published:
- Journal Name:
- Journal of Materials Chemistry A
- Volume:
- 8
- Issue:
- 47
- ISSN:
- 2050-7488
- Page Range / eLocation ID:
- 25431 to 25442
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
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- Free Publicly Accessible Full Text
-
Accepted Manuscript
- Journal Article:
- https://doi.org/10.1039/D0TA09329G
