δ-Bi 2 O 3 has long been touted as a potential material for use in solid oxide fuel cells (SOFC) due to its intrinsically high ionic conductivity. However, its limited operational temperature has led to stabilising the phase from >725 °C to room temperature either by doping, albeit with a compromise in conductivity, or by growing the phase confined within superlattice thin films. Superlattice architectures are challenging to implement in functional μSOFC devices owing to their ionic conducting channels being in the plane of the film. Vertically aligned nanocomposites (VANs) have the potential to overcome these limitations, as their nanocolumnar structures are perpendicular to the plane of the film, hence connecting the electrodes at top and bottom. Here, we demonstrate for the first time the growth of epitaxially stabilised δ-Bi 2 O 3 in VAN films, stabilised independently of substrate strain. The phase is doped with Dy and is formed in a VAN film which incorporates DyMnO 3 as a vertically epitaxially stabilising matrix phase. Our VAN films exhibit very high ionic conductivity, reaching 10 −3 S cm −1 at 500 °C. This work opens up the possibility to incorporate thin film δ-Bi 2 O 3 based VANs into functional μSOFC devices, either as cathodes (by pairing δ-Bi 2 O 3 with a catalytically active electronic conductor) and/or electrolytes (by incorporating δ-Bi 2 O 3 with an insulator). 
                        more » 
                        « less   
                    
                            
                            Spontaneous Ordering of Oxide-Oxide Epitaxial Vertically Aligned Nanocomposite Thin Films
                        
                    
    
            The emerging field of self-assembled vertically aligned nanocomposite (VAN) thin films effectively enables strain, interface, and microstructure engineering as well as (multi)functional improvements in electric, magnetic, optical, and energy-related properties. Well-ordered or patterned microstructures not only empower VAN thin films with many new functionalities but also enable VAN thin films to be used in nanoscale devices. Comparative ordered devices formed via templating methods suffer from critical drawbacks of processing complexity and potential contamination. Therefore, VAN thin films with spontaneous ordering stand out and display many appealing features for next-generation technological devices, such as electronics, optoelectronics, ultrahigh-density memory systems, photonics, and 3D microbatteries. The spontaneous ordering described in this review contains ordered/patterned structures in both in-plane and out-of-plane directions. In particular, approaches to obtaining spontaneously ordered/patterned structures in-plane are systematically reviewedfrom both thermodynamic and kinetic perspectives. Out-of-plane ordering is also discussed in detail. In addition to reviewing the progress of VAN films with spontaneous ordering, this article also highlights some recent developments in spontaneous ordering approaches and proposes future directions. 
        more » 
        « less   
        
    
    
                            - PAR ID:
- 10227049
- Date Published:
- Journal Name:
- Annual Review of Materials Research
- Volume:
- 50
- Issue:
- 1
- ISSN:
- 1531-7331
- Page Range / eLocation ID:
- 229 to 253
- Format(s):
- Medium: X
- Sponsoring Org:
- National Science Foundation
More Like this
- 
            
- 
            II–IV–V 2 materials, ternary analogs to III–V materials, are emerging for their potential applications in devices such as LEDs and solar cells. Controlling cation ordering in II–IV–V 2 materials offers the potential to tune properties at nearly fixed compositions and lattice parameters. While tuning properties at a fixed lattice constant through ordering has the potential to be a powerful tool used in device fabrication, cation ordering also creates challenges with characterization and quantification of ordering. In this work, we investigate two different methods to quantify cation ordering in ZnGeP 2 thin films: a stretching parameter calculated from lattice constants , and an order parameter determined from the cation site occupancies ( S ). We use high resolution X-ray diffraction (HRXRD) to determine and resonant energy X-ray diffraction (REXD) to extract S . REXD is critical to distinguish between elements with similar Z -number ( e.g. Zn and Ge). We found that samples with a corresponding to the ordered chalcopyrite structure had only partially ordered S values. The optical absorption onset for these films occurred at lower energy than expected for fully ordered ZnGeP 2 , indicating that S is a more accurate descriptor of cation order than the stretching parameter. Since disorder is complex and can occur on many length scales, metrics for quantifying disorder should be chosen that most accurately reflect the physical properties of interest.more » « less
- 
            Abstract Silica aerogels have emerged as promising candidates as platforms for a variety of devices, including those used for magnetic logic and sensing. However, their non-planar structure also poses challenges for their use as substrates for thin film devices. For example, substrate disorder is established to strongly influence anisotropy in thin film magnetic materials. Here, we evaluate the substrate effect on induced uniaxial anisotropy in permalloy (Py) thin films and patterned structures, wherein the uniaxial anisotropy is clearly linked to a directionality of the magnetization hysteresis and modifications to zero field domain structures relative to a standard thermally oxidized Si substrate. The strength and direction of this anisotropy vary with location, indicating its non-uniform nature, and is estimated to be as large as 700 J/m3for 25 nm thick permalloy films, and decreases with increasing Py thickness. This substrate induced anisotropy is strong enough to modify the domain structures present in patterned magnetic elements and can have significant implications for the development of magnetic devices on aerogel substrates. Results are compared and found to be consistent with micromagnetic modelling of expected domain structures.more » « less
- 
            Kagome lattices have garnered substantial interest because their band structure consists of topological flat bands and Dirac cones. The RMn6Sn6 (R = rare earth) compounds are particularly interesting because of the existence of the large intrinsic anomalous Hall effect (AHE), which originates from the gapped Dirac cones near the Fermi level. This makes RMn6Sn6 an outstanding candidate for realizing the high-temperature quantum AHE. The growth of RMn6Sn6 thin films is beneficial for both fundamental research and potential applications. However, most of the studies on RMn6Sn6 have focused on bulk crystals, and the synthesis of RMn6Sn6 thin films has not been reported so far. Here, we report the atomic layer molecular beam epitaxy growth, structural and magnetic characterizations, and transport properties of ErMn6Sn6 and TbMn6Sn6 thin films. It is especially noteworthy that TbMn6Sn6 thin films have out-of-plane magnetic anisotropy, which is important for realizing the quantum AHE. Our work paves the avenue toward the control of the AHE using devices patterned from RMn6Sn6 thin films.more » « less
- 
            Abstract The control of the in-plane domain evolution in ferroelectric thin films is not only critical to understanding ferroelectric phenomena but also to enabling functional device fabrication. However, in-plane polarized ferroelectric thin films typically exhibit complicated multi-domain states, not desirable for optoelectronic device performance. Here we report a strategy combining interfacial symmetry engineering and anisotropic strain to design single-domain, in-plane polarized ferroelectric BaTiO 3 thin films. Theoretical calculations predict the key role of the BaTiO 3 /PrScO 3 $${({{{{{\boldsymbol{110}}}}}})}_{{{{{{\bf{O}}}}}}}$$ ( 110 ) O substrate interfacial environment, where anisotropic strain, monoclinic distortions, and interfacial electrostatic potential stabilize a single-variant spontaneous polarization. A combination of scanning transmission electron microscopy, piezoresponse force microscopy, ferroelectric hysteresis loop measurements, and second harmonic generation measurements directly reveals the stabilization of the in-plane quasi-single-domain polarization state. This work offers design principles for engineering in-plane domains of ferroelectric oxide thin films, which is a prerequisite for high performance optoelectronic devices.more » « less
 An official website of the United States government
An official website of the United States government 
				
			 
					 
					
 
                                    